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<item rdf:about="http://link.aps.org/abstract/PRB/v77/e153307">
<title>Generation and measurement of nonequilibrium spin currents in two-terminal systems</title>
<link>http://link.aps.org/abstract/PRB/v77/e153307</link>
<description>Author(s): T. P. Pareek and A. M. Jayannavar&lt;br/&gt;Generation and measurement of nonequilibrium spin current in two probe phase coherent conductors are discussed. It is argued and shown that spin current can be generated in a two-terminal nonmagnetic system by application of electrical voltage. These spin currents can be measured via conductance in...&lt;br/&gt;[Phys. Rev. B 77, 153307] Published Mon Apr 28, 2008</description>
<dc:source>Phys. Rev. B 77, 153307</dc:source>
<dc:creator>T. P. Pareek</dc:creator>
<dc:creator>A. M. Jayannavar</dc:creator>
<dc:date>2008-04-28T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.153307</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-28T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>153307</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-02-13T00:00:00-05:00</prism:receptionDate>
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<item rdf:about="http://link.aps.org/abstract/PRB/v77/e153411">
<title>Suppression of spin polarization in graphene nanoribbons by edge defects and impurities</title>
<link>http://link.aps.org/abstract/PRB/v77/e153411</link>
<description>Author(s): B. Huang, F. Liu, J. Wu, B.-L. Gu, and W. Duan&lt;br/&gt;We investigate the effect of edge defects (vacancies) and impurities (substitutional dopants) on the robustness of spin polarization in graphene nanoribbons (GNRs) with zigzag edges by using density-functional-theory calculations. The stability of the spin state and its magnetic moments is found to...&lt;br/&gt;[Phys. Rev. B 77, 153411] Published Fri Apr 25, 2008</description>
<dc:source>Phys. Rev. B 77, 153411</dc:source>
<dc:creator>Bing Huang</dc:creator>
<dc:creator>Feng Liu</dc:creator>
<dc:creator>Jian Wu</dc:creator>
<dc:creator>Bing-Lin Gu</dc:creator>
<dc:creator>Wenhui Duan</dc:creator>
<dc:date>2008-04-25T00:00:00-05:00</dc:date>
<dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.153411</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
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<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>153411</prism:startingPage>
<prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-03-31T00:00:00-05:00</prism:receptionDate>
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<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155212">
<title>Exciton-spin dephasing and relaxation due to symmetry breaking in two-band bulk semiconductors</title>
<link>http://link.aps.org/abstract/PRB/v77/e155212</link>
<description>Author(s): M. Gallart, S. Cronenberger, C. Brimont, B. Hönerlage, and P. Gilliot&lt;br/&gt;The full point group symmetry of a crystal can be broken due to internal or external effective fields. In the study of excitons, such symmetry breaking can lead to a coupling of different exciton states and if a system is prepared in an exciton state with a defined total angular momentum (pseudospi...&lt;br/&gt;[Phys. Rev. B 77, 155212] Published Fri Apr 25, 2008</description>
<dc:source>Phys. Rev. B 77, 155212</dc:source>
<dc:creator>M. Gallart</dc:creator>
<dc:creator>S. Cronenberger</dc:creator>
<dc:creator>C. Brimont</dc:creator>
<dc:creator>B. Hönerlage</dc:creator>
<dc:creator>P. Gilliot</dc:creator>
<dc:date>2008-04-25T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155212</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-25T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155212</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-02-07T00:00:00-05:00</prism:receptionDate>
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<item rdf:about="http://link.aps.org/abstract/PRL/v100/e166805">
<title>Disorder Scattering in Magnetic Tunnel Junctions: Theory of Nonequilibrium Vertex Correction</title>
<link>http://link.aps.org/abstract/PRL/v100/e166805</link>
<description>Author(s): Y. Ke, K. Xia, and H. Guo&lt;br/&gt;We report a first principles formalism and its numerical implementation for treating quantum transport properties of nanoelectronic devices with atomistic disorder. We develop a nonequilibrium vertex correction (NVC) theory to handle the configurational average of random disorder at the density mat...&lt;br/&gt;[Phys. Rev. Lett. 100, 166805] Published Fri Apr 25, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 166805</dc:source>
<dc:creator>Youqi Ke</dc:creator>
<dc:creator>Ke Xia</dc:creator>
<dc:creator>Hong Guo</dc:creator>
<dc:date>2008-04-25T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.166805</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-25T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>166805</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-16T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e144423">
<title>Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve</title>
<link>http://link.aps.org/abstract/PRB/v77/e144423</link>
<description>Author(s): P. M. Braganca et al.&lt;br/&gt;We examine the effect that a spatially nonuniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin-torque efficiency acting upon the reversing nanomagnet can be enhanced t...&lt;br/&gt;[Phys. Rev. B 77, 144423] Published Wed Apr 23, 2008</description>
<dc:source>Phys. Rev. B 77, 144423</dc:source>
<dc:creator>P. M. Braganca</dc:creator>
<dc:creator>O. Ozatay</dc:creator>
<dc:creator>A. G. F. Garcia</dc:creator>
<dc:creator>O. J. Lee</dc:creator>
<dc:creator>D. C. Ralph</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-23T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.144423</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>14</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-23T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>144423</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-09T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165331">
<title>Spin dephasing in drift-dominated semiconductor spintronics devices</title>
<link>http://link.aps.org/abstract/PRB/v77/e165331</link>
<description>Author(s): B. Huang and I. Appelbaum&lt;br/&gt;A spin-transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the ohmic regime, dephasing is independent of transit length a...&lt;br/&gt;[Phys. Rev. B 77, 165331] Published Tue Apr 22, 2008</description>
<dc:source>Phys. Rev. B 77, 165331</dc:source>
<dc:creator>Biqin Huang</dc:creator>
<dc:creator>Ian Appelbaum</dc:creator>
<dc:date>2008-04-22T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165331</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-22T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165331</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-01-11T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e167201">
<title>Line Shape Distortion in a Nonlinear Auto-Oscillator Near Generation Threshold: Application to Spin-Torque Nano-Oscillators</title>
<link>http://link.aps.org/abstract/PRL/v100/e167201</link>
<description>Author(s): J.-V. Kim, Q. Mistral, C. Chappert, V. S. Tiberkevich, and A. N. Slavin&lt;br/&gt;The power spectrum of an auto-oscillator with a large frequency nonlinearity in a noisy environment is calculated. The power spectrum becomes strongly non-Lorentzian, broadened, and asymmetric near the generation threshold. A Lorentzian spectrum is recovered far below and far above the threshold, w...&lt;br/&gt;[Phys. Rev. Lett. 100, 167201] Published Tue Apr 22, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 167201</dc:source>
<dc:creator>Joo-Von Kim</dc:creator>
<dc:creator>Q. Mistral</dc:creator>
<dc:creator>C. Chappert</dc:creator>
<dc:creator>V. S. Tiberkevich</dc:creator>
<dc:creator>A. N. Slavin</dc:creator>
<dc:date>2008-04-22T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.167201</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-22T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>167201</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-09-29T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e144417">
<title>Resonant domain wall depinning induced by oscillating spin-polarized currents in thin ferromagnetic strips</title>
<link>http://link.aps.org/abstract/PRB/v77/e144417</link>
<description>Author(s): E. Martinez, L. Lopez-Diaz, O. Alejos, and L. Torres&lt;br/&gt;The interaction between ac spin-polarized electrical currents and a domain wall initially trapped on a notch in a thin Permalloy nanostrip is investigated by micromagnetic modeling as well as a one-dimensional model that considers the wall as a rigid object. A systematic study of the depinning tran...&lt;br/&gt;[Phys. Rev. B 77, 144417] Published Fri Apr 18, 2008</description>
<dc:source>Phys. Rev. B 77, 144417</dc:source>
<dc:creator>E. Martinez</dc:creator>
<dc:creator>L. Lopez-Diaz</dc:creator>
<dc:creator>O. Alejos</dc:creator>
<dc:creator>L. Torres</dc:creator>
<dc:date>2008-04-18T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.144417</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>14</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-18T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>144417</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-07-31T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155320">
<title>Multichannel architecture for electronic quantum Hall interferometry</title>
<link>http://link.aps.org/abstract/PRB/v77/e155320</link>
<description>Author(s): V. Giovannetti, F. Taddei, D. Frustaglia, and R. Fazio&lt;br/&gt;We propose an architecture for implementing electronic interferometry in quantum Hall bars. It exploits scattering among parallel edge channels. In contrast to previous developments, this one employs a simply connected mesa admitting serial concatenation of building elements closer to optical analo...&lt;br/&gt;[Phys. Rev. B 77, 155320] Published Fri Apr 18, 2008</description>
<dc:source>Phys. Rev. B 77, 155320</dc:source>
<dc:creator>Vittorio Giovannetti</dc:creator>
<dc:creator>Fabio Taddei</dc:creator>
<dc:creator>Diego Frustaglia</dc:creator>
<dc:creator>Rosario Fazio</dc:creator>
<dc:date>2008-04-18T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155320</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-18T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155320</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-01-30T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e156404">
<title>Proposal for a New Class of Materials: Spin Gapless Semiconductors</title>
<link>http://link.aps.org/abstract/PRL/v100/e156404</link>
<description>Author(s): X. L. Wang&lt;br/&gt;The concept of the spin gapless semiconductor in which both electron and hole can be fully spin polarized is proposed, and its possibility is presented on the basis of first-principles electronic structure calculations. Possible new physics and potential applications in spintronic devices based on ...&lt;br/&gt;[Phys. Rev. Lett. 100, 156404] Published Fri Apr 18, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 156404</dc:source>
<dc:creator>X. L. Wang</dc:creator>
<dc:date>2008-04-18T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.156404</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-18T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>156404</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-05-15T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e134432">
<title>Effects of current on nanoscale ring-shaped magnetic tunnel junctions</title>
<link>http://link.aps.org/abstract/PRB/v77/e134432</link>
<description>Author(s): H.-X. Wei et al.&lt;br/&gt;We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of 6×10^{6}A∕cm^{2}, the magnetization of the two magnetic rings can be switched...&lt;br/&gt;[Phys. Rev. B 77, 134432] Published Thu Apr 17, 2008</description>
<dc:source>Phys. Rev. B 77, 134432</dc:source>
<dc:creator>Hong-Xiang Wei</dc:creator>
<dc:creator>Jiexuan He</dc:creator>
<dc:creator>Zhen-Chao Wen</dc:creator>
<dc:creator>Xiu-Feng Han</dc:creator>
<dc:creator>Wen-Shan Zhan</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-17T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.134432</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-17T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>134432</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-03-06T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e134433">
<title>Linear response theoretical study of the exchange interactions in Mn-doped ScN: Effects of disorder, band gap, and doping</title>
<link>http://link.aps.org/abstract/PRB/v77/e134433</link>
<description>Author(s): A. Herwadkar, W. R. L. Lambrecht, and M. van Schilfgaarde&lt;br/&gt;Linear response calculations of the magnetic exchange interactions in Mn-doped ScN were carried out in the rigid-spin approximation by using the muffin-tin-orbital Green’s function method. They show that the exchange interactions are long range and strongly affected by disorder, band gap correction...&lt;br/&gt;[Phys. Rev. B 77, 134433] Published Thu Apr 17, 2008</description>
<dc:source>Phys. Rev. B 77, 134433</dc:source>
<dc:creator>Aditi Herwadkar</dc:creator>
<dc:creator>Walter R. L. Lambrecht</dc:creator>
<dc:creator>Mark van Schilfgaarde</dc:creator>
<dc:date>2008-04-17T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.134433</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-17T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>134433</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-17T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e156601">
<title>Electrically Tunable Spin Polarization in a Carbon Nanotube Spin Diode</title>
<link>http://link.aps.org/abstract/PRL/v100/e156601</link>
<description>Author(s): C. A. Merchant and N. Marković&lt;br/&gt;We have studied the current through a carbon-nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available nondegenerate energy level on the dot, we observe a pronounced decrease in the current fo...&lt;br/&gt;[Phys. Rev. Lett. 100, 156601] Published Thu Apr 17, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 156601</dc:source>
<dc:creator>Christopher A. Merchant</dc:creator>
<dc:creator>Nina Marković</dc:creator>
<dc:date>2008-04-17T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.156601</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-17T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>156601</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-07-13T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e132406">
<title>Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin valve with an insulating antiferromagnetic layer</title>
<link>http://link.aps.org/abstract/PRB/v77/e132406</link>
<description>Author(s): N. V. Dai et al.&lt;br/&gt;The impact of in-plane alternating currents on the exchange bias, resistance, and magnetoresistance of a Co_{85}Fe_{15}∕Ni_{0.85}Co_{0.15}O∕Co_{85}Fe_{15}∕Cu∕Co_{85}Fe_{15} spin valve is studied. With increasing current, the resistance is increased while the maximum magnetoresistance ratio decrease...&lt;br/&gt;[Phys. Rev. B 77, 132406] Published Wed Apr 16, 2008</description>
<dc:source>Phys. Rev. B 77, 132406</dc:source>
<dc:creator>N. V. Dai</dc:creator>
<dc:creator>N. C. Thuan</dc:creator>
<dc:creator>L. V. Hong</dc:creator>
<dc:creator>N. X. Phuc</dc:creator>
<dc:creator>Y. P. Lee</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-16T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.132406</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-16T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>132406</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-01-07T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e156402">
<title>Spin-Orbit-Mediated Anisotropic Spin Interaction in Interacting Electron Systems</title>
<link>http://link.aps.org/abstract/PRL/v100/e156402</link>
<description>Author(s): S. Gangadharaiah, J. Sun, and O. A. Starykh&lt;br/&gt;We investigate interactions between spins of strongly correlated electrons subject to the spin-orbit interaction. Our main finding is that of a novel, spin-orbit mediated anisotropic spin-spin coupling of the van der Waals type. Unlike the standard exchange, this interaction does not require the wa...&lt;br/&gt;[Phys. Rev. Lett. 100, 156402] Published Tue Apr 15, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 156402</dc:source>
<dc:creator>Suhas Gangadharaiah</dc:creator>
<dc:creator>Jianmin Sun</dc:creator>
<dc:creator>Oleg A. Starykh</dc:creator>
<dc:date>2008-04-15T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.156402</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-15T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>156402</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-20T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e132405">
<title>Transport spin current driven by the moving kink crystal in a chiral helimagnet</title>
<link>http://link.aps.org/abstract/PRB/v77/e132405</link>
<description>Author(s): I. G. Bostrem, J.-i. Kishine, and A. S. Ovchinnikov&lt;br/&gt;We show that the bulk transport magnetic current is generated by the moving magnetic kink crystal (chiral soliton lattice) formed in the chiral helimagnet under the static magnetic field applied perpendicular to the helical axis. The current is caused by the nonequilibrium transport momentum with t...&lt;br/&gt;[Phys. Rev. B 77, 132405] Published Fri Apr 11, 2008</description>
<dc:source>Phys. Rev. B 77, 132405</dc:source>
<dc:creator>I. G. Bostrem</dc:creator>
<dc:creator>Jun-ichiro Kishine</dc:creator>
<dc:creator>A. S. Ovchinnikov</dc:creator>
<dc:date>2008-04-11T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.132405</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-11T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>132405</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-01-17T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165117">
<title>Intrinsic spin Hall effect and orbital Hall effect in 4d and 5d transition metals</title>
<link>http://link.aps.org/abstract/PRB/v77/e165117</link>
<description>Author(s): T. Tanaka et al.&lt;br/&gt;We study the intrinsic spin Hall conductivity (SHC) in various 5d transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and 4d transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model, which enables us to perform quantitatively reliable analysis. In ...&lt;br/&gt;[Phys. Rev. B 77, 165117] Published Fri Apr 11, 2008</description>
<dc:source>Phys. Rev. B 77, 165117</dc:source>
<dc:creator>T. Tanaka</dc:creator>
<dc:creator>H. Kontani</dc:creator>
<dc:creator>M. Naito</dc:creator>
<dc:creator>T. Naito</dc:creator>
<dc:creator>D. S. Hirashima</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-11T00:00:00-05:00</dc:date>
<dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165117</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-11T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165117</prism:startingPage>
<prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-08T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165412">
<title>Anisotropic magnetoresistance in nanocontacts</title>
<link>http://link.aps.org/abstract/PRB/v77/e165412</link>
<description>Author(s): D. Jacob, J. Fernández-Rossier, and J. J. Palacios&lt;br/&gt;We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, such as chemically pure break j...&lt;br/&gt;[Phys. Rev. B 77, 165412] Published Thu Apr 10, 2008</description>
<dc:source>Phys. Rev. B 77, 165412</dc:source>
<dc:creator>D. Jacob</dc:creator>
<dc:creator>J. Fernández-Rossier</dc:creator>
<dc:creator>J. J. Palacios</dc:creator>
<dc:date>2008-04-10T00:00:00-05:00</dc:date>
<dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165412</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-10T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165412</prism:startingPage>
<prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-08-09T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e144409">
<title>Evidence of intrinsic exchange bias and its origin in spin-glass-like disordered L_{0.5}Sr_{0.5}MnO_{3} manganites (L=Y, Y_{0.5}Sm_{0.5}, and Y_{0.5}La_{0.5})</title>
<link>http://link.aps.org/abstract/PRB/v77/e144409</link>
<description>Author(s): S. Karmakar et al.&lt;br/&gt;Exchange-bias (EB) phenomena have been observed in the L_{0.5}Sr_{0.5}MnO_{3} (L=Y, Y_{0.5}Sm_{0.5}, and Y_{0.5}La_{0.5})-type manganites showing cluster-glass-like and spin-glass-like behavior. The field cooled magnetic hysteresis loops exhibit shifts both in the field and magnetization axes. The ...&lt;br/&gt;[Phys. Rev. B 77, 144409] Published Mon Apr 07, 2008</description>
<dc:source>Phys. Rev. B 77, 144409</dc:source>
<dc:creator>Shilpi Karmakar</dc:creator>
<dc:creator>S. Taran</dc:creator>
<dc:creator>Esa Bose</dc:creator>
<dc:creator>B. K. Chaudhuri</dc:creator>
<dc:creator>C. P. Sun</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-07T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.144409</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>14</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-07T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>144409</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-07-16T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165312">
<title>Coherent spin rotations in open driven double quantum dots</title>
<link>http://link.aps.org/abstract/PRB/v77/e165312</link>
<description>Author(s): R. Sánchez, C. López-Monís, and G. Platero&lt;br/&gt;We analyze coherent spin rotations in a dc biased double quantum dot driven by crossed dc and ac magnetic fields. In this configuration, spatial delocalization due to interdot tunneling competes with intradot spin rotations induced by the time dependent magnetic field, giving rise to a complicated ...&lt;br/&gt;[Phys. Rev. B 77, 165312] Published Mon Apr 07, 2008</description>
<dc:source>Phys. Rev. B 77, 165312</dc:source>
<dc:creator>Rafael Sánchez</dc:creator>
<dc:creator>Carlos López-Monís</dc:creator>
<dc:creator>Gloria Platero</dc:creator>
<dc:date>2008-04-07T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165312</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-07T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165312</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-02-15T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e144408">
<title>Role of magnetic impurities in Fe/V multilayers</title>
<link>http://link.aps.org/abstract/PRB/v77/e144408</link>
<description>Author(s): B. Skubic, E. Holmström, A. Bergman, and O. Eriksson&lt;br/&gt;We have studied the Fe/V bcc (100) multilayers and the effect of alloying the V spacer layers with various amounts of magnetic impurities (Fe, Co, Ni, and Cr). The study was performed by means of total energy electronic structure calculations. We compare the effect of the different types of impurit...&lt;br/&gt;[Phys. Rev. B 77, 144408] Published Fri Apr 04, 2008</description>
<dc:source>Phys. Rev. B 77, 144408</dc:source>
<dc:creator>B. Skubic</dc:creator>
<dc:creator>E. Holmström</dc:creator>
<dc:creator>A. Bergman</dc:creator>
<dc:creator>O. Eriksson</dc:creator>
<dc:date>2008-04-04T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.144408</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>14</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-04T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>144408</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-08-21T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155305">
<title>Spin-conserving scattering of holes by magnetic ions in semimagnetic quantum wells</title>
<link>http://link.aps.org/abstract/PRB/v77/e155305</link>
<description>Author(s): E. Tsitsishvili and H. Kalt&lt;br/&gt;We have calculated the characteristic time for the direct heating of the Mn spin system by spin-polarized photoexcited holes as well as the relaxation time for a single hole in semimagnetic quantum wells in an external longitudinal magnetic field. This spin-conserving heating process is due to the ...&lt;br/&gt;[Phys. Rev. B 77, 155305] Published Fri Apr 04, 2008</description>
<dc:source>Phys. Rev. B 77, 155305</dc:source>
<dc:creator>Elena Tsitsishvili</dc:creator>
<dc:creator>Heinz Kalt</dc:creator>
<dc:date>2008-04-04T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155305</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-04T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155305</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-13T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155407">
<title>Cobalt-doped β-peptide nanotubes: A class of spintronic materials</title>
<link>http://link.aps.org/abstract/PRB/v77/e155407</link>
<description>Author(s): B. Sanyal, O. Eriksson, and P. I. Arvidsson&lt;br/&gt;We report a density functional theory based ab initio investigation of protein nanotubes formed by a stacking of β-peptide rings. We have optimized the structure of β-peptide rings arranged in a nanotube geometry. The calculated interatomic bond distances are found to agree with observations as is ...&lt;br/&gt;[Phys. Rev. B 77, 155407] Published Fri Apr 04, 2008</description>
<dc:source>Phys. Rev. B 77, 155407</dc:source>
<dc:creator>Biplab Sanyal</dc:creator>
<dc:creator>Olle Eriksson</dc:creator>
<dc:creator>Per I. Arvidsson</dc:creator>
<dc:date>2008-04-04T00:00:00-05:00</dc:date>
<dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155407</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-04T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155407</prism:startingPage>
<prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-12T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155304">
<title>Understanding spin transport from motion in SU(2)×U(1) fields</title>
<link>http://link.aps.org/abstract/PRB/v77/e155304</link>
<description>Author(s): P.-Q. Jin and Y.-Q. Li&lt;br/&gt;Starting from a continuum constituted by charged tops, we formulate the classical counterpart of a previously obtained covariant continuitylike equation for the spin current. Such a formulism provides an intuitive picture to elucidate the nonconservation of the spin current and to interpret the con...&lt;br/&gt;[Phys. Rev. B 77, 155304] Published Thu Apr 03, 2008</description>
<dc:source>Phys. Rev. B 77, 155304</dc:source>
<dc:creator>Pei-Qing Jin</dc:creator>
<dc:creator>You-Quan Li</dc:creator>
<dc:date>2008-04-03T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155304</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-03T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155304</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-01-16T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165305">
<title>Ballistic spin rotator based on a Π nanojunction with spin-orbit interaction</title>
<link>http://link.aps.org/abstract/PRB/v77/e165305</link>
<description>Author(s): S. Bellucci and P. Onorato&lt;br/&gt;In a quantum nanojunction with a Π geometry and two external leads, the spin properties of an incoming electron are modified by the spin-orbit interaction, resulting in a transformation of the spin polarization of the injected current. The Π nanojunction acts as a ballistic spin rotator whose prope...&lt;br/&gt;[Phys. Rev. B 77, 165305] Published Thu Apr 03, 2008</description>
<dc:source>Phys. Rev. B 77, 165305</dc:source>
<dc:creator>S. Bellucci</dc:creator>
<dc:creator>P. Onorato</dc:creator>
<dc:date>2008-04-03T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165305</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-03T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165305</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-07T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165306">
<title>Spin polarization in modulation-doped GaAs quantum wires</title>
<link>http://link.aps.org/abstract/PRB/v77/e165306</link>
<description>Author(s): M. Evaldsson, S. Ihnatsenka, and I. V. Zozoulenko&lt;br/&gt;We study spin polarization in a split-gate quantum wire focusing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin density approximation. We find that depending on the electro...&lt;br/&gt;[Phys. Rev. B 77, 165306] Published Thu Apr 03, 2008</description>
<dc:source>Phys. Rev. B 77, 165306</dc:source>
<dc:creator>M. Evaldsson</dc:creator>
<dc:creator>S. Ihnatsenka</dc:creator>
<dc:creator>I. V. Zozoulenko</dc:creator>
<dc:date>2008-04-03T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165306</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-03T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165306</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-17T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e136601">
<title>Spin Injection and Relaxation in a Mesoscopic Superconductor</title>
<link>http://link.aps.org/abstract/PRL/v100/e136601</link>
<description>Author(s): N. Poli et al.&lt;br/&gt;We study spin transport in a superconducting nanowire using a set of closely spaced magnetic tunnel contacts. We observe a giant enhancement of the spin accumulation of up to 5 orders of magnitude on transition into the superconducting state, consistent with the expected changes in the density of s...&lt;br/&gt;[Phys. Rev. Lett. 100, 136601] Published Thu Apr 03, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 136601</dc:source>
<dc:creator>N. Poli</dc:creator>
<dc:creator>J. P. Morten</dc:creator>
<dc:creator>M. Urech</dc:creator>
<dc:creator>Arne Brataas</dc:creator>
<dc:creator>D. B. Haviland</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-03T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.136601</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-03T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>136601</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-07-18T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e132401">
<title>Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction</title>
<link>http://link.aps.org/abstract/PRB/v77/e132401</link>
<description>Author(s): H.-X. Wei, M. C. Hickey, G. I. R. Anderson, X.-F. Han, and C. H. Marrows&lt;br/&gt;A current-induced magnetization switching has been observed in a microscale ring-shaped magnetic tunnel junction having an alumina barrier, which showed a tunneling magnetoresistance ratio of 37% and a resistance-area product of 175 Ω μm^{2}. Several metastable magnetization states were observed du...&lt;br/&gt;[Phys. Rev. B 77, 132401] Published Wed Apr 02, 2008</description>
<dc:source>Phys. Rev. B 77, 132401</dc:source>
<dc:creator>Hong-Xiang Wei</dc:creator>
<dc:creator>Mark C. Hickey</dc:creator>
<dc:creator>Graham I. R. Anderson</dc:creator>
<dc:creator>Xiu-Feng Han</dc:creator>
<dc:creator>Christopher H. Marrows</dc:creator>
<dc:date>2008-04-02T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.132401</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-02T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>132401</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-08-20T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e134403">
<title>Tunneling magnetoresistance with amorphous electrodes</title>
<link>http://link.aps.org/abstract/PRB/v77/e134403</link>
<description>Author(s): M. Gradhand, C. Heiliger, P. Zahn, and I. Mertig&lt;br/&gt;A detailed first-principles analysis of the transport properties of different magnetic electrode materials for MgO tunnel junctions is performed to elucidate the microscopic origin of the tunneling magnetoresistance (TMR) effect. The spin-dependent transport properties of the magnetic materials are...&lt;br/&gt;[Phys. Rev. B 77, 134403] Published Wed Apr 02, 2008</description>
<dc:source>Phys. Rev. B 77, 134403</dc:source>
<dc:creator>Martin Gradhand</dc:creator>
<dc:creator>Christian Heiliger</dc:creator>
<dc:creator>Peter Zahn</dc:creator>
<dc:creator>Ingrid Mertig</dc:creator>
<dc:date>2008-04-02T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.134403</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-02T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>134403</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-09-25T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155203">
<title>Planar Hall effect and uniaxial in-plane magnetic anisotropy in Mn δ-doped GaAs∕p-AlGaAs heterostructures</title>
<link>http://link.aps.org/abstract/PRB/v77/e155203</link>
<description>Author(s): A. M. Nazmul, H. T. Lin, S. N. Tran, S. Ohya, and M. Tanaka&lt;br/&gt;We have studied the planar Hall effect (PHE) in a Mn δ-doped GaAs-based heterostructure consisting of Mn δ-doped GaAs and p-type AlGaAs. We observe a distinct and large PHE and a specific in-plane [110] uniaxial magnetic anisotropy below the ferromagnetic transition temperature (T_{C}). This uniaxi...&lt;br/&gt;[Phys. Rev. B 77, 155203] Published Wed Apr 02, 2008</description>
<dc:source>Phys. Rev. B 77, 155203</dc:source>
<dc:creator>A. M. Nazmul</dc:creator>
<dc:creator>H. T. Lin</dc:creator>
<dc:creator>S. N. Tran</dc:creator>
<dc:creator>S. Ohya</dc:creator>
<dc:creator>M. Tanaka</dc:creator>
<dc:date>2008-04-02T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155203</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-02T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155203</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2006-06-01T00:00:00-05:00</prism:receptionDate>
</item>

</rdf:RDF>