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    <title>Nonadiabatic spin-transfer torque in (Ga,Mn)As with perpendicular anisotropy</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.193204</link>
    <description>Author(s): J.-P. Adam, N. Vernier, J. Ferr&#233;, A. Thiaville, V. Jeudy, A. Lema&#238;tre, L. Thevenard, and G. Faini&lt;br/&gt;Current-induced magnetic domain wall motion has been investigated in microtracks made from a ferromagnetic semiconductor (Ga,Mn)As thin film with perpendicular anisotropy. In order to reveal the nature of this motion, small fields were additionally applied. The results demonstrate that, when driven ...&lt;br/&gt;[Phys. Rev. B 80, 193204] Published Tue Nov 17, 2009</description>
    <dc:creator>J.-P. Adam, N. Vernier, J. Ferr&#233;, A. Thiaville, V. Jeudy, A. Lema&#238;tre, L. Thevenard, and G. Faini</dc:creator>
    <dc:date>2009-11-17T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.193204</dc:identifier>
    <dc:source>Phys. Rev. B 80, 193204</dc:source>
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    <title>Spin injection across the Fe/GaAs interface: Role of interfacial ordering</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201309</link>
    <description>Author(s): B. D. Schultz, N. Marom, D. Naveh, X. Lou, C. Adelmann, J. Strand, P. A. Crowell, L. Kronik, and C. J. Palmstr&#248;m&lt;br/&gt;Spin injection efficiency is shown to strongly depend on the interfacial structure between Fe contacts and Al_{x} Ga_{1&#8722;x} As in spin-based light emitting diodes. Both the magnitude and sign of the injected carriers are dependent on the atomic structure of the contacts and can be controlled throug...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201309] Published Mon Nov 16, 2009</description>
    <dc:creator>B. D. Schultz, N. Marom, D. Naveh, X. Lou, C. Adelmann, J. Strand, P. A. Crowell, L. Kronik, and C. J. Palmstr&#248;m</dc:creator>
    <dc:date>2009-11-16T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201309</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201310" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Charge ratchet from spin flip: Space-time symmetry paradox</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201310</link>
    <description>Author(s): Sergey Smirnov, Dario Bercioux, Milena Grifoni, and Klaus Richter&lt;br/&gt;Traditionally the charge ratchet effect is considered as a consequence of either the spatial symmetry breaking engineered by asymmetric periodic potentials, or time asymmetry of the driving fields. Here we demonstrate that electrically and magnetically driven quantum dissipative systems with spin-or...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201310] Published Mon Nov 16, 2009</description>
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    <dc:date>2009-11-16T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201310</dc:identifier>
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    <title>Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach</title>
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    <description>Author(s): Michele Virgilio and Giuseppe Grosso&lt;br/&gt;We present a theoretical investigation of electron-spin optical orientation in strained Ge/SiGe quantum wells. The atomistic sp^{3} d^{5} s^{&#8727;} nearest-neighbor tight-binding model adopted, allows us to obtain the spin polarization of the excited electrons, as a function of frequency and direction...&lt;br/&gt;[Phys. Rev. B 80, 205309] Published Wed Nov 11, 2009</description>
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    <dc:date>2009-11-11T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205309</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205309</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.184411" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Hydrodynamic theory of coupled current and magnetization dynamics in spin-textured ferromagnets</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.184411</link>
    <description>Author(s): Clement H. Wong and Yaroslav Tserkovnyak&lt;br/&gt;We develop the hydrodynamic theory of collinear spin currents coupled to magnetization dynamics in metallic ferromagnets. The collective spin density couples to the spin current through a U(1) Berry-phase gauge field determined by the local texture and dynamics of the magnetization. We determine phe...&lt;br/&gt;[Phys. Rev. B 80, 184411] Published Tue Nov 10, 2009</description>
    <dc:creator>Clement H. Wong and Yaroslav Tserkovnyak</dc:creator>
    <dc:date>2009-11-10T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.184411</dc:identifier>
    <dc:source>Phys. Rev. B 80, 184411</dc:source>
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    <prism:publicationName>Physical Review B</prism:publicationName>
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    <title>Spin Coulomb drag in a spin-polarized Luttinger liquid</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205110</link>
    <description>Author(s): P. Schlottmann&lt;br/&gt;The spin Coulomb drag is a distinctive feature of spin-polarized transport. The current of majority spins can induce a current of minority-spin carriers via the transconductivity. The friction is caused by the Coulomb interaction between up and down spin. This interaction reduces the current but doe...&lt;br/&gt;[Phys. Rev. B 80, 205110] Published Tue Nov 10, 2009</description>
    <dc:creator>P. Schlottmann</dc:creator>
    <dc:date>2009-11-10T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205110</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205110</dc:source>
    <dc:format>text/html</dc:format>
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    <prism:publicationName>Physical Review B</prism:publicationName>
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    <prism:publicationDate>2009-11-10T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205110</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.196804" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Surface States of Topological Insulators: The Dirac Fermion in Curved Two-Dimensional Spaces</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.196804</link>
    <description>Author(s): Dung-Hai Lee&lt;br/&gt;The surface of a topological insulator is a closed two-dimensional manifold. The surface states are described by the Dirac Hamiltonian in curved two-dimensional spaces. For a slablike sample with a magnetic field perpendicular to its top and bottom surfaces, there are chiral states delocalized on th...&lt;br/&gt;[Phys. Rev. Lett. 103, 196804] Published Thu Nov 05, 2009</description>
    <dc:creator>Dung-Hai Lee</dc:creator>
    <dc:date>2009-11-05T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.196804</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 196804</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
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    <prism:publicationDate>2009-11-05T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>196804</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.193303" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Electric-field induced modulation of the magneto-optical Kerr effect in a (Zn,Be,Mn)Se/GaAs spintronic device</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.193303</link>
    <description>Author(s): J. H. Versluis, A. V. Kimel, A. Kirilyuk, P. Grabs, F. Lehmann, G. Schmidt, L. W. Molenkamp, and Th. Rasing&lt;br/&gt;It is shown that when spin-polarized electrons are injected from a (Zn,Be,Mn)Se spin-aligner into GaAs, the magneto-optical Kerr effect from (Zn,Be,Mn)Se/GaAs spintronic device is strongly affected by a large electric-field at the (Zn,Be,Mn)Se/GaAs interface. This field causes the magneto-optical si...&lt;br/&gt;[Phys. Rev. B 80, 193303] Published Wed Nov 04, 2009</description>
    <dc:creator>J. H. Versluis, A. V. Kimel, A. Kirilyuk, P. Grabs, F. Lehmann, G. Schmidt, L. W. Molenkamp, and Th. Rasing</dc:creator>
    <dc:date>2009-11-04T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.193303</dc:identifier>
    <dc:source>Phys. Rev. B 80, 193303</dc:source>
    <dc:format>text/html</dc:format>
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    <prism:publicationName>Physical Review B</prism:publicationName>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.180403" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Role of the nonmagnetic layer in determining the Land&#233;  g -factor in a spin-transfer system</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.180403</link>
    <description>Author(s): J.-S. Lee, E. Vescovo, C.-C. Kao, J.-M. Beaujour, A. D. Kent, H. Jang, J.-Y. Kim, J.-H. Park, and J. H. Shim&lt;br/&gt;The microscopic origin of the Land&#233; g -factor in two ferromagnetic/nonmagnetic (FM/NM) bilayer systems-Co/Cu and Ni/Pd-has been investigated using x-ray magnetic circular dichroism, resonant magnetic reflectivity, and band calculations. The FM/NM bilayer represents the building block of any complet...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 180403] Published Mon Nov 02, 2009</description>
    <dc:creator>J.-S. Lee, E. Vescovo, C.-C. Kao, J.-M. Beaujour, A. D. Kent, H. Jang, J.-Y. Kim, J.-H. Park, and J. H. Shim</dc:creator>
    <dc:date>2009-11-02T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.180403</dc:identifier>
    <dc:source>Phys. Rev. B 80, 180403</dc:source>
    <dc:format>text/html</dc:format>
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    <prism:publicationName>Physical Review B</prism:publicationName>
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    <prism:publicationDate>2009-11-02T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>180403</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201302" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Localization in an inhomogeneous quantum wire</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201302</link>
    <description>Author(s): A. D. G&#252;&#231;l&#252;, C. J. Umrigar, Hong Jiang, and Harold U. Baranger&lt;br/&gt;We study interaction-induced localization of electrons in an inhomogeneous quasi-one-dimensional system&#8212;a wire with two regions, one at low density and the other high. Quantum Monte Carlo techniques are used to treat the strong Coulomb interactions in the low-density region, where localization of ...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201302] Published Mon Nov 02, 2009</description>
    <dc:creator>A. D. G&#252;&#231;l&#252;, C. J. Umrigar, Hong Jiang, and Harold U. Baranger</dc:creator>
    <dc:date>2009-11-02T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201302</dc:identifier>
    <dc:source>Phys. Rev. B 80, 201302</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.186601" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Swapping Spin Currents: Interchanging Spin and Flow Directions</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.186601</link>
    <description>Author(s): Maria B. Lifshits and Michel I. Dyakonov&lt;br/&gt;We introduce a previously unknown spin-related transport phenomenon, consisting of a transformation (swapping) of spin currents, in which the spin direction and the direction of flow are interchanged. Swapping is due to the spin-orbit interaction in scattering. It originates from the correlation bet...&lt;br/&gt;[Phys. Rev. Lett. 103, 186601] Published Fri Oct 30, 2009</description>
    <dc:creator>Maria B. Lifshits and Michel I. Dyakonov</dc:creator>
    <dc:date>2009-10-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.186601</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 186601</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
    <prism:issueIdentifier>18</prism:issueIdentifier>
    <prism:publicationDate>2009-10-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>186601</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.153105" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Intrinsic spin Hall effect in noncubic crystals</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.153105</link>
    <description>Author(s): E. M. Chudnovsky&lt;br/&gt;We study the dependence of the intrinsic spin Hall effect on the crystal symmetry and geometry of experiment. The spin current is obtained and the Hall voltage caused by the polarization of the electron spins is computed. The unique dependence of the effect on the crystal symmetry permits the choice...&lt;br/&gt;[Phys. Rev. B 80, 153105] Published Wed Oct 28, 2009</description>
    <dc:creator>E. M. Chudnovsky</dc:creator>
    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.153105</dc:identifier>
    <dc:source>Phys. Rev. B 80, 153105</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>153105</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155329" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Quantum size effects in competing charge and spin orderings of dangling bond wires on Si(001)</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155329</link>
    <description>Author(s): Ji Young Lee, Jun-Hyung Cho, and Zhenyu Zhang&lt;br/&gt;Using spin-polarized density-functional theory calculations, we investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated Si(001) surface. For wires containing less than ten DBs as studied in recent experiments, we f...&lt;br/&gt;[Phys. Rev. B 80, 155329] Published Wed Oct 28, 2009</description>
    <dc:creator>Ji Young Lee, Jun-Hyung Cho, and Zhenyu Zhang</dc:creator>
    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155329</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155329</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155329</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.161206" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.161206</link>
    <description>Author(s): M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstr&#248;m, and P. A. Crowell&lt;br/&gt;Measurements and modeling of electron-spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with n-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolariz...&lt;br/&gt;&lt;img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/&gt;&lt;br/&gt; &lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161206] Published Wed Oct 28, 2009</description>
    <dc:creator>M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstr&#248;m, and P. A. Crowell</dc:creator>
    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.161206</dc:identifier>
    <dc:source>Phys. Rev. B 80, 161206</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>161206</prism:startingPage>
    <dc:subject>Semiconductors I: bulk</dc:subject>
    <prism:section>Semiconductors I: bulk</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165325" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Anisotropic optical spin Hall effect in semiconductor microcavities</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165325</link>
    <description>Author(s): A. Amo, T. C. H. Liew, C. Adrados, E. Giacobino, A. V. Kavokin, and A. Bramati&lt;br/&gt;Propagating, directionally dependent, polarized spin currents are created in an anisotropic planar semiconductor microcavity, via Rayleigh scattering of optically injected polaritons in the optical spin Hall regime. The influence of anisotropy results in suppression or enhancement of the pseudospin ...&lt;br/&gt;[Phys. Rev. B 80, 165325] Published Fri Oct 23, 2009</description>
    <dc:creator>A. Amo, T. C. H. Liew, C. Adrados, E. Giacobino, A. V. Kavokin, and A. Bramati</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165325</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165325</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-23T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165325</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155440" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155440</link>
    <description>Author(s): J. Wan, M. Cahay, P. Debray, and R. Newrock&lt;br/&gt;A nonequilibrium Green&#8217;s function formalism is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of the lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC betwee...&lt;br/&gt;[Phys. Rev. B 80, 155440] Published Mon Oct 19, 2009</description>
    <dc:creator>J. Wan, M. Cahay, P. Debray, and R. Newrock</dc:creator>
    <dc:date>2009-10-19T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155440</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155440</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-19T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155440</prism:startingPage>
    <dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
    <prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.144411" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Effect of polarizer dynamics on current-induced behaviors in magnetic nanopillars</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.144411</link>
    <description>Author(s): Sergei Urazhdin, Weng Lee Lim, and Andrew Higgins&lt;br/&gt;Magnetoelectronic nanodevices such as magnetic random access memory include two essential magnetic layers: a polarizing reference layer and a free layer whose configuration can be changed by spin-polarized current via spin-transfer effect. We present measurements of current-induced behaviors in nano...&lt;br/&gt;[Phys. Rev. B 80, 144411] Published Thu Oct 15, 2009</description>
    <dc:creator>Sergei Urazhdin, Weng Lee Lim, and Andrew Higgins</dc:creator>
    <dc:date>2009-10-15T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.144411</dc:identifier>
    <dc:source>Phys. Rev. B 80, 144411</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>14</prism:issueIdentifier>
    <prism:publicationDate>2009-10-15T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>144411</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165320" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Spin edge states: An exact solution and oscillations of the spin current</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165320</link>
    <description>Author(s): V. L. Grigoryan, A. Matos Abiague, and S. M. Badalyan&lt;br/&gt;We study the spin edge states, induced by the combined effect of spin-orbit interaction (SOI) and hard-wall confining potential, in a two-dimensional electron system, exposed to a perpendicular magnetic field. We find an exact solution of the problem and show that the spin-resolved edge states are s...&lt;br/&gt;[Phys. Rev. B 80, 165320] Published Thu Oct 15, 2009</description>
    <dc:creator>V. L. Grigoryan, A. Matos Abiague, and S. M. Badalyan</dc:creator>
    <dc:date>2009-10-15T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165320</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165320</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-15T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165320</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.132403" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Scaling of spin relaxation and angular momentum dissipation in permalloy nanowires</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.132403</link>
    <description>Author(s): T. A. Moore, M. Kl&#228;ui, L. Heyne, P. M&#246;hrke, D. Backes, J. Rhensius, U. R&#252;diger, L. J. Heyderman, J.-U. Thiele, G. Woltersdorf, C. H. Back, A. Fraile Rodr&#237;guez, F. Nolting, T. O. Mentes, M. &#193;. Ni&#241;o, A. Locatelli, A. Potenza, H. Marchetto, S. Cavill, and S. S. Dhesi&lt;br/&gt;We study the relationship between the damping (&#945;) and the nonadiabaticity of the spin transport (&#946;) in permalloy nanowires. &#945; is engineered by Ho doping, and from the characteristics of the current-induced domain-wall velocity, determined by high-resolution x-ray magnetic circular-dichroism photo...&lt;br/&gt;[Phys. Rev. B 80, 132403] Published Wed Oct 14, 2009</description>
    <dc:creator>T. A. Moore, M. Kl&#228;ui, L. Heyne, P. M&#246;hrke, D. Backes, J. Rhensius, U. R&#252;diger, L. J. Heyderman, J.-U. Thiele, G. Woltersdorf, C. H. Back, A. Fraile Rodr&#237;guez, F. Nolting, T. O. Mentes, M. &#193;. Ni&#241;o, A. Locatelli, A. Potenza, H. Marchetto, S. Cavill, and S. S. Dhesi</dc:creator>
    <dc:date>2009-10-14T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.132403</dc:identifier>
    <dc:source>Phys. Rev. B 80, 132403</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>13</prism:issueIdentifier>
    <prism:publicationDate>2009-10-14T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>132403</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155202" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Magnetoswitching of current oscillations in dilute magnetic semiconductor nanostructures</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155202</link>
    <description>Author(s): R. Escobedo, M. Carretero, L. L. Bonilla, and G. Platero&lt;br/&gt;Strongly nonlinear transport through dilute magnetic semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb, and exchange interaction. Nonlinear effects include the appearance of spin-polarized stationary states and self-sustained current oscillations as possible s...&lt;br/&gt;[Phys. Rev. B 80, 155202] Published Tue Oct 13, 2009</description>
    <dc:creator>R. Escobedo, M. Carretero, L. L. Bonilla, and G. Platero</dc:creator>
    <dc:date>2009-10-13T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155202</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155202</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-13T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155202</prism:startingPage>
    <dc:subject>Semiconductors I: bulk</dc:subject>
    <prism:section>Semiconductors I: bulk</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.157202" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Direct Current Control of Three Magnon Scattering Processes in Spin-Valve Nanocontacts</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.157202</link>
    <description>Author(s): H. Schultheiss, X. Janssens, M. van Kampen, F. Ciubotaru, S. J. Hermsdoerfer, B. Obry, A. Laraoui, A. A. Serga, L. Lagae, A. N. Slavin, B. Leven, and B. Hillebrands&lt;br/&gt;We have investigated the generation of spin waves in the free layer of an extended spin-valve structure with a nanoscaled point contact driven by both microwave and direct electric current using Brillouin light scattering microscopy. Simultaneously with the directly excited spin waves, strong nonlin...&lt;br/&gt;[Phys. Rev. Lett. 103, 157202] Published Thu Oct 08, 2009</description>
    <dc:creator>H. Schultheiss, X. Janssens, M. van Kampen, F. Ciubotaru, S. J. Hermsdoerfer, B. Obry, A. Laraoui, A. A. Serga, L. Lagae, A. N. Slavin, B. Leven, and B. Hillebrands</dc:creator>
    <dc:date>2009-10-08T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.157202</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 157202</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-08T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>157202</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155416" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Wave-vector-dependent spin filtering and spin transport through magnetic barriers in graphene</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155416</link>
    <description>Author(s): L. Dell&#8217;Anna and A. De Martino&lt;br/&gt;We study the spin-resolved transport through magnetic nanostructures in monolayer and bilayer graphene. We take into account both the orbital effect of the inhomogeneous perpendicular magnetic field as well as the in-plane spin splitting due to the Zeeman interaction and to the exchange coupling pos...&lt;br/&gt;[Phys. Rev. B 80, 155416] Published Tue Oct 06, 2009</description>
    <dc:creator>L. Dell&#8217;Anna and A. De Martino</dc:creator>
    <dc:date>2009-10-06T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155416</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155416</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-06T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155416</prism:startingPage>
    <dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
    <prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.146601" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Magnetoresistance in Hybrid Organic Spin Valves at the Onset of Multiple-Step Tunneling</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.146601</link>
    <description>Author(s): J. J. Schoonus, P. G. Lumens, W. Wagemans, J. T. Kohlhepp, P. A. Bobbert, H. J. Swagten, and B. Koopmans&lt;br/&gt;By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al_{2} O_{3} (1.5&#8201;&#8201;nm)/tris(8-hydroxyquinoline)aluminium (Alq_{3} )/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss...&lt;br/&gt;[Phys. Rev. Lett. 103, 146601] Published Fri Oct 02, 2009</description>
    <dc:creator>J. J. Schoonus, P. G. Lumens, W. Wagemans, J. T. Kohlhepp, P. A. Bobbert, H. J. Swagten, and B. Koopmans</dc:creator>
    <dc:date>2009-10-02T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.146601</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 146601</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
    <prism:issueIdentifier>14</prism:issueIdentifier>
    <prism:publicationDate>2009-10-02T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>146601</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.140401" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Vortex oscillations induced by spin-polarized current in a magnetic nanopillar: Analytical versus micromagnetic calculations</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.140401</link>
    <description>Author(s): A. V. Khvalkovskiy, J. Grollier, A. Dussaux, Konstantin A. Zvezdin, and V. Cros&lt;br/&gt;We investigate the vortex excitations induced by a spin-polarized current in a magnetic nanopillar by means of micromagnetic simulations and analytical calculations. Damped motion, stationary vortex rotation and the switching of the vortex core are successively observed for increasing values of the ...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 140401] Published Fri Oct 02, 2009</description>
    <dc:creator>A. V. Khvalkovskiy, J. Grollier, A. Dussaux, Konstantin A. Zvezdin, and V. Cros</dc:creator>
    <dc:date>2009-10-02T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.140401</dc:identifier>
    <dc:source>Phys. Rev. B 80, 140401</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>14</prism:issueIdentifier>
    <prism:publicationDate>2009-10-02T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>140401</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155301" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Gate-induced  g -factor control and dimensional transition for donors in multivalley semiconductors</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155301</link>
    <description>Author(s): Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, and Lloyd C. L. Hollenberg&lt;br/&gt;The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g -factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is stro...&lt;br/&gt;[Phys. Rev. B 80, 155301] Published Thu Oct 01, 2009</description>
    <dc:creator>Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, and Lloyd C. L. Hollenberg</dc:creator>
    <dc:date>2009-10-01T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155301</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155301</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-01T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165302" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Transverse force generated by an electric field and transverse charge imbalance in spin-orbit coupled systems</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165302</link>
    <description>Author(s): Tsung-Wei Chen, Hsiu-Chuan Hsu, and Guang-Yu Guo&lt;br/&gt;We use linear-response theory to study the transverse force generated by an external electric field and hence possible charge Hall effect in spin-orbit coupled systems. In addition to the Lorentz force that is parallel to the electric field, we find that the transverse force perpendicular to the app...&lt;br/&gt;[Phys. Rev. B 80, 165302] Published Thu Oct 01, 2009</description>
    <dc:creator>Tsung-Wei Chen, Hsiu-Chuan Hsu, and Guang-Yu Guo</dc:creator>
    <dc:date>2009-10-01T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165302</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165302</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-01T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.146402" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.146402</link>
    <description>Author(s): D. H&#228;gele, S. Pfalz, and M. Oestreich&lt;br/&gt;We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexcito...&lt;br/&gt;[Phys. Rev. Lett. 103, 146402] Published Wed Sep 30, 2009</description>
    <dc:creator>D. H&#228;gele, S. Pfalz, and M. Oestreich</dc:creator>
    <dc:date>2009-09-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.146402</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 146402</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
    <prism:issueIdentifier>14</prism:issueIdentifier>
    <prism:publicationDate>2009-09-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>146402</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.115337" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Interplay among spin, orbital effects, and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.115337</link>
    <description>Author(s): B. A. Piot, D. K. Maude, U. Gennser, A. Cavanna, and D. Mailly&lt;br/&gt;The magnetoresistance of a low carrier density disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization of the carriers shifts down by more than 20 T as the electron ...&lt;br/&gt;[Phys. Rev. B 80, 115337] Published Wed Sep 30, 2009</description>
    <dc:creator>B. A. Piot, D. K. Maude, U. Gennser, A. Cavanna, and D. Mailly</dc:creator>
    <dc:date>2009-09-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.115337</dc:identifier>
    <dc:source>Phys. Rev. B 80, 115337</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>11</prism:issueIdentifier>
    <prism:publicationDate>2009-09-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>115337</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.146801" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Spin-Orbit-Mediated Spin Relaxation in Graphene</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.146801</link>
    <description>Author(s): D. Huertas-Hernando, F. Guinea, and Arne Brataas&lt;br/&gt;We investigate how spins relax in intrinsic graphene. The spin-orbit coupling arises from the band structure and is enhanced by ripples. The orbital motion is influenced by scattering centers and ripple-induced gauge fields. Spin relaxation due to Elliot-Yafet and Dyakonov-Perel mechanisms and gauge...&lt;br/&gt;[Phys. Rev. Lett. 103, 146801] Published Tue Sep 29, 2009</description>
    <dc:creator>D. Huertas-Hernando, F. Guinea, and Arne Brataas</dc:creator>
    <dc:date>2009-09-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.146801</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 146801</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
    <prism:issueIdentifier>14</prism:issueIdentifier>
    <prism:publicationDate>2009-09-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>146801</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.104436" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Pump-probe Faraday rotation and ellipticity in an ensemble of singly charged quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.104436</link>
    <description>Author(s): I. A. Yugova, M. M. Glazov, E. L. Ivchenko, and Al. L. Efros&lt;br/&gt;A description of spin Faraday rotation, Kerr rotation and ellipticity signals for single- and multilayer ensembles of singly charged quantum dots (QDs) is developed. The microscopic theory considers both the single pump-pulse excitation and the effect of a train of such pulses, which in the case of ...&lt;br/&gt;[Phys. Rev. B 80, 104436] Published Tue Sep 29, 2009</description>
    <dc:creator>I. A. Yugova, M. M. Glazov, E. L. Ivchenko, and Al. L. Efros</dc:creator>
    <dc:date>2009-09-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.104436</dc:identifier>
    <dc:source>Phys. Rev. B 80, 104436</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>10</prism:issueIdentifier>
    <prism:publicationDate>2009-09-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>104436</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
</rdf:RDF>
