<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns:taxo="http://purl.org/rss/1.0/modules/taxonomy/" xmlns:syn="http://purl.org/rss/1.0/modules/syndication/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:admin="http://webns.net/mvcb/" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns="http://purl.org/rss/1.0/">
  <channel rdf:about="http://prl.aps.org/">
    <title>Physical Review: Metal-insulator transitions</title>
    <link>http://prl.aps.org/</link>
    <description>Metal-insulator transitions articles published in Physical Review Journals</description>
    <dc:language>en-us</dc:language>
    <dc:rights>Copyright (c) 2009 The American Physical Society</dc:rights>
    <dc:date>2009-11-22T20:25:23-05:00</dc:date>
    <dc:publisher>assocpub@aps.org</dc:publisher>
    <dc:creator>rss@aps.org</dc:creator>
    <syn:updatePeriod>hourly</syn:updatePeriod>
    <syn:updateFrequency>4</syn:updateFrequency>
    <syn:updateBase>2009-11-22T20:25:23-05:00</syn:updateBase>
    <prism:rightsAgent>rss@aps.org</prism:rightsAgent>
    <items>
      <rdf:Seq>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.174205"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.195416"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.205116"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.174414"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.195110"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.205112"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.193103"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevA.80.051602"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevLett.103.207001"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.205109"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.174506"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.195107"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.165132"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.169907"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.165130"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.165429"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.153102"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.155130"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.161104"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.132406"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.134514"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.155441"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevE.80.045201"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.155432"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.155119"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.161102"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.161302"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.165114"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.165115"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.80.155115"/>
      </rdf:Seq>
    </items>
  </channel>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.174205" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Localization-delocalization transitions in a two-dimensional quantum percolation model: von Neumann entropy studies</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.174205</link>
    <description>Author(s): Longyan Gong and Peiqing Tong&lt;br/&gt;In two-dimensional quantum site-percolation square lattice models, the von Neumann entropy is extensively studied numerically. At a certain eigenenergy, the localization-delocalization transition is reflected by the derivative of von Neumann entropy which is maximal at the quantum percolation thresh...&lt;br/&gt;[Phys. Rev. B 80, 174205] Published Fri Nov 20, 2009</description>
    <dc:creator>Longyan Gong and Peiqing Tong</dc:creator>
    <dc:date>2009-11-20T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.174205</dc:identifier>
    <dc:source>Phys. Rev. B 80, 174205</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>17</prism:issueIdentifier>
    <prism:publicationDate>2009-11-20T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>174205</prism:startingPage>
    <dc:subject>Inhomogeneous, disordered, and partially ordered systems</dc:subject>
    <prism:section>Inhomogeneous, disordered, and partially ordered systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195416" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Hard energy gap and current-path switching in ordered two-dimensional nanodot arrays prepared by focused electron-beam-induced deposition</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195416</link>
    <description>Author(s): Roland Sachser, Fabrizio Porrati, and Michael Huth&lt;br/&gt;We present electronic transport measurements on ordered two-dimensional nanodot arrays with dot diameters of about 20 nm prepared by focused electron-beam-induced deposition (FEBID). Low-temperature conductance measurements and I/V characteristics strongly indicate that single electron transport thr...&lt;br/&gt;[Phys. Rev. B 80, 195416] Published Wed Nov 18, 2009</description>
    <dc:creator>Roland Sachser, Fabrizio Porrati, and Michael Huth</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195416</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195416</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>19</prism:issueIdentifier>
    <prism:publicationDate>2009-11-18T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195416</prism:startingPage>
    <dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
    <prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205116" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Pressure-induced structural and electronic transitions in FeOOH from first principles</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205116</link>
    <description>Author(s): Katrin Otte, Rossitza Pentcheva, Wolfgang W. Schmahl, and James R. Rustad&lt;br/&gt;Using density-functional theory, we investigate the stability, structural, magnetic, and electronic properties of the iron oxyhydroxide polymorphs [ &#945; -, &#946; -, &#947; -, and hp(&#1013;)-FeOOH ] under hydrostatic pressure. At ambient conditions goethite (&#945;) is the lowest energy phase, consistent with recent...&lt;br/&gt;[Phys. Rev. B 80, 205116] Published Wed Nov 18, 2009</description>
    <dc:creator>Katrin Otte, Rossitza Pentcheva, Wolfgang W. Schmahl, and James R. Rustad</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205116</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205116</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>20</prism:issueIdentifier>
    <prism:publicationDate>2009-11-18T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205116</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.174414" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Magnetic and electronic properties of  Eu_{1&#8722;x} Sr_{x} MnO_{3}    (0.3&lt;x&lt;0.7)  single crystals</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.174414</link>
    <description>Author(s): Y. Tomioka, R. Kumai, T. Ito, and Y. Tokura&lt;br/&gt;Among versatile perovskite manganites showing colossal magnetoresistance (CMR), Eu_{1&#8722;x} Sr_{x} MnO_{3} around x&#8764;0.4 shows the ferromagnetic metal with the lowest transition temperature (&#8764;40&#8194;K) due to the narrowest one-electron bandwidth and hence is readily subject to the drastic phase chan...&lt;br/&gt;[Phys. Rev. B 80, 174414] Published Tue Nov 17, 2009</description>
    <dc:creator>Y. Tomioka, R. Kumai, T. Ito, and Y. Tokura</dc:creator>
    <dc:date>2009-11-17T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.174414</dc:identifier>
    <dc:source>Phys. Rev. B 80, 174414</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>17</prism:issueIdentifier>
    <prism:publicationDate>2009-11-17T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>174414</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195110" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Temperature dependence of the electronic structure of the  J_{eff} = 1/2   Mott insulator  Sr_{2} IrO_{4}   studied by optical spectroscopy</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195110</link>
    <description>Author(s): S. J. Moon, Hosub Jin, W. S. Choi, J. S. Lee, S. S. A. Seo, J. Yu, G. Cao, T. W. Noh, and Y. S. Lee&lt;br/&gt;We investigated the temperature-dependent evolution of the electronic structure of the J_{eff} = 1/2 Mott insulator Sr_{2} IrO_{4} using optical spectroscopy. The optical conductivity spectra &#963;(&#969;) of this compound has recently been found to exhibit two d-d transitions associated with the transitio...&lt;br/&gt;[Phys. Rev. B 80, 195110] Published Tue Nov 17, 2009</description>
    <dc:creator>S. J. Moon, Hosub Jin, W. S. Choi, J. S. Lee, S. S. A. Seo, J. Yu, G. Cao, T. W. Noh, and Y. S. Lee</dc:creator>
    <dc:date>2009-11-17T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195110</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195110</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>19</prism:issueIdentifier>
    <prism:publicationDate>2009-11-17T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195110</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205112" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Valence-state transition in  SrMn_{1&#8722;x} Mo_{x} O_{3}    (0&#8804;x&#8804;0.5)  investigated by soft x-ray absorption spectroscopy</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205112</link>
    <description>Author(s): Jieun Lee, Bongjae Kim, B. H. Kim, B. I. Min, S. Kolesnik, O. Chmaissem, J. Mais, B. Dabrowski, H. J. Shin, D. H. Kim, H. J. Lee, and J.-S. Kang&lt;br/&gt;The electronic structures of perovskite SrMn_{1&#8722;x} Mo_{x} O_{3} (0&#8804;x&#8804;0.5) have been investigated by employing soft x-ray absorption spectroscopy (XAS). Mn&#8201;2p XAS shows the systematic change in the valence states of Mn ions in SrMn_{1&#8722;x} Mo_{x} O_{3} due to the substitution of hexavalent Mo...&lt;br/&gt;[Phys. Rev. B 80, 205112] Published Fri Nov 13, 2009</description>
    <dc:creator>Jieun Lee, Bongjae Kim, B. H. Kim, B. I. Min, S. Kolesnik, O. Chmaissem, J. Mais, B. Dabrowski, H. J. Shin, D. H. Kim, H. J. Lee, and J.-S. Kang</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205112</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205112</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>20</prism:issueIdentifier>
    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205112</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.193103" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Anisotropic giant magnetoresistance near the Mott transition in pressurized  Ca_{2} RuO_{4}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.193103</link>
    <description>Author(s): Fumihiko Nakamura, Ryuji Nakai, Tetsuo Takemoto, Mariko Sakaki, Takashi Suzuki, Patricia Lebre Alireza, Satoru Nakatsuji, and Yoshiteru Maeno&lt;br/&gt;We have observed an anisotropic and giant magnetoresistance (MR) in the 4d -electron Mott transition system of Ca_{2} RuO_{4} . On the border of the Mott transition (&#8764;2&#8194;GPa) , the MR effect at &#8764;10&#8194;T reaches &#8764;&#8722;55% at T_{C} for longitudinal and &#8764;+120% at low temperatures for the transver...&lt;br/&gt;[Phys. Rev. B 80, 193103] Published Wed Nov 11, 2009</description>
    <dc:creator>Fumihiko Nakamura, Ryuji Nakai, Tetsuo Takemoto, Mariko Sakaki, Takashi Suzuki, Patricia Lebre Alireza, Satoru Nakatsuji, and Yoshiteru Maeno</dc:creator>
    <dc:date>2009-11-11T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.193103</dc:identifier>
    <dc:source>Phys. Rev. B 80, 193103</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>19</prism:issueIdentifier>
    <prism:publicationDate>2009-11-11T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>193103</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevA.80.051602" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Mott transitions in ternary flavor mixtures of ultracold fermions on optical lattices</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevA.80.051602</link>
    <description>Author(s): E. V. Gorelik and N. Bl&#252;mer&lt;br/&gt;Ternary flavor mixtures of ultracold fermionic atoms in an optical lattice are studied in the case of equal repulsive on-site interactions U&gt;0 . The corresponding SU(3) invariant Hubbard model is solved numerically exactly within dynamical mean-field theory using multigrid Hirsch-Fye quantum Monte Ca...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. A 80, 051602] Published Wed Nov 11, 2009</description>
    <dc:creator>E. V. Gorelik and N. Bl&#252;mer</dc:creator>
    <dc:date>2009-11-11T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevA.80.051602</dc:identifier>
    <dc:source>Phys. Rev. A 80, 051602</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review A</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>5</prism:issueIdentifier>
    <prism:publicationDate>2009-11-11T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>051602</prism:startingPage>
    <dc:subject>Matter waves and collective properties of cold atoms and molecules</dc:subject>
    <prism:section>Matter waves and collective properties of cold atoms and molecules</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.103.207001" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>&#960; Junction to Probe Antiphase s-Wave Pairing in Iron Pnictide Superconductors</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.103.207001</link>
    <description>Author(s): Wei-Qiang Chen, Fengjie Ma, Zhong-Yi Lu, and Fu-Chun Zhang&lt;br/&gt;Josephson junctions between a FeAs-based superconductor with antiphase s-wave pairing and a conventional s-wave superconductor are studied. The translational invariance in a planar junction between a single crystal pnictide and an aluminum metal greatly enhances the relative weight of electron pocke...&lt;br/&gt;[Phys. Rev. Lett. 103, 207001] Published Tue Nov 10, 2009</description>
    <dc:creator>Wei-Qiang Chen, Fengjie Ma, Zhong-Yi Lu, and Fu-Chun Zhang</dc:creator>
    <dc:date>2009-11-10T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevLett.103.207001</dc:identifier>
    <dc:source>Phys. Rev. Lett. 103, 207001</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>103</prism:volume>
    <prism:issueIdentifier>20</prism:issueIdentifier>
    <prism:publicationDate>2009-11-10T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>207001</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205109" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Pairing dynamics in strongly correlated superconductivity</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205109</link>
    <description>Author(s): B. Kyung, D. S&#233;n&#233;chal, and A.-M. S. Tremblay&lt;br/&gt;Confirmation of the phononic origin of Cooper pair formation in superconductors came with the demonstration that the interaction was retarded and that the corresponding energy scales were associated with phonons. Using cellular dynamical mean-field theory for the two-dimensional Hubbard model, we id...&lt;br/&gt;[Phys. Rev. B 80, 205109] Published Mon Nov 09, 2009</description>
    <dc:creator>B. Kyung, D. S&#233;n&#233;chal, and A.-M. S. Tremblay</dc:creator>
    <dc:date>2009-11-09T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205109</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205109</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>20</prism:issueIdentifier>
    <prism:publicationDate>2009-11-09T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205109</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.174506" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Evidence for exchange interaction between donor and acceptor layers in  &#946;^{&#8242;}  -(BEDT-TTF)(TCNQ)</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.174506</link>
    <description>Author(s): Yoshihiro Eto, Atsushi Kawamoto, Noriaki Matsunaga, Kazushige Nomura, Kaoru Yamamoto, and Kyuya Yakushi&lt;br/&gt;We assessed the infrared-absorption spectra and ^{13} C -NMR measurements in a layered organic salt, &#946;^{&#8242;} -(BEDT-TTF)(TCNQ), which exhibits antiferromagnetic transitions at 20 and 3 K. The former originates from the spin in the bis-(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) layers, while the...&lt;br/&gt;[Phys. Rev. B 80, 174506] Published Fri Nov 06, 2009</description>
    <dc:creator>Yoshihiro Eto, Atsushi Kawamoto, Noriaki Matsunaga, Kazushige Nomura, Kaoru Yamamoto, and Kyuya Yakushi</dc:creator>
    <dc:date>2009-11-06T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.174506</dc:identifier>
    <dc:source>Phys. Rev. B 80, 174506</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>17</prism:issueIdentifier>
    <prism:publicationDate>2009-11-06T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>174506</prism:startingPage>
    <dc:subject>Superfluidity and superconductivity</dc:subject>
    <prism:section>Superfluidity and superconductivity</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195107" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Optical conductivity and x-ray absorption spectra of the Mott-Hubbard compounds  RVO_{3}   ( R=Sr , Ca, La, and Y)</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195107</link>
    <description>Author(s): R. J. O. Mossanek, M. Abbate, P. T. Fonseca, A. Fujimori, H. Eisaki, S. Uchida, and Y. Tokura&lt;br/&gt;Core-level and valence-band optical spectra provide important information on highly correlated systems. The former corresponds to transitions from the core level to the conduction band, and it is usually related to the unoccupied electronic structure. The later corresponds to transitions from the va...&lt;br/&gt;[Phys. Rev. B 80, 195107] Published Fri Nov 06, 2009</description>
    <dc:creator>R. J. O. Mossanek, M. Abbate, P. T. Fonseca, A. Fujimori, H. Eisaki, S. Uchida, and Y. Tokura</dc:creator>
    <dc:date>2009-11-06T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195107</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195107</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>19</prism:issueIdentifier>
    <prism:publicationDate>2009-11-06T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195107</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165132" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Doping dependence of the chemical potential and surface electronic structure in  YBa_{2} Cu_{3} O_{6+x}   and  La_{2&#8722;x} Sr_{x} CuO_{4}   using hard x-ray photoemission spectroscopy</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165132</link>
    <description>Author(s): Kalobaran Maiti, J&#246;rg Fink, Sanne de Jong, Mihaela Gorgoi, Chengtian Lin, Markus Raichle, Vladimir Hinkov, Michael Lambacher, Andreas Erb, and Mark S. Golden&lt;br/&gt;The electronic structure of YBa_{2} Cu_{3} O_{6+x} and La_{2&#8722;x} Sr_{x} CuO_{4} for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa_{2} Cu_{3} O_{6+x} compounds occurs predominantly in the BaCuO_{3} c...&lt;br/&gt;[Phys. Rev. B 80, 165132] Published Fri Oct 30, 2009</description>
    <dc:creator>Kalobaran Maiti, J&#246;rg Fink, Sanne de Jong, Mihaela Gorgoi, Chengtian Lin, Markus Raichle, Vladimir Hinkov, Michael Lambacher, Andreas Erb, and Mark S. Golden</dc:creator>
    <dc:date>2009-10-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165132</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165132</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165132</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.169907" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Publisher's Note: Continuous metal-insulator transition of the antiferromagnetic perovskite  NaOsO_{3}   [Phys. Rev. B 80, 161104(R) (2009)]</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.169907</link>
    <description>Author(s): Y. G. Shi, Y. F. Guo, S. Yu, M. Arai, A. A. Belik, A. Sato, K. Yamaura, E. Takayama-Muromachi, H. F. Tian, H. X. Yang, J. Q. Li, T. Varga, J. F. Mitchell, and S. Okamoto&lt;br/&gt;[Phys. Rev. B 80, 169907] Published Fri Oct 30, 2009</description>
    <dc:creator>Y. G. Shi, Y. F. Guo, S. Yu, M. Arai, A. A. Belik, A. Sato, K. Yamaura, E. Takayama-Muromachi, H. F. Tian, H. X. Yang, J. Q. Li, T. Varga, J. F. Mitchell, and S. Okamoto</dc:creator>
    <dc:date>2009-10-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.169907</dc:identifier>
    <dc:source>Phys. Rev. B 80, 169907</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>169907</prism:startingPage>
    <dc:subject>ERRATA</dc:subject>
    <prism:section>ERRATA</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165130" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>First-principles studies of a two-dimensional electron gas at the interface in ferroelectric oxide heterostructures</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165130</link>
    <description>Author(s): Yong Wang, Manish K. Niranjan, S. S. Jaswal, and Evgeny Y. Tsymbal&lt;br/&gt;The discovery of a two-dimensional electron gas (2DEG) at the interface between two insulating oxides has recently stimulated intense research activity in this field. The 2DEG has unique properties that are promising for applications in all-oxide electronic devices. For such applications it is desir...&lt;br/&gt;[Phys. Rev. B 80, 165130] Published Thu Oct 29, 2009</description>
    <dc:creator>Yong Wang, Manish K. Niranjan, S. S. Jaswal, and Evgeny Y. Tsymbal</dc:creator>
    <dc:date>2009-10-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165130</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165130</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165130</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165429" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Supercritical Coulomb center and excitonic instability in graphene</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165429</link>
    <description>Author(s): O. V. Gamayun, E. V. Gorbar, and V. P. Gusynin&lt;br/&gt;It is well known that there are resonant states with complex energy for the supercritical Coulomb impurity in graphene. We show that opening of a quasiparticle gap decreases the imaginary part of energy, |Im&#8201;E| , of these states and stabilizes the system. For gapless quasiparticles with strong Cou...&lt;br/&gt;[Phys. Rev. B 80, 165429] Published Wed Oct 28, 2009</description>
    <dc:creator>O. V. Gamayun, E. V. Gorbar, and V. P. Gusynin</dc:creator>
    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165429</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165429</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165429</prism:startingPage>
    <dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
    <prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.153102" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Charge ordering driven metal-insulator transition in the layered cobaltite  HoBaCo_{2} O_{5.5}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.153102</link>
    <description>Author(s): Lorenzo Malavasi, Michela Brunelli, Yuri Diaz-Fernandez, Bholanath Pahari, and Piercarlo Mustarelli&lt;br/&gt;In this Brief Report we report high-resolution synchrotron x-ray diffraction and x-ray pair-distribution-function analysis as a function of temperature on the HoBaCo_{2} O_{5.5} cobaltite. These investigations provided a direct evidence of a structural phase transition from an orthorhombic to a mono...&lt;br/&gt;[Phys. Rev. B 80, 153102] Published Fri Oct 23, 2009</description>
    <dc:creator>Lorenzo Malavasi, Michela Brunelli, Yuri Diaz-Fernandez, Bholanath Pahari, and Piercarlo Mustarelli</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.153102</dc:identifier>
    <dc:source>Phys. Rev. B 80, 153102</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-23T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>153102</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155130" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Surface polaron formation in the Holstein model</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155130</link>
    <description>Author(s): Reza Nourafkan, Massimo Capone, and Nasser Nafari&lt;br/&gt;The effect of a solid-vacuum interface on the properties of a strongly coupled electron-phonon system is analyzed using dynamical mean-field theory to solve the Holstein model in a semi-infinite cubic lattice. Polaron formation is found to occur more easily, i.e., for a weaker electron-phonon coupli...&lt;br/&gt;[Phys. Rev. B 80, 155130] Published Fri Oct 23, 2009</description>
    <dc:creator>Reza Nourafkan, Massimo Capone, and Nasser Nafari</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155130</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155130</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-23T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155130</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.161104" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Continuous metal-insulator transition of the antiferromagnetic perovskite  NaOsO_{3}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.161104</link>
    <description>Author(s): Y. G. Shi, Y. F. Guo, S. Yu, M. Arai, A. A. Belik, A. Sato, K. Yamaura, E. Takayama-Muromachi, H. F. Tian, H. X. Yang, J. Q. Li, T. Varga, J. F. Mitchell, and S. Okamoto&lt;br/&gt;The perovskite NaOsO_{3} shows a Curie-Weiss metallic nature at high temperature and suddenly goes into an antiferromagnetically insulating state at 410 K on cooling. Electronic specific heat at the low-temperature limit is absent, indicating that the band gap fully opens. In situ observation in ele...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161104] Published Fri Oct 23, 2009</description>
    <dc:creator>Y. G. Shi, Y. F. Guo, S. Yu, M. Arai, A. A. Belik, A. Sato, K. Yamaura, E. Takayama-Muromachi, H. F. Tian, H. X. Yang, J. Q. Li, T. Varga, J. F. Mitchell, and S. Okamoto</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.161104</dc:identifier>
    <dc:source>Phys. Rev. B 80, 161104</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-23T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>161104</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.132406" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Pressure-induced change in the electronic structure of epitaxially strained  La_{1&#8722;x} Sr_{x} MnO_{3}   thin films</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.132406</link>
    <description>Author(s): K. Horiba, A. Maniwa, A. Chikamatsu, K. Yoshimatsu, H. Kumigashira, H. Wadati, A. Fujimori, S. Ueda, H. Yoshikawa, E. Ikenaga, J. J. Kim, K. Kobayashi, and M. Oshima&lt;br/&gt;We report the observation of pressure-induced changes in the electronic structures of La_{1&#8722;x} Sr_{x} MnO_{3} (LSMO) by hard x-ray photoemission spectroscopy. Application of compressive and tensile strains results in the formation of a gap at the Fermi level (E_{F} ) and suppression of spectral we...&lt;br/&gt;[Phys. Rev. B 80, 132406] Published Wed Oct 21, 2009</description>
    <dc:creator>K. Horiba, A. Maniwa, A. Chikamatsu, K. Yoshimatsu, H. Kumigashira, H. Wadati, A. Fujimori, S. Ueda, H. Yoshikawa, E. Ikenaga, J. J. Kim, K. Kobayashi, and M. Oshima</dc:creator>
    <dc:date>2009-10-21T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.132406</dc:identifier>
    <dc:source>Phys. Rev. B 80, 132406</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>13</prism:issueIdentifier>
    <prism:publicationDate>2009-10-21T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>132406</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.134514" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.134514</link>
    <description>Author(s): Madhavi Chand, Archana Mishra, Y. M. Xiong, Anand Kamlapure, S. P. Chockalingam, John Jesudasan, Vivas Bagwe, Mintu Mondal, P. W. Adams, Vikram Tripathi, and Pratap Raychaudhuri&lt;br/&gt;We report the temperature dependence of resistivity (&#961;) and Hall coefficient (R_{H} ) in the normal state of homogeneously disordered epitaxial NbN thin films with k_{F} l&#8764;1.68&#8211;10.12 . The superconducting transition temperature (T_{c} ) of these films varies from 2.7 to 16.8 K. While our least ...&lt;br/&gt;[Phys. Rev. B 80, 134514] Published Tue Oct 20, 2009</description>
    <dc:creator>Madhavi Chand, Archana Mishra, Y. M. Xiong, Anand Kamlapure, S. P. Chockalingam, John Jesudasan, Vivas Bagwe, Mintu Mondal, P. W. Adams, Vikram Tripathi, and Pratap Raychaudhuri</dc:creator>
    <dc:date>2009-10-20T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.134514</dc:identifier>
    <dc:source>Phys. Rev. B 80, 134514</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>13</prism:issueIdentifier>
    <prism:publicationDate>2009-10-20T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>134514</prism:startingPage>
    <dc:subject>Superfluidity and superconductivity</dc:subject>
    <prism:section>Superfluidity and superconductivity</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155441" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Spin stiffness of graphene and zigzag graphene nanoribbons</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155441</link>
    <description>Author(s): Jun-Won Rhim and Kyungsun Moon&lt;br/&gt;We theoretically study the spin stiffness of graphene and graphene nanoribbon based on the Hubbard-type Hamiltonian. Using the Hartree-Fock method with the inclusion of the adiabatic spin twist, we have obtained the effective energy functional and investigated the magnetic excitations of the two-dim...&lt;br/&gt;[Phys. Rev. B 80, 155441] Published Tue Oct 20, 2009</description>
    <dc:creator>Jun-Won Rhim and Kyungsun Moon</dc:creator>
    <dc:date>2009-10-20T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155441</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155441</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-20T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155441</prism:startingPage>
    <dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
    <prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevE.80.045201" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Equivalence between the mobility edge of electronic transport on disorderless networks and the onset of chaos via intermittency in deterministic maps</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevE.80.045201</link>
    <description>Author(s): M. Mart&#237;nez-Mares and A. Robledo&lt;br/&gt;We exhibit a remarkable equivalence between the dynamics of an intermittent nonlinear map and the electronic transport properties (obtained via the scattering matrix) of a crystal defined on a double Cayley tree. This strict analogy reveals in detail the nature of the mobility edge normally studied ...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. E 80, 045201] Published Mon Oct 19, 2009</description>
    <dc:creator>M. Mart&#237;nez-Mares and A. Robledo</dc:creator>
    <dc:date>2009-10-19T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevE.80.045201</dc:identifier>
    <dc:source>Phys. Rev. E 80, 045201</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review E</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>4</prism:issueIdentifier>
    <prism:publicationDate>2009-10-19T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>045201</prism:startingPage>
    <dc:subject>Chaos and pattern formation</dc:subject>
    <prism:section>Chaos and pattern formation</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155432" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>From bare Ge nanowire to Ge/Si core/shell nanowires: A first-principles study</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155432</link>
    <description>Author(s): R. Pek&#246;z and J.-Y. Raty&lt;br/&gt;Germanium/Germanium-Silicon core/shell nanowires are expected to play an important role in future electronic devices. We use first-principles plane-wave calculations within density-functional theory in the generalized gradient approximation to investigate the structural and electronic properties of ...&lt;br/&gt;[Phys. Rev. B 80, 155432] Published Wed Oct 14, 2009</description>
    <dc:creator>R. Pek&#246;z and J.-Y. Raty</dc:creator>
    <dc:date>2009-10-14T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155432</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155432</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-14T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155432</prism:startingPage>
    <dc:subject>Surface physics, nanoscale physics, low-dimensional systems</dc:subject>
    <prism:section>Surface physics, nanoscale physics, low-dimensional systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155119" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Electronic structure of the two-dimensional Heisenberg antiferromagnet VOCl: A multiorbital Mott insulator</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155119</link>
    <description>Author(s): S. Glawion, M. R. Scholz, Y.-Z. Zhang, R. Valent&#237;, T. Saha-Dasgupta, M. Klemm, J. Hemberger, S. Horn, M. Sing, and R. Claessen&lt;br/&gt;We have studied the electronic structure of the two-dimensional Heisenberg antiferromagnet VOCl using photoemission spectroscopy and density-functional theory including local Coulomb repulsion. From calculated exchange integrals and the observed energy dispersions we argue that the degree of one dim...&lt;br/&gt;[Phys. Rev. B 80, 155119] Published Tue Oct 13, 2009</description>
    <dc:creator>S. Glawion, M. R. Scholz, Y.-Z. Zhang, R. Valent&#237;, T. Saha-Dasgupta, M. Klemm, J. Hemberger, S. Horn, M. Sing, and R. Claessen</dc:creator>
    <dc:date>2009-10-13T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155119</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155119</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-13T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155119</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.161102" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Distribution of conductance for Anderson insulators: A theory with a single parameter</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.161102</link>
    <description>Author(s): Andrew Douglas and K. A. Muttalib&lt;br/&gt;We obtain an analytic expression for the full distribution of conductance for a strongly disordered three-dimensional conductor within a perturbative approach based on transfer-matrix formulation. Our results confirm the numerical evidence that the log-normal limit of the distribution is not reached...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161102] Published Tue Oct 13, 2009</description>
    <dc:creator>Andrew Douglas and K. A. Muttalib</dc:creator>
    <dc:date>2009-10-13T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.161102</dc:identifier>
    <dc:source>Phys. Rev. B 80, 161102</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-13T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>161102</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.161302" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Emergent and reentrant fractional quantum Hall effect in trilayer systems in a tilted magnetic field</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.161302</link>
    <description>Author(s): G. M. Gusev, S. Wiedmann, O. E. Raichev, A. K. Bakarov, and J. C. Portal&lt;br/&gt;Magnetotransport measurements in triple-layer electron systems with high carrier density reveal fractional quantum Hall effect at total filling factors &#957;&gt;2 . With an in-plane magnetic field we are able to control the suppression of interlayer tunneling which causes a collapse of the integer quantum ...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161302] Published Tue Oct 13, 2009</description>
    <dc:creator>G. M. Gusev, S. Wiedmann, O. E. Raichev, A. K. Bakarov, and J. C. Portal</dc:creator>
    <dc:date>2009-10-13T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.161302</dc:identifier>
    <dc:source>Phys. Rev. B 80, 161302</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-13T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>161302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165114" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Electronic phase diagram of the layered cobalt oxide system  Li_{x} CoO_{2}    (0.0&#8804;x&#8804;1.0)</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165114</link>
    <description>Author(s): T. Motohashi, T. Ono, Y. Sugimoto, Y. Masubuchi, S. Kikkawa, R. Kanno, M. Karppinen, and H. Yamauchi&lt;br/&gt;Here we report the magnetic properties of the layered cobalt oxide system, Li_{x} CoO_{2} , in the whole range of Li composition, 0&#8804;x&#8804;1 . Based on dc-magnetic-susceptibility data, combined with results of ^{59} Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) observatio...&lt;br/&gt;[Phys. Rev. B 80, 165114] Published Fri Oct 09, 2009</description>
    <dc:creator>T. Motohashi, T. Ono, Y. Sugimoto, Y. Masubuchi, S. Kikkawa, R. Kanno, M. Karppinen, and H. Yamauchi</dc:creator>
    <dc:date>2009-10-09T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165114</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165114</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-09T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165114</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165115" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Nesting between hole and electron pockets in  Ba(Fe_{1&#8722;x} Co_{x} )_{2} As_{2}    (x=0&#8211;0.3)  observed with angle-resolved photoemission</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165115</link>
    <description>Author(s): V. Brouet, M. Marsi, B. Mansart, A. Nicolaou, A. Taleb-Ibrahimi, P. Le F&#232;vre, F. Bertran, F. Rullier-Albenque, A. Forget, and D. Colson&lt;br/&gt;We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of Ba(Fe_{1&#8722;x} Co_{x} )_{2} As_{2} . The wide range of dopings covered by this study, x=0 to x=0.3 , allows to extract systematic features of the electronic structure. We show that there are...&lt;br/&gt;[Phys. Rev. B 80, 165115] Published Fri Oct 09, 2009</description>
    <dc:creator>V. Brouet, M. Marsi, B. Mansart, A. Nicolaou, A. Taleb-Ibrahimi, P. Le F&#232;vre, F. Bertran, F. Rullier-Albenque, A. Forget, and D. Colson</dc:creator>
    <dc:date>2009-10-09T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165115</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165115</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2009-10-09T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165115</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155115" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Valence-band electronic structure of  V_{2} O_{3}  : Identification of V and O bands</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155115</link>
    <description>Author(s): E. Papalazarou, Matteo Gatti, M. Marsi, V. Brouet, F. Iori, Lucia Reining, E. Annese, I. Vobornik, F. Offi, A. Fondacaro, S. Huotari, P. Lacovig, O. Tjernberg, N. B. Brookes, M. Sacchi, P. Metcalf, and G. Panaccione&lt;br/&gt;We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V_{2} O_{3} . The analysis of our experimental results, covering an extended photon energy range (20&#8211;6000 eV) and combined with GW calculations, allows us to...&lt;br/&gt;[Phys. Rev. B 80, 155115] Published Thu Oct 08, 2009</description>
    <dc:creator>E. Papalazarou, Matteo Gatti, M. Marsi, V. Brouet, F. Iori, Lucia Reining, E. Annese, I. Vobornik, F. Offi, A. Fondacaro, S. Huotari, P. Lacovig, O. Tjernberg, N. B. Brookes, M. Sacchi, P. Metcalf, and G. Panaccione</dc:creator>
    <dc:date>2009-10-08T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155115</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155115</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2009-10-08T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155115</prism:startingPage>
    <dc:subject>Electronic structure: wide-band, narrow-band, and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure: wide-band, narrow-band, and strongly correlated systems</prism:section>
  </item>
</rdf:RDF>
