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    <title>Physical Review: Metal-insulator transitions</title>
    <link>http://publish.aps.org/</link>
    <description>Metal-insulator transitions articles published in Physical Review Journals</description>
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    <syn:updateBase>2012-02-09T21:06:13-05:00</syn:updateBase>
    <dc:creator>rss@aps.org</dc:creator>
    <dc:publisher>assocpub@aps.org</dc:publisher>
    <dc:date>2012-02-09T21:06:13-05:00</dc:date>
    <dc:language>en</dc:language>
    <dc:rights>Copyright © 2012 the American Physical Society. Personal use only, all commercial or other reuse prohibited</dc:rights>
    <prism:copyright>Copyright © 2012 the American Physical Society</prism:copyright>
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        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevLett.108.066402"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.075106"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.075104"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevA.85.013642"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.035131"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.014208"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.045324"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevLett.108.055002"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevA.85.013637"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.035124"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.035123"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevLett.108.046803"/>
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        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.020408"/>
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        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.041304"/>
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        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevLett.108.017002"/>
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        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevA.85.011602"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevB.85.035101"/>
        <rdf:li rdf:resource="http://link.aps.org/doi/10.1103/PhysRevA.85.013606"/>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.108.066402">
    <title>Metal-to-Insulator Transition and Electron-Hole Puddle Formation in Disordered Graphene Nanoribbons</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.108.066402</link>
    <description>Author(s): Gerald Schubert and Holger Fehske&lt;br/&gt;&lt;p&gt;The experimentally observed metal-to-insulator transition in hydrogenated graphene is numerically confirmed for actual sized graphene samples and realistic impurity concentrations. The eigenstates of our tight-binding model with substitutional disorder corroborate the formation of electron-hole pudd...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. Lett. 108, 066402] Published Thu Feb 09, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Gerald Schubert and Holger Fehske</p><p> The experimentally observed metal-to-insulator transition in hydrogenated graphene is numerically confirmed for actual sized graphene samples and realistic impurity concentrations. The eigenstates of our tight-binding model with substitutional disorder corroborate the formation of electron-hole pudd...</p><p>[Phys. Rev. Lett. 108, 066402] Published Thu Feb 09, 2012</p>]]></content:encoded>
    <dc:title>Metal-to-Insulator Transition and Electron-Hole Puddle Formation in Disordered Graphene Nanoribbons</dc:title>
    <dc:creator>Gerald Schubert and Holger Fehske</dc:creator>
    <dc:date>2012-02-09T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevLett.108.066402</dc:identifier>
    <dc:source>Phys. Rev. Lett. 108, 066402 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>108</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2012-02-09T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevLett.108.066402</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevLett.108.066402</prism:url>
    <prism:startingPage>066402</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.075106">
    <title>Extended dual description of Mott transition beyond two-dimensional space</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.075106</link>
    <description>Author(s): Yin Zhong, Ke Liu, and Hong-Gang Luo&lt;br/&gt;&lt;p&gt;Motivated by the recent paper of Mross and Senthil [ &lt;a href="http://dx.doi.org/10.1103/PhysRevB.84.165126"&gt; Phys. Rev. B &lt;span style="font-weight: bold;"&gt;84&lt;/span&gt; 165126 (2011)&lt;/a&gt;], which provides a dual description for a Mott transition from a Fermi liquid to a quantum-spin liquid in two space dimensions, we extend their approach to higher-dimensional cases, and we provide explicit formalism ...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 075106] Published Tue Feb 07, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Yin Zhong, Ke Liu, and Hong-Gang Luo</p><p> Motivated by the recent paper of Mross and Senthil [ <a href="http://dx.doi.org/10.1103/PhysRevB.84.165126"> Phys. Rev. B <span style="font-weight: bold;">84</span> 165126 (2011)</a>], which provides a dual description for a Mott transition from a Fermi liquid to a quantum-spin liquid in two space dimensions, we extend their approach to higher-dimensional cases, and we provide explicit formalism ...</p><p>[Phys. Rev. B 85, 075106] Published Tue Feb 07, 2012</p>]]></content:encoded>
    <dc:title>Extended dual description of Mott transition beyond two-dimensional space</dc:title>
    <dc:creator>Yin Zhong, Ke Liu, and Hong-Gang Luo</dc:creator>
    <dc:date>2012-02-07T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.075106</dc:identifier>
    <dc:source>Phys. Rev. B 85, 075106 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>7</prism:number>
    <prism:publicationDate>2012-02-07T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.075106</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.075106</prism:url>
    <prism:startingPage>075106</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.075104">
    <title>Coexisting pseudogap, charge-transfer-gap, and Mott-gap energy scales in the resonant inelastic x-ray scattering spectra of electron-doped cuprate superconductors</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.075104</link>
    <description>Author(s): Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, and A. Bansil&lt;br/&gt;&lt;p&gt;We present a computation of Cu &lt;span&gt;&lt;span style="font-style: italic;"&gt;K&lt;/span&gt;&lt;/span&gt;-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key norma...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 075104] Published Mon Feb 06, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, and A. Bansil</p><p> We present a computation of Cu <span><span style="font-style: italic;">K</span></span>-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key norma...</p><p>[Phys. Rev. B 85, 075104] Published Mon Feb 06, 2012</p>]]></content:encoded>
    <dc:title>Coexisting pseudogap, charge-transfer-gap, and Mott-gap energy scales in the resonant inelastic x-ray scattering spectra of electron-doped cuprate superconductors</dc:title>
    <dc:creator>Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, and A. Bansil</dc:creator>
    <dc:date>2012-02-06T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.075104</dc:identifier>
    <dc:source>Phys. Rev. B 85, 075104 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>7</prism:number>
    <prism:publicationDate>2012-02-06T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.075104</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.075104</prism:url>
    <prism:startingPage>075104</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevA.85.013642">
    <title>Density-wave–supersolid and Mott-insulator–superfluid transitions in the presence of an artificial gauge field: A strong-coupling perturbation approach</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevA.85.013642</link>
    <description>Author(s): Rashi Sachdeva and Sankalpa Ghosh&lt;br/&gt;&lt;p&gt;We study the effect of an artificial gauge field on the zero-temperature phase diagram of an extended Bose-Hubbard model that describes ultracold atoms in optical lattices with long-range interactions by using strong-coupling perturbation theory. We determine analytically the effect of the artificia...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. A 85, 013642] Published Tue Jan 31, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Rashi Sachdeva and Sankalpa Ghosh</p><p> We study the effect of an artificial gauge field on the zero-temperature phase diagram of an extended Bose-Hubbard model that describes ultracold atoms in optical lattices with long-range interactions by using strong-coupling perturbation theory. We determine analytically the effect of the artificia...</p><p>[Phys. Rev. A 85, 013642] Published Tue Jan 31, 2012</p>]]></content:encoded>
    <dc:title>Density-wave–supersolid and Mott-insulator–superfluid transitions in the presence of an artificial gauge field: A strong-coupling perturbation approach</dc:title>
    <dc:creator>Rashi Sachdeva and Sankalpa Ghosh</dc:creator>
    <dc:date>2012-01-31T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevA.85.013642</dc:identifier>
    <dc:source>Phys. Rev. A 85, 013642 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review A</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-31T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevA.85.013642</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevA.85.013642</prism:url>
    <prism:startingPage>013642</prism:startingPage>
    <dc:subject>Matter waves and collective properties of cold atoms and molecules</dc:subject>
    <prism:section>Matter waves and collective properties of cold atoms and molecules</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.035131">
    <title>Polar charge and orbital order in 2H-TaS_{2}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.035131</link>
    <description>Author(s): Jasper van Wezel&lt;br/&gt;&lt;p&gt;It was recently discovered that in spite of the scalar nature of its order parameter, the charge order in &lt;span&gt;1&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;&lt;/span&gt;-TiSe&lt;span&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/span&gt; can be chiral. This is made possible by the emergence of orbital order in conjunction with the charge-density modulations. Here we show that a closely related charge and orbital ordered...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 035131] Published Tue Jan 31, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Jasper van Wezel</p><p> It was recently discovered that in spite of the scalar nature of its order parameter, the charge order in <span>1<span style="font-style: italic;">T</span></span>-TiSe<span><sub>2</sub></span> can be chiral. This is made possible by the emergence of orbital order in conjunction with the charge-density modulations. Here we show that a closely related charge and orbital ordered...</p><p>[Phys. Rev. B 85, 035131] Published Tue Jan 31, 2012</p>]]></content:encoded>
    <dc:title>Polar charge and orbital order in 2H-TaS_{2}</dc:title>
    <dc:creator>Jasper van Wezel</dc:creator>
    <dc:date>2012-01-31T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.035131</dc:identifier>
    <dc:source>Phys. Rev. B 85, 035131 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>3</prism:number>
    <prism:publicationDate>2012-01-31T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.035131</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.035131</prism:url>
    <prism:startingPage>035131</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.014208">
    <title>Observation of a first-order metal-to-nonmetal phase transition in fluid iron</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.014208</link>
    <description>Author(s): V. N. Korobenko and A. D. Rakhel&lt;br/&gt;&lt;p&gt;Measurements of electrical resistivity and caloric equation of state have been performed for fluid iron to investigate the metal-to-nonmetal transition induced by thermal expansion. The resistivity results published earlier [V. N. Korobenko and A. D. Rakhel,  &lt;a href="http://dx.doi.org/10.1134/S1063776111020178"&gt; JETP &lt;span style="font-weight: bold;"&gt;112&lt;/span&gt; 649 (2011)&lt;/a&gt;] have revealed the ...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 014208] Published Mon Jan 30, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): V. N. Korobenko and A. D. Rakhel</p><p> Measurements of electrical resistivity and caloric equation of state have been performed for fluid iron to investigate the metal-to-nonmetal transition induced by thermal expansion. The resistivity results published earlier [V. N. Korobenko and A. D. Rakhel,  <a href="http://dx.doi.org/10.1134/S1063776111020178"> JETP <span style="font-weight: bold;">112</span> 649 (2011)</a>] have revealed the ...</p><p>[Phys. Rev. B 85, 014208] Published Mon Jan 30, 2012</p>]]></content:encoded>
    <dc:title>Observation of a first-order metal-to-nonmetal phase transition in fluid iron</dc:title>
    <dc:creator>V. N. Korobenko and A. D. Rakhel</dc:creator>
    <dc:date>2012-01-30T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.014208</dc:identifier>
    <dc:source>Phys. Rev. B 85, 014208 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-30T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.014208</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.014208</prism:url>
    <prism:startingPage>014208</prism:startingPage>
    <dc:subject>Inhomogeneous, disordered, and partially ordered systems</dc:subject>
    <prism:section>Inhomogeneous, disordered, and partially ordered systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045324">
    <title>Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO_{2}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045324</link>
    <description>Author(s): Shimeng Yu, Rakesh Jeyasingh, Yi Wu, and H.-S. Philip Wong&lt;br/&gt;&lt;p&gt;Low-frequency noise measurements were performed on HfO&lt;span&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/span&gt;-based bipolar resistive switching memory devices. A 1/&lt;span&gt;&lt;span style="font-style: italic;"&gt;f&lt;/span&gt;&lt;sup&gt;&lt;span style="font-style: italic;"&gt;α&lt;/span&gt;&lt;/sup&gt;&lt;/span&gt; DC noise power spectral density was observed with α ∼ 1 for a low resistance state and α ∼ 2 for a high resistance state. We developed an electron tunneling model to elucidate the conduct...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045324] Published Mon Jan 30, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Shimeng Yu, Rakesh Jeyasingh, Yi Wu, and H.-S. Philip Wong</p><p> Low-frequency noise measurements were performed on HfO<span><sub>2</sub></span>-based bipolar resistive switching memory devices. A 1/<span><span style="font-style: italic;">f</span><sup><span style="font-style: italic;">α</span></sup></span> DC noise power spectral density was observed with α ∼ 1 for a low resistance state and α ∼ 2 for a high resistance state. We developed an electron tunneling model to elucidate the conduct...</p><p>[Phys. Rev. B 85, 045324] Published Mon Jan 30, 2012</p>]]></content:encoded>
    <dc:title>Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO_{2}</dc:title>
    <dc:creator>Shimeng Yu, Rakesh Jeyasingh, Yi Wu, and H.-S. Philip Wong</dc:creator>
    <dc:date>2012-01-30T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045324</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045324 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-30T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045324</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045324</prism:url>
    <prism:startingPage>045324</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.108.055002">
    <title>X-Ray Diagnosis of the Pressure Induced Mott Nonmetal-Metal Transition</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.108.055002</link>
    <description>Author(s): A. Lévy, F. Dorchies, A. Benuzzi-Mounaix, A. Ravasio, F. Festa, V. Recoules, O. Peyrusse, N. Amadou, E. Brambrink, T. Hall, M. Koenig, and S. Mazevet&lt;br/&gt;&lt;p&gt;The evolution of the &lt;span&gt;&lt;span style="font-style: italic;"&gt;K&lt;/span&gt;&lt;/span&gt;-edge x-ray absorption near-edge spectroscopy (XANES) spectrum is investigated for an aluminum plasma expanding from the solid density down to &lt;span&gt;0.5  g/cm&lt;sup&gt;3&lt;/sup&gt;&lt;/span&gt;, with temperatures lying from 5 down to 2 eV. The dense plasma is generated by nanosecond laser-induced shock compression. T...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. Lett. 108, 055002] Published Mon Jan 30, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): A. Lévy, F. Dorchies, A. Benuzzi-Mounaix, A. Ravasio, F. Festa, V. Recoules, O. Peyrusse, N. Amadou, E. Brambrink, T. Hall, M. Koenig, and S. Mazevet</p><p> The evolution of the <span><span style="font-style: italic;">K</span></span>-edge x-ray absorption near-edge spectroscopy (XANES) spectrum is investigated for an aluminum plasma expanding from the solid density down to <span>0.5  g/cm<sup>3</sup></span>, with temperatures lying from 5 down to 2 eV. The dense plasma is generated by nanosecond laser-induced shock compression. T...</p><p>[Phys. Rev. Lett. 108, 055002] Published Mon Jan 30, 2012</p>]]></content:encoded>
    <dc:title>X-Ray Diagnosis of the Pressure Induced Mott Nonmetal-Metal Transition</dc:title>
    <dc:creator>A. Lévy, F. Dorchies, A. Benuzzi-Mounaix, A. Ravasio, F. Festa, V. Recoules, O. Peyrusse, N. Amadou, E. Brambrink, T. Hall, M. Koenig, and S. Mazevet</dc:creator>
    <dc:date>2012-01-30T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevLett.108.055002</dc:identifier>
    <dc:source>Phys. Rev. Lett. 108, 055002 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>108</prism:volume>
    <prism:number>5</prism:number>
    <prism:publicationDate>2012-01-30T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevLett.108.055002</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevLett.108.055002</prism:url>
    <prism:startingPage>055002</prism:startingPage>
    <dc:subject>Plasma and Beam Physics</dc:subject>
    <prism:section>Plasma and Beam Physics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevA.85.013637">
    <title>Strong thermalization of the two-component Bose-Hubbard model at finite temperatures</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevA.85.013637</link>
    <description>Author(s): J. M. Zhang, C. Shen, and W. M. Liu&lt;br/&gt;&lt;p&gt;We study thermalization of a two-component Bose-Hubbard model by exact diagonalization. Initially, the two components do not interact and are both at equilibrium but with different temperatures. As the onsite intercomponent interaction is turned on, perfect thermalization occurs. Remarkably, not mer...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. A 85, 013637] Published Fri Jan 27, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): J. M. Zhang, C. Shen, and W. M. Liu</p><p> We study thermalization of a two-component Bose-Hubbard model by exact diagonalization. Initially, the two components do not interact and are both at equilibrium but with different temperatures. As the onsite intercomponent interaction is turned on, perfect thermalization occurs. Remarkably, not mer...</p><p>[Phys. Rev. A 85, 013637] Published Fri Jan 27, 2012</p>]]></content:encoded>
    <dc:title>Strong thermalization of the two-component Bose-Hubbard model at finite temperatures</dc:title>
    <dc:creator>J. M. Zhang, C. Shen, and W. M. Liu</dc:creator>
    <dc:date>2012-01-27T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevA.85.013637</dc:identifier>
    <dc:source>Phys. Rev. A 85, 013637 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review A</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-27T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevA.85.013637</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevA.85.013637</prism:url>
    <prism:startingPage>013637</prism:startingPage>
    <dc:subject>Matter waves and collective properties of cold atoms and molecules</dc:subject>
    <prism:section>Matter waves and collective properties of cold atoms and molecules</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.035124">
    <title>Orbital-order melting in rare-earth manganites: Role of superexchange</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.035124</link>
    <description>Author(s): Andreas Flesch, Guoren Zhang, Erik Koch, and Eva Pavarini&lt;br/&gt;&lt;p&gt;We study the mechanism of orbital-order melting observed at temperature &lt;span&gt;&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;&lt;sub&gt;OO&lt;/sub&gt;&lt;/span&gt; in the series of rare-earth manganites. We find that the purely electronic many-body super-exchange mechanism yields a transition temperature &lt;span&gt;&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;&lt;sub&gt;KK&lt;/sub&gt;&lt;/span&gt; that decreases with decreasing rare-earth radius and increases with pressure, ...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 035124] Published Thu Jan 26, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Andreas Flesch, Guoren Zhang, Erik Koch, and Eva Pavarini</p><p> We study the mechanism of orbital-order melting observed at temperature <span><span style="font-style: italic;">T</span><sub>OO</sub></span> in the series of rare-earth manganites. We find that the purely electronic many-body super-exchange mechanism yields a transition temperature <span><span style="font-style: italic;">T</span><sub>KK</sub></span> that decreases with decreasing rare-earth radius and increases with pressure, ...</p><p>[Phys. Rev. B 85, 035124] Published Thu Jan 26, 2012</p>]]></content:encoded>
    <dc:title>Orbital-order melting in rare-earth manganites: Role of superexchange</dc:title>
    <dc:creator>Andreas Flesch, Guoren Zhang, Erik Koch, and Eva Pavarini</dc:creator>
    <dc:date>2012-01-26T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.035124</dc:identifier>
    <dc:source>Phys. Rev. B 85, 035124 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>3</prism:number>
    <prism:publicationDate>2012-01-26T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.035124</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.035124</prism:url>
    <prism:startingPage>035124</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.035123">
    <title>General mechanism for orbital selective phase transitions</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.035123</link>
    <description>Author(s): Yu-Zhong Zhang, Hunpyo Lee, Hai-Qing Lin, Chang-Qin Wu, Harald O. Jeschke, and Roser Valentí&lt;br/&gt;&lt;p&gt;Based on the analysis of a two-orbital Hubbard model within a mean-field approach, we propose a mechanism for an orbital selective phase transition (OSPT) where coexistence of localized and itinerant electrons can be realized. We show that this OSPT exists both at and near half-filling even in the a...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 035123] Published Thu Jan 26, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Yu-Zhong Zhang, Hunpyo Lee, Hai-Qing Lin, Chang-Qin Wu, Harald O. Jeschke, and Roser Valentí</p><p> Based on the analysis of a two-orbital Hubbard model within a mean-field approach, we propose a mechanism for an orbital selective phase transition (OSPT) where coexistence of localized and itinerant electrons can be realized. We show that this OSPT exists both at and near half-filling even in the a...</p><p>[Phys. Rev. B 85, 035123] Published Thu Jan 26, 2012</p>]]></content:encoded>
    <dc:title>General mechanism for orbital selective phase transitions</dc:title>
    <dc:creator>Yu-Zhong Zhang, Hunpyo Lee, Hai-Qing Lin, Chang-Qin Wu, Harald O. Jeschke, and Roser Valentí</dc:creator>
    <dc:date>2012-01-26T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.035123</dc:identifier>
    <dc:source>Phys. Rev. B 85, 035123 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>3</prism:number>
    <prism:publicationDate>2012-01-26T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.035123</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.035123</prism:url>
    <prism:startingPage>035123</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.108.046803">
    <title>Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.108.046803</link>
    <description>Author(s): G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen, M. Blaauboer, M. J. Calderón, R. Aguado, and S. Rogge&lt;br/&gt;&lt;p&gt;Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from ...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. Lett. 108, 046803] Published Wed Jan 25, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen, M. Blaauboer, M. J. Calderón, R. Aguado, and S. Rogge</p><p> Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from ...</p><p>[Phys. Rev. Lett. 108, 046803] Published Wed Jan 25, 2012</p>]]></content:encoded>
    <dc:title>Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor</dc:title>
    <dc:creator>G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen, M. Blaauboer, M. J. Calderón, R. Aguado, and S. Rogge</dc:creator>
    <dc:date>2012-01-25T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevLett.108.046803</dc:identifier>
    <dc:source>Phys. Rev. Lett. 108, 046803 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>108</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-25T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevLett.108.046803</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevLett.108.046803</prism:url>
    <prism:startingPage>046803</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045127">
    <title>Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole-doped manganite</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045127</link>
    <description>Author(s): Sudeshna Samanta, A. K. Raychaudhuri, and Ya. M. Mukhovskii&lt;br/&gt;&lt;p&gt;We report the observation of a large &lt;span&gt;1/&lt;span style="font-style: italic;"&gt;f&lt;/span&gt;&lt;/span&gt; noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of &lt;span&gt;La&lt;sub&gt;0.80&lt;/sub&gt;Ca&lt;sub&gt;0.20&lt;/sub&gt;MnO&lt;sub&gt;3&lt;/sub&gt;&lt;/span&gt;, which manifests hopping conductivity in the presence of a Coulomb gap. The temperature-dependent noise magnitude decreases in the FMI state indicat...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045127] Published Wed Jan 25, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Sudeshna Samanta, A. K. Raychaudhuri, and Ya. M. Mukhovskii</p><p> We report the observation of a large <span>1/<span style="font-style: italic;">f</span></span> noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of <span>La<sub>0.80</sub>Ca<sub>0.20</sub>MnO<sub>3</sub></span>, which manifests hopping conductivity in the presence of a Coulomb gap. The temperature-dependent noise magnitude decreases in the FMI state indicat...</p><p>[Phys. Rev. B 85, 045127] Published Wed Jan 25, 2012</p>]]></content:encoded>
    <dc:title>Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole-doped manganite</dc:title>
    <dc:creator>Sudeshna Samanta, A. K. Raychaudhuri, and Ya. M. Mukhovskii</dc:creator>
    <dc:date>2012-01-25T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045127</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045127 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-25T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045127</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045127</prism:url>
    <prism:startingPage>045127</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045128">
    <title>Imaging of 3d Mn orbitals in the ferromagnetic state for Ca-substituted manganite: Magnetic Compton investigation</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045128</link>
    <description>Author(s): Christopher Rumble, M. Itou, N. Hiraoka, Y. Sakurai, Y. Tomioka, Y. Tokura, James E. Penner-Hahn, and Aniruddha Deb&lt;br/&gt;&lt;p&gt;The 3&lt;span&gt;&lt;span style="font-style: italic;"&gt;d&lt;/span&gt;&lt;/span&gt; Mn orbitals in Pr&lt;span&gt;&lt;sub&gt;0.25&lt;/sub&gt;&lt;/span&gt;Ca&lt;span&gt;&lt;sub&gt;0.25&lt;/sub&gt;&lt;/span&gt;MnO&lt;span&gt;&lt;sub&gt;3&lt;/sub&gt;&lt;/span&gt; (PCMO), in the ferromagnetic phase, were imaged by two-dimensional reconstruction of spin-polarized electron-momentum density projected along the [100] and [110] principal directions. The results were analyzed using a molecular-orbital scheme to understand the ...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045128] Published Wed Jan 25, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Christopher Rumble, M. Itou, N. Hiraoka, Y. Sakurai, Y. Tomioka, Y. Tokura, James E. Penner-Hahn, and Aniruddha Deb</p><p> The 3<span><span style="font-style: italic;">d</span></span> Mn orbitals in Pr<span><sub>0.25</sub></span>Ca<span><sub>0.25</sub></span>MnO<span><sub>3</sub></span> (PCMO), in the ferromagnetic phase, were imaged by two-dimensional reconstruction of spin-polarized electron-momentum density projected along the [100] and [110] principal directions. The results were analyzed using a molecular-orbital scheme to understand the ...</p><p>[Phys. Rev. B 85, 045128] Published Wed Jan 25, 2012</p>]]></content:encoded>
    <dc:title>Imaging of 3d Mn orbitals in the ferromagnetic state for Ca-substituted manganite: Magnetic Compton investigation</dc:title>
    <dc:creator>Christopher Rumble, M. Itou, N. Hiraoka, Y. Sakurai, Y. Tomioka, Y. Tokura, James E. Penner-Hahn, and Aniruddha Deb</dc:creator>
    <dc:date>2012-01-25T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045128</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045128 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-25T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045128</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045128</prism:url>
    <prism:startingPage>045128</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.020408">
    <title>First-principles study of the electronic structure and magnetism of CaIrO_{3}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.020408</link>
    <description>Author(s): Alaska Subedi&lt;br/&gt;&lt;p&gt;I study the electronic structure and magnetism of postperovskite CaIrO&lt;span&gt;&lt;sub&gt;3&lt;/sub&gt;&lt;/span&gt; using first-principles calculations. The density functional calculations within the local density approximation without the combined effect of spin-orbit coupling and on-site Coulomb repulsion show the system to be metallic, whi...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt; &lt;br/&gt;[Phys. Rev. B 85, 020408] Published Wed Jan 25, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Alaska Subedi</p><p><img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/>  I study the electronic structure and magnetism of postperovskite CaIrO<span><sub>3</sub></span> using first-principles calculations. The density functional calculations within the local density approximation without the combined effect of spin-orbit coupling and on-site Coulomb repulsion show the system to be metallic, whi...</p><p>[Phys. Rev. B 85, 020408] Published Wed Jan 25, 2012</p>]]></content:encoded>
    <dc:title>First-principles study of the electronic structure and magnetism of CaIrO_{3}</dc:title>
    <dc:creator>Alaska Subedi</dc:creator>
    <dc:date>2012-01-25T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.020408</dc:identifier>
    <dc:source>Phys. Rev. B 85, 020408 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>2</prism:number>
    <prism:publicationDate>2012-01-25T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.020408</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.020408</prism:url>
    <prism:startingPage>020408</prism:startingPage>
    <dc:subject>Magnetism</dc:subject>
    <prism:section>Magnetism</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.035115">
    <title>Dynamical screening effects in correlated materials: Plasmon satellites and spectral weight transfers from a Green's function ansatz to extended dynamical mean field theory</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.035115</link>
    <description>Author(s): Michele Casula, Alexey Rubtsov, and Silke Biermann&lt;br/&gt;&lt;p&gt;Dynamical screening of the Coulomb interactions in correlated electron systems results in a low-energy effective problem with a dynamical Hubbard interaction &lt;span&gt;&lt;span style="font-family: brush script mt italic;"&gt;U&lt;/span&gt;(&lt;span style="font-style: italic;"&gt;ω&lt;/span&gt;)&lt;/span&gt;. We propose a Green's function ansatz for the Anderson impurity problem with retarded interactions, in which the Green's function factori...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 035115] Published Wed Jan 18, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Michele Casula, Alexey Rubtsov, and Silke Biermann</p><p> Dynamical screening of the Coulomb interactions in correlated electron systems results in a low-energy effective problem with a dynamical Hubbard interaction <span><span style="font-family: brush script mt italic;">U</span>(<span style="font-style: italic;">ω</span>)</span>. We propose a Green's function ansatz for the Anderson impurity problem with retarded interactions, in which the Green's function factori...</p><p>[Phys. Rev. B 85, 035115] Published Wed Jan 18, 2012</p>]]></content:encoded>
    <dc:title>Dynamical screening effects in correlated materials: Plasmon satellites and spectral weight transfers from a Green's function ansatz to extended dynamical mean field theory</dc:title>
    <dc:creator>Michele Casula, Alexey Rubtsov, and Silke Biermann</dc:creator>
    <dc:date>2012-01-18T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.035115</dc:identifier>
    <dc:source>Phys. Rev. B 85, 035115 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>3</prism:number>
    <prism:publicationDate>2012-01-18T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.035115</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.035115</prism:url>
    <prism:startingPage>035115</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.041304">
    <title>Nonactivated transport of ultradilute two-dimensional hole systems in GaAs field-effect transistors: Interaction versus disorder</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.041304</link>
    <description>Author(s): Jian Huang, L. N. Pfeiffer, and K. W. West&lt;br/&gt;&lt;p&gt;Very strongly interacting high-purity two-dimensional (2D) electron systems at temperatures &lt;span&gt;&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;→0&lt;/span&gt; demonstrate certain nonactivated insulating behaviors that are absent in more disordered systems. By measuring in dark the &lt;span&gt;&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;&lt;/span&gt; dependence of the conductivity of ultrahigh-quality 2D holes with charge densit...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt; &lt;br/&gt;[Phys. Rev. B 85, 041304] Published Tue Jan 17, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Jian Huang, L. N. Pfeiffer, and K. W. West</p><p><img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/>  Very strongly interacting high-purity two-dimensional (2D) electron systems at temperatures <span><span style="font-style: italic;">T</span>→0</span> demonstrate certain nonactivated insulating behaviors that are absent in more disordered systems. By measuring in dark the <span><span style="font-style: italic;">T</span></span> dependence of the conductivity of ultrahigh-quality 2D holes with charge densit...</p><p>[Phys. Rev. B 85, 041304] Published Tue Jan 17, 2012</p>]]></content:encoded>
    <dc:title>Nonactivated transport of ultradilute two-dimensional hole systems in GaAs field-effect transistors: Interaction versus disorder</dc:title>
    <dc:creator>Jian Huang, L. N. Pfeiffer, and K. W. West</dc:creator>
    <dc:date>2012-01-17T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.041304</dc:identifier>
    <dc:source>Phys. Rev. B 85, 041304 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-17T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.041304</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.041304</prism:url>
    <prism:startingPage>041304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.108.026403">
    <title>Experimental and Theoretical Evidence for Pressure-Induced Metallization in FeO with Rocksalt-Type Structure</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.108.026403</link>
    <description>Author(s): Kenji Ohta, R. E. Cohen, Kei Hirose, Kristjan Haule, Katsuya Shimizu, and Yasuo Ohishi&lt;br/&gt;&lt;p&gt;Electrical conductivity of FeO was measured up to 141 GPa and 2480 K in a laser-heated diamond-anvil cell. The results show that rock-salt (B1) type structured FeO metallizes at around 70 GPa and 1900 K without any structural phase transition. We computed fully self-consistently the electronic struc...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/physics_viewpoint.gif" alt="Selected for a Synopsis in Physics"/&gt; &lt;br/&gt;[Phys. Rev. Lett. 108, 026403] Published Thu Jan 12, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Kenji Ohta, R. E. Cohen, Kei Hirose, Kristjan Haule, Katsuya Shimizu, and Yasuo Ohishi</p><p><img src="http://publish.aps.org/images/icons/physics_viewpoint.gif" alt="Selected for a Synopsis in Physics"/>  Electrical conductivity of FeO was measured up to 141 GPa and 2480 K in a laser-heated diamond-anvil cell. The results show that rock-salt (B1) type structured FeO metallizes at around 70 GPa and 1900 K without any structural phase transition. We computed fully self-consistently the electronic struc...</p><p>[Phys. Rev. Lett. 108, 026403] Published Thu Jan 12, 2012</p>]]></content:encoded>
    <dc:title>Experimental and Theoretical Evidence for Pressure-Induced Metallization in FeO with Rocksalt-Type Structure</dc:title>
    <dc:creator>Kenji Ohta, R. E. Cohen, Kei Hirose, Kristjan Haule, Katsuya Shimizu, and Yasuo Ohishi</dc:creator>
    <dc:date>2012-01-12T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevLett.108.026403</dc:identifier>
    <dc:source>Phys. Rev. Lett. 108, 026403 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>108</prism:volume>
    <prism:number>2</prism:number>
    <prism:publicationDate>2012-01-12T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevLett.108.026403</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevLett.108.026403</prism:url>
    <prism:startingPage>026403</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045111">
    <title>Pressure-induced metal-insulator and spin-state transition in low-valence layered nickelates</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045111</link>
    <description>Author(s): Victor Pardo and Warren E. Pickett&lt;br/&gt;&lt;p&gt;&lt;span style="font-style: italic;"&gt;Ab initio&lt;/span&gt; calculations predict a metal-insulator transition at zero temperature to occur in La&lt;span&gt;&lt;sub&gt;4&lt;/sub&gt;&lt;/span&gt;Ni&lt;span&gt;&lt;sub&gt;3&lt;/sub&gt;&lt;/span&gt;O&lt;span&gt;&lt;sub&gt;8&lt;/sub&gt;&lt;/span&gt; at moderate pressures as a result of a pressure-induced spin-state transition. The spin-state transition that is seen at 105 K at ambient pressure, from a low-temperature high-spin state to a high-te...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045111] Published Thu Jan 12, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Victor Pardo and Warren E. Pickett</p><p> <span style="font-style: italic;">Ab initio</span> calculations predict a metal-insulator transition at zero temperature to occur in La<span><sub>4</sub></span>Ni<span><sub>3</sub></span>O<span><sub>8</sub></span> at moderate pressures as a result of a pressure-induced spin-state transition. The spin-state transition that is seen at 105 K at ambient pressure, from a low-temperature high-spin state to a high-te...</p><p>[Phys. Rev. B 85, 045111] Published Thu Jan 12, 2012</p>]]></content:encoded>
    <dc:title>Pressure-induced metal-insulator and spin-state transition in low-valence layered nickelates</dc:title>
    <dc:creator>Victor Pardo and Warren E. Pickett</dc:creator>
    <dc:date>2012-01-12T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045111</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045111 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-12T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045111</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045111</prism:url>
    <prism:startingPage>045111</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045109">
    <title>Monoclinic M_{1} phase of VO_{2}: Mott-Hubbard versus band insulator</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045109</link>
    <description>Author(s): A. S. Belozerov, M. A. Korotin, V. I. Anisimov, and A. I. Poteryaev&lt;br/&gt;&lt;p&gt;We revisit the problem of the insulating ground state of the monoclinic &lt;span&gt;&lt;span style="font-style: italic;"&gt;M&lt;/span&gt;&lt;sub&gt;1&lt;/sub&gt;&lt;/span&gt; phase in vanadium dioxide and argue that essential intersite correlation effects within vanadium dimers can be captured by the static mean-field approximation. We propose the LDA + DMFT +&lt;span&gt;&lt;span style="font-style: italic;"&gt;V&lt;/span&gt;&lt;/span&gt; approach, which combines the density...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045109] Published Thu Jan 12, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): A. S. Belozerov, M. A. Korotin, V. I. Anisimov, and A. I. Poteryaev</p><p> We revisit the problem of the insulating ground state of the monoclinic <span><span style="font-style: italic;">M</span><sub>1</sub></span> phase in vanadium dioxide and argue that essential intersite correlation effects within vanadium dimers can be captured by the static mean-field approximation. We propose the LDA + DMFT +<span><span style="font-style: italic;">V</span></span> approach, which combines the density...</p><p>[Phys. Rev. B 85, 045109] Published Thu Jan 12, 2012</p>]]></content:encoded>
    <dc:title>Monoclinic M_{1} phase of VO_{2}: Mott-Hubbard versus band insulator</dc:title>
    <dc:creator>A. S. Belozerov, M. A. Korotin, V. I. Anisimov, and A. I. Poteryaev</dc:creator>
    <dc:date>2012-01-12T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045109</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045109 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-12T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045109</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045109</prism:url>
    <prism:startingPage>045109</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045112">
    <title>First-order metal-to-metal phase transition and non-Fermi-liquid behavior in a two-dimensional Mott insulating layer adsorbed on a metal substrate</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045112</link>
    <description>Author(s): H. Ishida and A. Liebsch&lt;br/&gt;&lt;p&gt;The electronic structure of a two-dimensional Mott insulating layer in contact with a semi-infinite metal substrate is studied within cluster dynamical mean field theory. For this purpose, the overlayer forming a square lattice is divided into an array of (&lt;span&gt;2×2&lt;/span&gt;)-site clusters in which interatomic ele...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045112] Published Thu Jan 12, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): H. Ishida and A. Liebsch</p><p> The electronic structure of a two-dimensional Mott insulating layer in contact with a semi-infinite metal substrate is studied within cluster dynamical mean field theory. For this purpose, the overlayer forming a square lattice is divided into an array of (<span>2×2</span>)-site clusters in which interatomic ele...</p><p>[Phys. Rev. B 85, 045112] Published Thu Jan 12, 2012</p>]]></content:encoded>
    <dc:title>First-order metal-to-metal phase transition and non-Fermi-liquid behavior in a two-dimensional Mott insulating layer adsorbed on a metal substrate</dc:title>
    <dc:creator>H. Ishida and A. Liebsch</dc:creator>
    <dc:date>2012-01-12T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045112</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045112 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-12T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045112</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045112</prism:url>
    <prism:startingPage>045112</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.108.026401">
    <title>Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.108.026401</link>
    <description>Author(s): Elif Ertekin, Mark T. Winkler, Daniel Recht, Aurore J. Said, Michael J. Aziz, Tonio Buonassisi, and Jeffrey C. Grossman&lt;br/&gt;&lt;p&gt;Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub–band-gap optical absorption...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. Lett. 108, 026401] Published Wed Jan 11, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Elif Ertekin, Mark T. Winkler, Daniel Recht, Aurore J. Said, Michael J. Aziz, Tonio Buonassisi, and Jeffrey C. Grossman</p><p> Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub–band-gap optical absorption...</p><p>[Phys. Rev. Lett. 108, 026401] Published Wed Jan 11, 2012</p>]]></content:encoded>
    <dc:title>Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin</dc:title>
    <dc:creator>Elif Ertekin, Mark T. Winkler, Daniel Recht, Aurore J. Said, Michael J. Aziz, Tonio Buonassisi, and Jeffrey C. Grossman</dc:creator>
    <dc:date>2012-01-11T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevLett.108.026401</dc:identifier>
    <dc:source>Phys. Rev. Lett. 108, 026401 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>108</prism:volume>
    <prism:number>2</prism:number>
    <prism:publicationDate>2012-01-11T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevLett.108.026401</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevLett.108.026401</prism:url>
    <prism:startingPage>026401</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.041201">
    <title>Orbital, charge, and spin couplings in Ru_{2}^{5+}O_{9} dimers of Ba_{3}CoRu_{2}O_{9}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.041201</link>
    <description>Author(s): H. D. Zhou, A. Kiswandhi, Y. Barlas, J. S. Brooks, T. Siegrist, G. Li, L. Balicas, J. G. Cheng, and F. Rivadulla&lt;br/&gt;&lt;p&gt;The magnetic, transport, and structural properties of cold-pressed Ba&lt;span&gt;&lt;sub&gt;3&lt;/sub&gt;&lt;/span&gt;CoRu&lt;span&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/span&gt;O&lt;span&gt;&lt;sub&gt;9&lt;/sub&gt;&lt;/span&gt; show (i) an antiferromagnetic transition, (ii) a semiconductor-semiconductor electronic transition where the resistivity is dominated by the electron hopping between the Ru&lt;span&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;sup&gt;5+&lt;/sup&gt;&lt;/span&gt;O&lt;span&gt;&lt;sub&gt;9&lt;/sub&gt;&lt;/span&gt; dimers with itinerant Ru electrons at high t...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt; &lt;br/&gt;[Phys. Rev. B 85, 041201] Published Mon Jan 09, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): H. D. Zhou, A. Kiswandhi, Y. Barlas, J. S. Brooks, T. Siegrist, G. Li, L. Balicas, J. G. Cheng, and F. Rivadulla</p><p><img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/>  The magnetic, transport, and structural properties of cold-pressed Ba<span><sub>3</sub></span>CoRu<span><sub>2</sub></span>O<span><sub>9</sub></span> show (i) an antiferromagnetic transition, (ii) a semiconductor-semiconductor electronic transition where the resistivity is dominated by the electron hopping between the Ru<span><sub>2</sub><sup>5+</sup></span>O<span><sub>9</sub></span> dimers with itinerant Ru electrons at high t...</p><p>[Phys. Rev. B 85, 041201] Published Mon Jan 09, 2012</p>]]></content:encoded>
    <dc:title>Orbital, charge, and spin couplings in Ru_{2}^{5+}O_{9} dimers of Ba_{3}CoRu_{2}O_{9}</dc:title>
    <dc:creator>H. D. Zhou, A. Kiswandhi, Y. Barlas, J. S. Brooks, T. Siegrist, G. Li, L. Balicas, J. G. Cheng, and F. Rivadulla</dc:creator>
    <dc:date>2012-01-09T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.041201</dc:identifier>
    <dc:source>Phys. Rev. B 85, 041201 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-09T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.041201</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.041201</prism:url>
    <prism:startingPage>041201</prism:startingPage>
    <dc:subject>Semiconductors I: bulk</dc:subject>
    <prism:section>Semiconductors I: bulk</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevA.85.011603">
    <title>Exact localized eigenstates for an extended Bose-Hubbard model with pair-correlated hopping</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevA.85.011603</link>
    <description>Author(s): Peter Jason and Magnus Johansson&lt;br/&gt;&lt;p&gt;We show that a Bose-Hubbard model extended with pair-correlated hopping has exact eigenstates, &lt;span style="font-style: italic;"&gt;quantum lattice compactons&lt;/span&gt;, with complete single-site localization. These appear at parameter values where the one-particle tunneling is exactly canceled by nonlocal pair correlations, and correspond in a ...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt; &lt;br/&gt;[Phys. Rev. A 85, 011603] Published Thu Jan 05, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Peter Jason and Magnus Johansson</p><p><img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/>  We show that a Bose-Hubbard model extended with pair-correlated hopping has exact eigenstates, <span style="font-style: italic;">quantum lattice compactons</span>, with complete single-site localization. These appear at parameter values where the one-particle tunneling is exactly canceled by nonlocal pair correlations, and correspond in a ...</p><p>[Phys. Rev. A 85, 011603] Published Thu Jan 05, 2012</p>]]></content:encoded>
    <dc:title>Exact localized eigenstates for an extended Bose-Hubbard model with pair-correlated hopping</dc:title>
    <dc:creator>Peter Jason and Magnus Johansson</dc:creator>
    <dc:date>2012-01-05T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevA.85.011603</dc:identifier>
    <dc:source>Phys. Rev. A 85, 011603 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review A</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-05T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevA.85.011603</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevA.85.011603</prism:url>
    <prism:startingPage>011603</prism:startingPage>
    <dc:subject>Matter waves and collective properties of cold atoms and molecules</dc:subject>
    <prism:section>Matter waves and collective properties of cold atoms and molecules</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevLett.108.017002">
    <title>Enhancement of the Critical Temperature of Superconductors by Anderson Localization</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevLett.108.017002</link>
    <description>Author(s): I. S. Burmistrov, I. V. Gornyi, and A. D. Mirlin&lt;br/&gt;&lt;p&gt;The influence of disorder on the temperature of superconducting transition (&lt;span&gt;&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;&lt;sub&gt;&lt;span style="font-style: italic;"&gt;c&lt;/span&gt;&lt;/sub&gt;&lt;/span&gt;) is studied within the &lt;span&gt;&lt;span style="font-style: italic;"&gt;σ&lt;/span&gt;&lt;/span&gt;-model renormalization-group framework. Electron-electron interaction in particle-hole and Cooper channels is taken into account and assumed to be short range. Two-dimensional systems in the weak l...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. Lett. 108, 017002] Published Thu Jan 05, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): I. S. Burmistrov, I. V. Gornyi, and A. D. Mirlin</p><p> The influence of disorder on the temperature of superconducting transition (<span><span style="font-style: italic;">T</span><sub><span style="font-style: italic;">c</span></sub></span>) is studied within the <span><span style="font-style: italic;">σ</span></span>-model renormalization-group framework. Electron-electron interaction in particle-hole and Cooper channels is taken into account and assumed to be short range. Two-dimensional systems in the weak l...</p><p>[Phys. Rev. Lett. 108, 017002] Published Thu Jan 05, 2012</p>]]></content:encoded>
    <dc:title>Enhancement of the Critical Temperature of Superconductors by Anderson Localization</dc:title>
    <dc:creator>I. S. Burmistrov, I. V. Gornyi, and A. D. Mirlin</dc:creator>
    <dc:date>2012-01-05T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevLett.108.017002</dc:identifier>
    <dc:source>Phys. Rev. Lett. 108, 017002 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review Letters</prism:publicationName>
    <prism:volume>108</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-05T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevLett.108.017002</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevLett.108.017002</prism:url>
    <prism:startingPage>017002</prism:startingPage>
    <dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
    <prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.045102">
    <title>Stability of Ni sites across the pressure-induced insulator-to-metal transition in YNiO_{3}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.045102</link>
    <description>Author(s): Aline Y. Ramos, Cinthia Piamonteze, Hélio C. N. Tolentino, Narcizo M. Souza-Neto, Oana Bunau, Yves Joly, Stéphane Grenier, Jean-Paul Itié, Néstor E. Massa, José A. Alonso, and Maria J. Martinez-Lope&lt;br/&gt;&lt;p&gt;The local environment of nickel atoms in &lt;span&gt;YNiO&lt;sub&gt;3&lt;/sub&gt;&lt;/span&gt; across the pressure-induced insulator-to-metal (IM) transition was studied using x-ray absorption spectroscopy (XAS) supported by &lt;span style="font-style: italic;"&gt;ab initio&lt;/span&gt; calculations. The monotonic contraction of the &lt;span&gt;NiO&lt;sub&gt;6&lt;/sub&gt;&lt;/span&gt; units under applied pressure observed up to 13 GPa stops in a...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 045102] Published Wed Jan 04, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Aline Y. Ramos, Cinthia Piamonteze, Hélio C. N. Tolentino, Narcizo M. Souza-Neto, Oana Bunau, Yves Joly, Stéphane Grenier, Jean-Paul Itié, Néstor E. Massa, José A. Alonso, and Maria J. Martinez-Lope</p><p> The local environment of nickel atoms in <span>YNiO<sub>3</sub></span> across the pressure-induced insulator-to-metal (IM) transition was studied using x-ray absorption spectroscopy (XAS) supported by <span style="font-style: italic;">ab initio</span> calculations. The monotonic contraction of the <span>NiO<sub>6</sub></span> units under applied pressure observed up to 13 GPa stops in a...</p><p>[Phys. Rev. B 85, 045102] Published Wed Jan 04, 2012</p>]]></content:encoded>
    <dc:title>Stability of Ni sites across the pressure-induced insulator-to-metal transition in YNiO_{3}</dc:title>
    <dc:creator>Aline Y. Ramos, Cinthia Piamonteze, Hélio C. N. Tolentino, Narcizo M. Souza-Neto, Oana Bunau, Yves Joly, Stéphane Grenier, Jean-Paul Itié, Néstor E. Massa, José A. Alonso, and Maria J. Martinez-Lope</dc:creator>
    <dc:date>2012-01-04T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.045102</dc:identifier>
    <dc:source>Phys. Rev. B 85, 045102 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2012-01-04T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.045102</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.045102</prism:url>
    <prism:startingPage>045102</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevA.85.011602">
    <title>Quantum criticality of a Bose gas in an optical lattice near the Mott transition</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevA.85.011602</link>
    <description>Author(s): A. Rançon and N. Dupuis&lt;br/&gt;&lt;p&gt;We derive the equation of state of bosons in an optical lattice in the framework of the Bose-Hubbard model. Near the density-driven Mott transition, the expression of the pressure &lt;span&gt;&lt;span style="font-style: italic;"&gt;P&lt;/span&gt;(&lt;span style="font-style: italic;"&gt;μ&lt;/span&gt;,&lt;span style="font-style: italic;"&gt;T&lt;/span&gt;)&lt;/span&gt; versus chemical potential and temperature is similar to that of a dilute Bose gas but with renormalized mass &lt;span&gt;&lt;span style="font-style: italic;"&gt;m&lt;/span&gt;&lt;sup&gt;*&lt;/sup&gt;&lt;/span&gt; a...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt; &lt;br/&gt;[Phys. Rev. A 85, 011602] Published Wed Jan 04, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): A. Rançon and N. Dupuis</p><p><img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/>  We derive the equation of state of bosons in an optical lattice in the framework of the Bose-Hubbard model. Near the density-driven Mott transition, the expression of the pressure <span><span style="font-style: italic;">P</span>(<span style="font-style: italic;">μ</span>,<span style="font-style: italic;">T</span>)</span> versus chemical potential and temperature is similar to that of a dilute Bose gas but with renormalized mass <span><span style="font-style: italic;">m</span><sup>*</sup></span> a...</p><p>[Phys. Rev. A 85, 011602] Published Wed Jan 04, 2012</p>]]></content:encoded>
    <dc:title>Quantum criticality of a Bose gas in an optical lattice near the Mott transition</dc:title>
    <dc:creator>A. Rançon and N. Dupuis</dc:creator>
    <dc:date>2012-01-04T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevA.85.011602</dc:identifier>
    <dc:source>Phys. Rev. A 85, 011602 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review A</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-04T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevA.85.011602</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevA.85.011602</prism:url>
    <prism:startingPage>011602</prism:startingPage>
    <dc:subject>Matter waves and collective properties of cold atoms and molecules</dc:subject>
    <prism:section>Matter waves and collective properties of cold atoms and molecules</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.85.035101">
    <title>Insulator-metal transition driven by change of doping and spin-orbit interaction in Sr_{2}IrO_{4}</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.85.035101</link>
    <description>Author(s): J. S. Lee, Y. Krockenberger, K. S. Takahashi, M. Kawasaki, and Y. Tokura&lt;br/&gt;&lt;p&gt;We have investigated the insulator-metal transition (IMT) of the 5&lt;span&gt;&lt;span style="font-style: italic;"&gt;d&lt;/span&gt;&lt;/span&gt; system Sr&lt;span&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/span&gt;IrO&lt;span&gt;&lt;sub&gt;4&lt;/sub&gt;&lt;/span&gt; by optical spectroscopy. Change of the band filling as well as tuning of the spin-orbit interaction (SOI) strength has been realized in single crystalline thin films with continuous cation substitutions. Upon the IMT,...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 85, 035101] Published Wed Jan 04, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): J. S. Lee, Y. Krockenberger, K. S. Takahashi, M. Kawasaki, and Y. Tokura</p><p> We have investigated the insulator-metal transition (IMT) of the 5<span><span style="font-style: italic;">d</span></span> system Sr<span><sub>2</sub></span>IrO<span><sub>4</sub></span> by optical spectroscopy. Change of the band filling as well as tuning of the spin-orbit interaction (SOI) strength has been realized in single crystalline thin films with continuous cation substitutions. Upon the IMT,...</p><p>[Phys. Rev. B 85, 035101] Published Wed Jan 04, 2012</p>]]></content:encoded>
    <dc:title>Insulator-metal transition driven by change of doping and spin-orbit interaction in Sr_{2}IrO_{4}</dc:title>
    <dc:creator>J. S. Lee, Y. Krockenberger, K. S. Takahashi, M. Kawasaki, and Y. Tokura</dc:creator>
    <dc:date>2012-01-04T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.85.035101</dc:identifier>
    <dc:source>Phys. Rev. B 85, 035101 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>3</prism:number>
    <prism:publicationDate>2012-01-04T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.85.035101</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.85.035101</prism:url>
    <prism:startingPage>035101</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevA.85.013606">
    <title>Mott transition of fermionic mixtures with mass imbalance in optical lattices</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevA.85.013606</link>
    <description>Author(s): Tung-Lam Dao, Michel Ferrero, Pablo S. Cornaglia, and Massimo Capone&lt;br/&gt;&lt;p&gt;We investigate the effect of mass imbalance in binary Fermi mixtures loaded in optical lattices. Using dynamical mean-field theory, we study the transition from a fluid to a Mott insulator driven by the repulsive interactions. For almost every value of the parameters we find that the light species w...&lt;/p&gt;&lt;br/&gt;[Phys. Rev. A 85, 013606] Published Wed Jan 04, 2012</description>
    <content:encoded><![CDATA[<p>Author(s): Tung-Lam Dao, Michel Ferrero, Pablo S. Cornaglia, and Massimo Capone</p><p> We investigate the effect of mass imbalance in binary Fermi mixtures loaded in optical lattices. Using dynamical mean-field theory, we study the transition from a fluid to a Mott insulator driven by the repulsive interactions. For almost every value of the parameters we find that the light species w...</p><p>[Phys. Rev. A 85, 013606] Published Wed Jan 04, 2012</p>]]></content:encoded>
    <dc:title>Mott transition of fermionic mixtures with mass imbalance in optical lattices</dc:title>
    <dc:creator>Tung-Lam Dao, Michel Ferrero, Pablo S. Cornaglia, and Massimo Capone</dc:creator>
    <dc:date>2012-01-04T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevA.85.013606</dc:identifier>
    <dc:source>Phys. Rev. A 85, 013606 (2012)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review A</prism:publicationName>
    <prism:volume>85</prism:volume>
    <prism:number>1</prism:number>
    <prism:publicationDate>2012-01-04T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevA.85.013606</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevA.85.013606</prism:url>
    <prism:startingPage>013606</prism:startingPage>
    <dc:subject>Matter waves and collective properties of cold atoms and molecules</dc:subject>
    <prism:section>Matter waves and collective properties of cold atoms and molecules</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.84.241110">
    <title>Linearized auxiliary fields Monte Carlo technique: Efficient sampling of the fermion sign</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.84.241110</link>
    <description>Author(s): Sandro Sorella&lt;br/&gt;&lt;p&gt;We introduce a method that combines the power of both the lattice Green' function Monte Carlo (LGFMC) with the auxiliary field quantum Monte Carlo (AFQMC) techniques, and allows us to compute &lt;span style="font-style: italic;"&gt;exact&lt;/span&gt; ground-state properties of the Hubbard model for &lt;span&gt;&lt;span style="font-style: italic;"&gt;U&lt;/span&gt;≲4&lt;span style="font-style: italic;"&gt;t&lt;/span&gt;&lt;/span&gt; on finite clusters. Thanks to LGFMC, one obtains...&lt;/p&gt;&lt;br/&gt;&lt;img src="http://publish.aps.org/images/icons/prbsugg30x30.jpg" alt="PRB Editors' Suggestion"/&gt; &lt;img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt; &lt;br/&gt;[Phys. Rev. B 84, 241110] Published Thu Dec 29, 2011</description>
    <content:encoded><![CDATA[<p>Author(s): Sandro Sorella</p><p><img src="http://publish.aps.org/images/icons/prbsugg30x30.jpg" alt="PRB Editors' Suggestion"/> <img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/>  We introduce a method that combines the power of both the lattice Green' function Monte Carlo (LGFMC) with the auxiliary field quantum Monte Carlo (AFQMC) techniques, and allows us to compute <span style="font-style: italic;">exact</span> ground-state properties of the Hubbard model for <span><span style="font-style: italic;">U</span>≲4<span style="font-style: italic;">t</span></span> on finite clusters. Thanks to LGFMC, one obtains...</p><p>[Phys. Rev. B 84, 241110] Published Thu Dec 29, 2011</p>]]></content:encoded>
    <dc:title>Linearized auxiliary fields Monte Carlo technique: Efficient sampling of the fermion sign</dc:title>
    <dc:creator>Sandro Sorella</dc:creator>
    <dc:date>2011-12-29T10:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>doi:10.1103/PhysRevB.84.241110</dc:identifier>
    <dc:source>Phys. Rev. B 84, 241110 (2011)</dc:source>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>84</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2011-12-29T10:00:00-05:00</prism:publicationDate>
    <prism:doi>10.1103/PhysRevB.84.241110</prism:doi>
    <prism:url>http://link.aps.org/doi/10.1103/PhysRevB.84.241110</prism:url>
    <prism:startingPage>241110</prism:startingPage>
    <dc:subject>Electronic structure and strongly correlated systems</dc:subject>
    <prism:section>Electronic structure and strongly correlated systems</prism:section>
  </item>
</rdf:RDF>

