Physical Review: Magnetic Semiconductors http://publish.aps.org/ Magnetic Semiconductorsarticles published in Physical Review Journals hourly 1 2012-02-09T21:06:12-05:00 rss@aps.org assocpub@aps.org 2012-02-09T21:06:12-05:00 en Copyright © 2012 the American Physical Society. Personal use only, all commercial or other reuse prohibited Copyright © 2012 the American Physical Society assocpub@aps.org Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic (Ga,Mn)As http://link.aps.org/doi/10.1103/PhysRevB.85.075206 Author(s): K. Shen and M. W. Wu<br/><p>We investigate the temperature dependence of the coefficients in the Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs by employing the Zener model. We first calculate the hole spin relaxation time based on the microscopic kinetic equation. We find that the hole spin relaxation time is typica...</p><br/>[Phys. Rev. B 85, 075206] Published Thu Feb 09, 2012 Author(s): K. Shen and M. W. Wu

We investigate the temperature dependence of the coefficients in the Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs by employing the Zener model. We first calculate the hole spin relaxation time based on the microscopic kinetic equation. We find that the hole spin relaxation time is typica...

[Phys. Rev. B 85, 075206] Published Thu Feb 09, 2012

]]> Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic (Ga,Mn)As K. Shen and M. W. Wu 2012-02-09T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.075206 Phys. Rev. B 85, 075206 (2012) article Physical Review B 85 7 2012-02-09T10:00:00-05:00 10.1103/PhysRevB.85.075206 http://link.aps.org/doi/10.1103/PhysRevB.85.075206 075206 Semiconductors I: bulk Semiconductors I: bulk Nanoscale inhomogeneities: A new path toward high Curie temperature ferromagnetism in diluted materials http://link.aps.org/doi/10.1103/PhysRevB.85.014201 Author(s): Akash Chakraborty, Richard Bouzerar, Stefan Kettemann, and Georges Bouzerar<br/><p>Room-temperature ferromagnetism has been one of the most sought after topics in today's emerging field of spintronics. It is strongly believed that defect- and inhomogeneity-free sample growth should be the optimal route for achieving room-temperature ferromagnetism, and huge efforts are made in ord...</p><br/>[Phys. Rev. B 85, 014201] Published Thu Jan 19, 2012 Author(s): Akash Chakraborty, Richard Bouzerar, Stefan Kettemann, and Georges Bouzerar

Room-temperature ferromagnetism has been one of the most sought after topics in today's emerging field of spintronics. It is strongly believed that defect- and inhomogeneity-free sample growth should be the optimal route for achieving room-temperature ferromagnetism, and huge efforts are made in ord...

[Phys. Rev. B 85, 014201] Published Thu Jan 19, 2012

]]> Nanoscale inhomogeneities: A new path toward high Curie temperature ferromagnetism in diluted materials Akash Chakraborty, Richard Bouzerar, Stefan Kettemann, and Georges Bouzerar 2012-01-19T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.014201 Phys. Rev. B 85, 014201 (2012) article Physical Review B 85 1 2012-01-19T10:00:00-05:00 10.1103/PhysRevB.85.014201 http://link.aps.org/doi/10.1103/PhysRevB.85.014201 014201 Inhomogeneous, disordered, and partially ordered systems Inhomogeneous, disordered, and partially ordered systems Amplification of spin-filtering effect by magnetic field in GaAsN alloys http://link.aps.org/doi/10.1103/PhysRevB.85.035205 Author(s): V. K. Kalevich, M. M. Afanasiev, A. Yu. Shiryaev, and A. Yu. Egorov<br/><p>The effect of a longitudinal magnetic field on the optical spin orientation and spin-dependent recombination in dilute nitrides GaAsN has been studied for the first time. We have found that intensity <span><span style="font-style: italic;">I</span></span> and circular polarization degree <span><span style="font-style: italic;">ρ</span></span> of the edge photoluminescence, excited in GaAsN alloys by circu...</p><br/>[Phys. Rev. B 85, 035205] Published Tue Jan 17, 2012 Author(s): V. K. Kalevich, M. M. Afanasiev, A. Yu. Shiryaev, and A. Yu. Egorov

The effect of a longitudinal magnetic field on the optical spin orientation and spin-dependent recombination in dilute nitrides GaAsN has been studied for the first time. We have found that intensity I and circular polarization degree ρ of the edge photoluminescence, excited in GaAsN alloys by circu...

[Phys. Rev. B 85, 035205] Published Tue Jan 17, 2012

]]> Amplification of spin-filtering effect by magnetic field in GaAsN alloys V. K. Kalevich, M. M. Afanasiev, A. Yu. Shiryaev, and A. Yu. Egorov 2012-01-17T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.035205 Phys. Rev. B 85, 035205 (2012) article Physical Review B 85 3 2012-01-17T10:00:00-05:00 10.1103/PhysRevB.85.035205 http://link.aps.org/doi/10.1103/PhysRevB.85.035205 035205 Semiconductors I: bulk Semiconductors I: bulk Optical third harmonic generation in the magnetic semiconductor EuSe http://link.aps.org/doi/10.1103/PhysRevB.85.035206 Author(s): M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, R. V. Pisarev, A. B. Henriques, D. R. Yakovlev, G. Springholz, G. Bauer, and M. Bayer<br/><p>Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at <span>2.1–2.6</span> eV and at higher energies up to <span>3.7</span> eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group <span><span style="font-style: italic;">m</span>3<span style="font-style: italic;">m</span></span>. For this symmetry the c...</p><br/>[Phys. Rev. B 85, 035206] Published Tue Jan 17, 2012 Author(s): M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, R. V. Pisarev, A. B. Henriques, D. R. Yakovlev, G. Springholz, G. Bauer, and M. Bayer

Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.1–2.6 eV and at higher energies up to 3.7 eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the c...

[Phys. Rev. B 85, 035206] Published Tue Jan 17, 2012

]]> Optical third harmonic generation in the magnetic semiconductor EuSe M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, R. V. Pisarev, A. B. Henriques, D. R. Yakovlev, G. Springholz, G. Bauer, and M. Bayer 2012-01-17T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.035206 Phys. Rev. B 85, 035206 (2012) article Physical Review B 85 3 2012-01-17T10:00:00-05:00 10.1103/PhysRevB.85.035206 http://link.aps.org/doi/10.1103/PhysRevB.85.035206 035206 Semiconductors I: bulk Semiconductors I: bulk Optical properties of Mn-doped GaN http://link.aps.org/doi/10.1103/PhysRevB.85.033302 Author(s): A. Boukortt, R. Hayn, and F. Virot<br/><p>Wide-gap GaN semiconductors with or without Mn impurities are extremely interesting systems for opto- or spintronics applications. We present a theoretical study of the optical properties of Ga<span><sub>1−<span style="font-style: italic;">x</span></sub></span>Mn<span><sub><span style="font-style: italic;">x</span></sub></span>N in the cubic structure using a supercell of 64 atoms. First-principles calculations based on densit...</p><br/>[Phys. Rev. B 85, 033302] Published Mon Jan 09, 2012 Author(s): A. Boukortt, R. Hayn, and F. Virot

Wide-gap GaN semiconductors with or without Mn impurities are extremely interesting systems for opto- or spintronics applications. We present a theoretical study of the optical properties of Ga1−xMnxN in the cubic structure using a supercell of 64 atoms. First-principles calculations based on densit...

[Phys. Rev. B 85, 033302] Published Mon Jan 09, 2012

]]> Optical properties of Mn-doped GaN A. Boukortt, R. Hayn, and F. Virot 2012-01-09T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.033302 Phys. Rev. B 85, 033302 (2012) article Physical Review B 85 3 2012-01-09T10:00:00-05:00 10.1103/PhysRevB.85.033302 http://link.aps.org/doi/10.1103/PhysRevB.85.033302 033302 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics Spin switching in a Mn-doped quantum dot using the optical Stark effect http://link.aps.org/doi/10.1103/PhysRevB.85.045308 Author(s): D. E. Reiter, T. Kuhn, and V. M. Axt<br/><p>In a single quantum dot doped with a single Mn atom, ultrafast optical control can be used to coherently manipulate the Mn spin state. Here we show that due to the optical Stark effect induced by a detuned laser pulse the Mn spin can be efficiently flipped by one during the action of the pulse. We d...</p><br/>[Phys. Rev. B 85, 045308] Published Mon Jan 09, 2012 Author(s): D. E. Reiter, T. Kuhn, and V. M. Axt

In a single quantum dot doped with a single Mn atom, ultrafast optical control can be used to coherently manipulate the Mn spin state. Here we show that due to the optical Stark effect induced by a detuned laser pulse the Mn spin can be efficiently flipped by one during the action of the pulse. We d...

[Phys. Rev. B 85, 045308] Published Mon Jan 09, 2012

]]> Spin switching in a Mn-doped quantum dot using the optical Stark effect D. E. Reiter, T. Kuhn, and V. M. Axt 2012-01-09T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.045308 Phys. Rev. B 85, 045308 (2012) article Physical Review B 85 4 2012-01-09T10:00:00-05:00 10.1103/PhysRevB.85.045308 http://link.aps.org/doi/10.1103/PhysRevB.85.045308 045308 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics Observation of a blue shift in the optical response at the fundamental band gap in Ga_{1-x}Mn_{x}As http://link.aps.org/doi/10.1103/PhysRevB.85.033202 Author(s): T. de Boer, A. Gamouras, S. March, V. Novák, and K. C. Hall<br/><p>We report the observation of a sharp band-edge response in spectrally resolved differential reflectivity experiments on GaMnAs, in contrast to linear optical experiments in which large band-tail effects are known to dominate. The differential reflectivity response exhibits a blue shift relative to r...</p><br/>[Phys. Rev. B 85, 033202] Published Fri Jan 06, 2012 Author(s): T. de Boer, A. Gamouras, S. March, V. Novák, and K. C. Hall

We report the observation of a sharp band-edge response in spectrally resolved differential reflectivity experiments on GaMnAs, in contrast to linear optical experiments in which large band-tail effects are known to dominate. The differential reflectivity response exhibits a blue shift relative to r...

[Phys. Rev. B 85, 033202] Published Fri Jan 06, 2012

]]> Observation of a blue shift in the optical response at the fundamental band gap in Ga_{1-x}Mn_{x}As T. de Boer, A. Gamouras, S. March, V. Novák, and K. C. Hall 2012-01-06T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.033202 Phys. Rev. B 85, 033202 (2012) article Physical Review B 85 3 2012-01-06T10:00:00-05:00 10.1103/PhysRevB.85.033202 http://link.aps.org/doi/10.1103/PhysRevB.85.033202 033202 Semiconductors I: bulk Semiconductors I: bulk Effect of gadolinium doping on the electronic band structure of europium oxide http://link.aps.org/doi/10.1103/PhysRevB.85.014406 Author(s): Juan A. Colón Santana, Joonhee M. An, Ning Wu, Kirill D. Belashchenko, Xianjie Wang, Pan Liu, Jinke Tang, Yaroslav Losovyj, I. N. Yakovkin, and P. A. Dowben<br/><p>High quality films of EuO and Eu<span><sub>0.96</sub></span>Gd<span><sub>0.04</sub></span>O were grown on <span><span style="font-style: italic;">p</span></span>-type Si(100) via pulsed laser deposition. X-ray-diffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the <span><span style="font-style: italic;">X</span></span> points in Gd-...</p><br/>[Phys. Rev. B 85, 014406] Published Thu Jan 05, 2012 Author(s): Juan A. Colón Santana, Joonhee M. An, Ning Wu, Kirill D. Belashchenko, Xianjie Wang, Pan Liu, Jinke Tang, Yaroslav Losovyj, I. N. Yakovkin, and P. A. Dowben

High quality films of EuO and Eu0.96Gd0.04O were grown on p-type Si(100) via pulsed laser deposition. X-ray-diffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-...

[Phys. Rev. B 85, 014406] Published Thu Jan 05, 2012

]]> Effect of gadolinium doping on the electronic band structure of europium oxide Juan A. Colón Santana, Joonhee M. An, Ning Wu, Kirill D. Belashchenko, Xianjie Wang, Pan Liu, Jinke Tang, Yaroslav Losovyj, I. N. Yakovkin, and P. A. Dowben 2012-01-05T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.014406 Phys. Rev. B 85, 014406 (2012) article Physical Review B 85 1 2012-01-05T10:00:00-05:00 10.1103/PhysRevB.85.014406 http://link.aps.org/doi/10.1103/PhysRevB.85.014406 014406 Magnetism Magnetism Local structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001) http://link.aps.org/doi/10.1103/PhysRevB.85.014405 Author(s): S. Kahwaji, R. A. Gordon, E. D. Crozier, and T. L. Monchesky<br/><p>The structural and magnetic properties of ultrathin Mn layers deposited onto Si(001) by molecular beam epitaxy at low temperature are reported. X-ray absorption fine structure studies reveal that the structure of the silicide layer that forms depends on the growth temperature of the capping layer. A...</p><br/>[Phys. Rev. B 85, 014405] Published Thu Jan 05, 2012 Author(s): S. Kahwaji, R. A. Gordon, E. D. Crozier, and T. L. Monchesky

The structural and magnetic properties of ultrathin Mn layers deposited onto Si(001) by molecular beam epitaxy at low temperature are reported. X-ray absorption fine structure studies reveal that the structure of the silicide layer that forms depends on the growth temperature of the capping layer. A...

[Phys. Rev. B 85, 014405] Published Thu Jan 05, 2012

]]> Local structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001) S. Kahwaji, R. A. Gordon, E. D. Crozier, and T. L. Monchesky 2012-01-05T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.85.014405 Phys. Rev. B 85, 014405 (2012) article Physical Review B 85 1 2012-01-05T10:00:00-05:00 10.1103/PhysRevB.85.014405 http://link.aps.org/doi/10.1103/PhysRevB.85.014405 014405 Magnetism Magnetism Dynamical spin Hall conductivity in a magnetic disordered system http://link.aps.org/doi/10.1103/PhysRevB.84.245210 Author(s): T. L. van den Berg, L. Raymond, and A. Verga<br/><p>We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers’ spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions, we analytically compute the spin Hall conductivity. It is d...</p><br/>[Phys. Rev. B 84, 245210] Published Tue Dec 27, 2011 Author(s): T. L. van den Berg, L. Raymond, and A. Verga

We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers’ spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions, we analytically compute the spin Hall conductivity. It is d...

[Phys. Rev. B 84, 245210] Published Tue Dec 27, 2011

]]> Dynamical spin Hall conductivity in a magnetic disordered system T. L. van den Berg, L. Raymond, and A. Verga 2011-12-27T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.245210 Phys. Rev. B 84, 245210 (2011) article Physical Review B 84 24 2011-12-27T10:00:00-05:00 10.1103/PhysRevB.84.245210 http://link.aps.org/doi/10.1103/PhysRevB.84.245210 245210 Semiconductors I: bulk Semiconductors I: bulk Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As http://link.aps.org/doi/10.1103/PhysRevB.84.214432 Author(s): T. L. Linnik, A. V. Scherbakov, D. R. Yakovlev, X. Liu, J. K. Furdyna, and M. Bayer<br/><p>A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the ...</p><br/>[Phys. Rev. B 84, 214432] Published Thu Dec 22, 2011 Author(s): T. L. Linnik, A. V. Scherbakov, D. R. Yakovlev, X. Liu, J. K. Furdyna, and M. Bayer

A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the ...

[Phys. Rev. B 84, 214432] Published Thu Dec 22, 2011

]]> Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As T. L. Linnik, A. V. Scherbakov, D. R. Yakovlev, X. Liu, J. K. Furdyna, and M. Bayer 2011-12-22T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.214432 Phys. Rev. B 84, 214432 (2011) article Physical Review B 84 21 2011-12-22T10:00:00-05:00 10.1103/PhysRevB.84.214432 http://link.aps.org/doi/10.1103/PhysRevB.84.214432 214432 Magnetism Magnetism Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content http://link.aps.org/doi/10.1103/PhysRevB.84.245306 Author(s): Janusz Sadowski, Jaroslaw Z. Domagala, Roland Mathieu, András Kovács, Takeshi Kasama, Rafal E. Dunin-Borkowski, and Tomasz Dietl<br/><p>X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400 °C) and high-temperature (560 °C and 630...</p><br/>[Phys. Rev. B 84, 245306] Published Mon Dec 12, 2011 Author(s): Janusz Sadowski, Jaroslaw Z. Domagala, Roland Mathieu, András Kovács, Takeshi Kasama, Rafal E. Dunin-Borkowski, and Tomasz Dietl

X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400 °C) and high-temperature (560 °C and 630...

[Phys. Rev. B 84, 245306] Published Mon Dec 12, 2011

]]> Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content Janusz Sadowski, Jaroslaw Z. Domagala, Roland Mathieu, András Kovács, Takeshi Kasama, Rafal E. Dunin-Borkowski, and Tomasz Dietl 2011-12-12T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.245306 Phys. Rev. B 84, 245306 (2011) article Physical Review B 84 24 2011-12-12T10:00:00-05:00 10.1103/PhysRevB.84.245306 http://link.aps.org/doi/10.1103/PhysRevB.84.245306 245306 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics Cr in diamond: A first-principles study http://link.aps.org/doi/10.1103/PhysRevB.84.235201 Author(s): E. M. Benecha and E. B. Lombardi<br/><p>We report <span style="font-style: italic;">ab initio</span> pseudopotential DFT calculations on the energetic stability and magnetic ordering of Cr in diamond at various lattice sites and charge states and show that Cr is most stable at the divacancy site in diamond, with the lowest formation energy occurring in <span><span style="font-style: italic;">n</span></span>- or <span><span style="font-style: italic;">p</span></span>-type diamond, comp...</p><br/>[Phys. Rev. B 84, 235201] Published Thu Dec 01, 2011 Author(s): E. M. Benecha and E. B. Lombardi

We report ab initio pseudopotential DFT calculations on the energetic stability and magnetic ordering of Cr in diamond at various lattice sites and charge states and show that Cr is most stable at the divacancy site in diamond, with the lowest formation energy occurring in n- or p-type diamond, comp...

[Phys. Rev. B 84, 235201] Published Thu Dec 01, 2011

]]> Cr in diamond: A first-principles study E. M. Benecha and E. B. Lombardi 2011-12-01T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.235201 Phys. Rev. B 84, 235201 (2011) article Physical Review B 84 23 2011-12-01T10:00:00-05:00 10.1103/PhysRevB.84.235201 http://link.aps.org/doi/10.1103/PhysRevB.84.235201 235201 Semiconductors I: bulk Semiconductors I: bulk Orbital pathways for Mn^{2+}-carrier sp-d exchange in diluted magnetic semiconductor quantum dots http://link.aps.org/doi/10.1103/PhysRevB.84.195324 Author(s): Rémi Beaulac, Yong Feng, Joseph W. May, Ekaterina Badaeva, Daniel R. Gamelin, and Xiaosong Li<br/><p>Manganese-carrier magnetic exchange interactions in strongly quantum-confined Mn<span><sup>2+</sup></span>-doped CdSe quantum dots (QDs) having <span><span style="font-style: italic;">d</span><sub>QD</sub></span> <span>=</span> 1.52, 2.08, and 2.54 nm have been investigated using a combination of density functional theory (DFT) and perturbation theory calculations. Established perturbation expressio...</p><br/>[Phys. Rev. B 84, 195324] Published Mon Nov 28, 2011 Author(s): Rémi Beaulac, Yong Feng, Joseph W. May, Ekaterina Badaeva, Daniel R. Gamelin, and Xiaosong Li

Manganese-carrier magnetic exchange interactions in strongly quantum-confined Mn2+-doped CdSe quantum dots (QDs) having dQD = 1.52, 2.08, and 2.54 nm have been investigated using a combination of density functional theory (DFT) and perturbation theory calculations. Established perturbation expressio...

[Phys. Rev. B 84, 195324] Published Mon Nov 28, 2011

]]> Orbital pathways for Mn^{2+}-carrier sp-d exchange in diluted magnetic semiconductor quantum dots Rémi Beaulac, Yong Feng, Joseph W. May, Ekaterina Badaeva, Daniel R. Gamelin, and Xiaosong Li 2011-11-28T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.195324 Phys. Rev. B 84, 195324 (2011) article Physical Review B 84 19 2011-11-28T10:00:00-05:00 10.1103/PhysRevB.84.195324 http://link.aps.org/doi/10.1103/PhysRevB.84.195324 195324 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics Publisher’s Note: Magnetoresistance effects and phase coherent transport phenomena in a magnetic nonplanar two-dimensional hole system [Phys. Rev. B 84, 205302 (2011)] http://link.aps.org/doi/10.1103/PhysRevB.84.199911 Author(s): Stefan Knott, Thomas Ch. Hirschmann, Ursula Wurstbauer, Wolfgang Hansen, and Werner Wegscheider<br/>[Phys. Rev. B 84, 199911] Published Mon Nov 28, 2011 Author(s): Stefan Knott, Thomas Ch. Hirschmann, Ursula Wurstbauer, Wolfgang Hansen, and Werner Wegscheider

[Phys. Rev. B 84, 199911] Published Mon Nov 28, 2011

]]> Publisher’s Note: Magnetoresistance effects and phase coherent transport phenomena in a magnetic nonplanar two-dimensional hole system [Phys. Rev. B 84, 205302 (2011)] Stefan Knott, Thomas Ch. Hirschmann, Ursula Wurstbauer, Wolfgang Hansen, and Werner Wegscheider 2011-11-28T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.199911 Phys. Rev. B 84, 199911 (2011) article Physical Review B 84 19 2011-11-28T10:00:00-05:00 10.1103/PhysRevB.84.199911 http://link.aps.org/doi/10.1103/PhysRevB.84.199911 199911 Errata Errata Multiple exchange interactions induced by Jahn-Teller distortions in dilute magnetic semiconductors http://link.aps.org/doi/10.1103/PhysRevB.84.172406 Author(s): Hannes Raebiger and Takeshi Fujita<br/><p>Transition metal impurities in semiconductors exhibit intricate magnetic interactions, usually rationalized via symmetry orbitals assuming an undistorted point symmetry of the host semiconductor. These interactions may then be described via simple rules based on the occupation of these symmetry orbi...</p><br/>[Phys. Rev. B 84, 172406] Published Thu Nov 17, 2011 Author(s): Hannes Raebiger and Takeshi Fujita

Transition metal impurities in semiconductors exhibit intricate magnetic interactions, usually rationalized via symmetry orbitals assuming an undistorted point symmetry of the host semiconductor. These interactions may then be described via simple rules based on the occupation of these symmetry orbi...

[Phys. Rev. B 84, 172406] Published Thu Nov 17, 2011

]]> Multiple exchange interactions induced by Jahn-Teller distortions in dilute magnetic semiconductors Hannes Raebiger and Takeshi Fujita 2011-11-17T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.172406 Phys. Rev. B 84, 172406 (2011) article Physical Review B 84 17 2011-11-17T10:00:00-05:00 10.1103/PhysRevB.84.172406 http://link.aps.org/doi/10.1103/PhysRevB.84.172406 172406 Magnetism Magnetism Magnetic phase diagram of Eu_{1−x}Gd_{x}S http://link.aps.org/doi/10.1103/PhysRevB.84.184428 Author(s): Roman Rausch and Wolfgang Nolting<br/><p>We propose a model to investigate the magnetic properties of Eu<span><sub>1−<span style="font-style: italic;">x</span></sub></span>Gd<span><sub><span style="font-style: italic;">x</span></sub></span>S consisting of an <span style="font-style: italic;">s-f</span> term with chemical disorder due to the separation of the atomic energy levels of the <span><span style="font-style: italic;">s</span></span> electrons <span><span style="font-style: italic;">Δ</span><span style="font-style: italic;">V</span></span> and a disordered Heisenberg term. The model is solved by using a self-consistent modified Rudermann-Kittel-K...</p><br/>[Phys. Rev. B 84, 184428] Published Thu Nov 17, 2011 Author(s): Roman Rausch and Wolfgang Nolting

We propose a model to investigate the magnetic properties of Eu1−xGdxS consisting of an s-f term with chemical disorder due to the separation of the atomic energy levels of the s electrons ΔV and a disordered Heisenberg term. The model is solved by using a self-consistent modified Rudermann-Kittel-K...

[Phys. Rev. B 84, 184428] Published Thu Nov 17, 2011

]]> Magnetic phase diagram of Eu_{1−x}Gd_{x}S Roman Rausch and Wolfgang Nolting 2011-11-17T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.184428 Phys. Rev. B 84, 184428 (2011) article Physical Review B 84 18 2011-11-17T10:00:00-05:00 10.1103/PhysRevB.84.184428 http://link.aps.org/doi/10.1103/PhysRevB.84.184428 184428 Magnetism Magnetism Spin-orbit coupling effect in (Ga,Mn)As films: Anisotropic exchange interactions and magnetocrystalline anisotropy http://link.aps.org/doi/10.1103/PhysRevB.84.201201 Author(s): S. Mankovsky, S. Polesya, S. Bornemann, J. Minár, F. Hoffmann, C. H. Back, and H. Ebert<br/><p>The magnetocrystalline anisotropy (MCA) of (Ga,Mn)As films has been studied on the basis of <span style="font-style: italic;">ab initio</span> electronic structure theory by performing magnetic torque calculations. An appreciable contribution to the in-plane uniaxial anisotropy can be attributed to an extended region adjacent to the surfac...</p><br/><img src="http://publish.aps.org/images/icons/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/> <br/>[Phys. Rev. B 84, 201201] Published Tue Nov 15, 2011 Author(s): S. Mankovsky, S. Polesya, S. Bornemann, J. Minár, F. Hoffmann, C. H. Back, and H. Ebert

Rapid Communication The magnetocrystalline anisotropy (MCA) of (Ga,Mn)As films has been studied on the basis of ab initio electronic structure theory by performing magnetic torque calculations. An appreciable contribution to the in-plane uniaxial anisotropy can be attributed to an extended region adjacent to the surfac...

[Phys. Rev. B 84, 201201] Published Tue Nov 15, 2011

]]> Spin-orbit coupling effect in (Ga,Mn)As films: Anisotropic exchange interactions and magnetocrystalline anisotropy S. Mankovsky, S. Polesya, S. Bornemann, J. Minár, F. Hoffmann, C. H. Back, and H. Ebert 2011-11-15T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.201201 Phys. Rev. B 84, 201201 (2011) article Physical Review B 84 20 2011-11-15T10:00:00-05:00 10.1103/PhysRevB.84.201201 http://link.aps.org/doi/10.1103/PhysRevB.84.201201 201201 Semiconductors I: bulk Semiconductors I: bulk Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study http://link.aps.org/doi/10.1103/PhysRevB.84.195444 Author(s): Jun Ding, Zhenhua Qiao, Wanxiang Feng, Yugui Yao, and Qian Niu<br/><p>We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3<span><span style="font-style: italic;">d</span></span> transition and noble-metal atoms using first-principles calculation methods. We find that most transition-metal atoms (i.e., Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interact...</p><br/>[Phys. Rev. B 84, 195444] Published Tue Nov 15, 2011 Author(s): Jun Ding, Zhenhua Qiao, Wanxiang Feng, Yugui Yao, and Qian Niu

We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d transition and noble-metal atoms using first-principles calculation methods. We find that most transition-metal atoms (i.e., Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interact...

[Phys. Rev. B 84, 195444] Published Tue Nov 15, 2011

]]> Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study Jun Ding, Zhenhua Qiao, Wanxiang Feng, Yugui Yao, and Qian Niu 2011-11-15T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.195444 Phys. Rev. B 84, 195444 (2011) article Physical Review B 84 19 2011-11-15T10:00:00-05:00 10.1103/PhysRevB.84.195444 http://link.aps.org/doi/10.1103/PhysRevB.84.195444 195444 Surface physics, nanoscale physics, low-dimensional systems Surface physics, nanoscale physics, low-dimensional systems Room-temperature p-induced surface ferromagnetism: First-principles study http://link.aps.org/doi/10.1103/PhysRevB.84.205306 Author(s): Guntram Fischer, Nadiezhda Sanchez, Waheed Adeagbo, Martin Lüders, Zdzislawa Szotek, Walter M. Temmerman, Arthur Ernst, Wolfram Hergert, and M. Carmen Muñoz<br/><p>We prove a spontaneous magnetization of the oxygen-terminated ZnO (0001) surface by utilizing a multicode, SIESTA and KKR, first-principles approach, involving both LSDA+<span><span style="font-style: italic;">U</span></span> and self-interaction corrections to treat electron correlation effects. Critical temperatures are estimated from Monte Carlo sim...</p><br/>[Phys. Rev. B 84, 205306] Published Fri Nov 11, 2011 Author(s): Guntram Fischer, Nadiezhda Sanchez, Waheed Adeagbo, Martin Lüders, Zdzislawa Szotek, Walter M. Temmerman, Arthur Ernst, Wolfram Hergert, and M. Carmen Muñoz

We prove a spontaneous magnetization of the oxygen-terminated ZnO (0001) surface by utilizing a multicode, SIESTA and KKR, first-principles approach, involving both LSDA+U and self-interaction corrections to treat electron correlation effects. Critical temperatures are estimated from Monte Carlo sim...

[Phys. Rev. B 84, 205306] Published Fri Nov 11, 2011

]]> Room-temperature p-induced surface ferromagnetism: First-principles study Guntram Fischer, Nadiezhda Sanchez, Waheed Adeagbo, Martin Lüders, Zdzislawa Szotek, Walter M. Temmerman, Arthur Ernst, Wolfram Hergert, and M. Carmen Muñoz 2011-11-11T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.205306 Phys. Rev. B 84, 205306 (2011) article Physical Review B 84 20 2011-11-11T10:00:00-05:00 10.1103/PhysRevB.84.205306 http://link.aps.org/doi/10.1103/PhysRevB.84.205306 205306 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics Carrier-mediated nonlocal ferromagnetic coupling between local magnetic polarons in Fe-doped In_{2}O_{3} and Co-doped ZnO http://link.aps.org/doi/10.1103/PhysRevB.84.205204 Author(s): Shifei Qi, Fengxian Jiang, Jiuping Fan, H. Wu, S. B. Zhang, Gillian A. Gehring, Zhenyu Zhang, and Xiaohong Xu<br/><p>The combined roles of oxygen vacancy and electron doping in mediating local and nonlocal magnetic ordering of Fe doped in In<span><sub>2</sub></span>O<span><sub>3</sub></span> and Co doped in ZnO have been investigated within first-principles density functional theory. We first show theoretically that two magnetic dopants can be stabilized energe...</p><br/>[Phys. Rev. B 84, 205204] Published Wed Nov 09, 2011 Author(s): Shifei Qi, Fengxian Jiang, Jiuping Fan, H. Wu, S. B. Zhang, Gillian A. Gehring, Zhenyu Zhang, and Xiaohong Xu

The combined roles of oxygen vacancy and electron doping in mediating local and nonlocal magnetic ordering of Fe doped in In2O3 and Co doped in ZnO have been investigated within first-principles density functional theory. We first show theoretically that two magnetic dopants can be stabilized energe...

[Phys. Rev. B 84, 205204] Published Wed Nov 09, 2011

]]> Carrier-mediated nonlocal ferromagnetic coupling between local magnetic polarons in Fe-doped In_{2}O_{3} and Co-doped ZnO Shifei Qi, Fengxian Jiang, Jiuping Fan, H. Wu, S. B. Zhang, Gillian A. Gehring, Zhenyu Zhang, and Xiaohong Xu 2011-11-09T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.205204 Phys. Rev. B 84, 205204 (2011) article Physical Review B 84 20 2011-11-09T10:00:00-05:00 10.1103/PhysRevB.84.205204 http://link.aps.org/doi/10.1103/PhysRevB.84.205204 205204 Semiconductors I: bulk Semiconductors I: bulk Magnetoresistance effects and phase coherent transport phenomena in a magnetic nonplanar two-dimensional hole system http://link.aps.org/doi/10.1103/PhysRevB.84.205302 Author(s): Stefan Knott, Thomas Ch. Hirschmann, Ursula Wurstbauer, Wolfgang Hansen, and Werner Wegscheider<br/><p>Phase coherent transport phenomena are studied in a magnetic, two-dimensional hole system confined in a strained InAs quantum-well structure. At low magnetic fields we observe a well pronounced weak antilocalization signature, demonstrating that magnetic ions in proximity to the itinerant holes pres...</p><br/>[Phys. Rev. B 84, 205302] Published Wed Nov 09, 2011 Author(s): Stefan Knott, Thomas Ch. Hirschmann, Ursula Wurstbauer, Wolfgang Hansen, and Werner Wegscheider

Phase coherent transport phenomena are studied in a magnetic, two-dimensional hole system confined in a strained InAs quantum-well structure. At low magnetic fields we observe a well pronounced weak antilocalization signature, demonstrating that magnetic ions in proximity to the itinerant holes pres...

[Phys. Rev. B 84, 205302] Published Wed Nov 09, 2011

]]> Magnetoresistance effects and phase coherent transport phenomena in a magnetic nonplanar two-dimensional hole system Stefan Knott, Thomas Ch. Hirschmann, Ursula Wurstbauer, Wolfgang Hansen, and Werner Wegscheider 2011-11-09T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.205302 Phys. Rev. B 84, 205302 (2011) article Physical Review B 84 20 2011-11-09T10:00:00-05:00 10.1103/PhysRevB.84.205302 http://link.aps.org/doi/10.1103/PhysRevB.84.205302 205302 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics Effect of pinning-field distribution on the process of magnetization reversal in Ga_{1−x}Mn_{x}As films http://link.aps.org/doi/10.1103/PhysRevB.84.184407 Author(s): Jungtaek Kim, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, and J. K. Furdyna<br/><p>The process of magnetization reversal in a Ga<span><sub>1−<span style="font-style: italic;">x</span></sub></span>Mn<span><sub><span style="font-style: italic;">x</span></sub></span>As film is investigated by using angle-dependent measurements of the planar Hall effect. When a small field (e.g., below 25 Oe) is used, the planar Hall resistance (PHR) displays four stable values arising from the formation of four different multid...</p><br/>[Phys. Rev. B 84, 184407] Published Mon Nov 07, 2011 Author(s): Jungtaek Kim, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, and J. K. Furdyna

The process of magnetization reversal in a Ga1−xMnxAs film is investigated by using angle-dependent measurements of the planar Hall effect. When a small field (e.g., below 25 Oe) is used, the planar Hall resistance (PHR) displays four stable values arising from the formation of four different multid...

[Phys. Rev. B 84, 184407] Published Mon Nov 07, 2011

]]> Effect of pinning-field distribution on the process of magnetization reversal in Ga_{1−x}Mn_{x}As films Jungtaek Kim, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, and J. K. Furdyna 2011-11-07T10:00:00-05:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.184407 Phys. Rev. B 84, 184407 (2011) article Physical Review B 84 18 2011-11-07T10:00:00-05:00 10.1103/PhysRevB.84.184407 http://link.aps.org/doi/10.1103/PhysRevB.84.184407 184407 Magnetism Magnetism Clusters and Magnetic Anchoring Points in (Ga,Fe)N Condensed Magnetic Semiconductors http://link.aps.org/doi/10.1103/PhysRevLett.107.196401 Author(s): Francesco Filippone, Giuseppe Mattioli, Paola Alippi, and Aldo Amore Bonapasta<br/><p>The stability and magnetic properties of Fe clusters in the (Ga,Fe)N magnetic semiconductor is investigated by using first-principles density functional theory and <span>local spin density+Hubbard</span> <span><span style="font-style: italic;">U</span></span> theoretical methods. The present results reveal the existence of ferrimagnetic clusters formed by three or ...</p><br/>[Phys. Rev. Lett. 107, 196401] Published Wed Nov 02, 2011 Author(s): Francesco Filippone, Giuseppe Mattioli, Paola Alippi, and Aldo Amore Bonapasta

The stability and magnetic properties of Fe clusters in the (Ga,Fe)N magnetic semiconductor is investigated by using first-principles density functional theory and local spin density+Hubbard U theoretical methods. The present results reveal the existence of ferrimagnetic clusters formed by three or ...

[Phys. Rev. Lett. 107, 196401] Published Wed Nov 02, 2011

]]> Clusters and Magnetic Anchoring Points in (Ga,Fe)N Condensed Magnetic Semiconductors Francesco Filippone, Giuseppe Mattioli, Paola Alippi, and Aldo Amore Bonapasta 2011-11-02T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevLett.107.196401 Phys. Rev. Lett. 107, 196401 (2011) article Physical Review Letters 107 19 2011-11-02T10:00:00-04:00 10.1103/PhysRevLett.107.196401 http://link.aps.org/doi/10.1103/PhysRevLett.107.196401 196401 Condensed Matter: Electronic Properties, etc. Condensed Matter: Electronic Properties, etc. Magnetic Linear Dichroism in the Angular Dependence of Core-Level Photoemission from (Ga,Mn)As Using Hard X Rays http://link.aps.org/doi/10.1103/PhysRevLett.107.197601 Author(s): K. W. Edmonds, G. van der Laan, N. R. S. Farley, R. P. Campion, B. L. Gallagher, C. T. Foxon, B. C. C. Cowie, S. Warren, and T. K. Johal<br/><p>We report a study of the electronic properties of the ferromagnetic semiconductor (Ga,Mn)As using magnetic linear dichroism in the angular dependence of Mn <span>2<span style="font-style: italic;">p</span></span> photoemission under hard x-ray excitation. Bulk plasmon loss satellites demonstrate that the probed Mn ions are incorporated deep within the ...</p><br/>[Phys. Rev. Lett. 107, 197601] Published Tue Nov 01, 2011 Author(s): K. W. Edmonds, G. van der Laan, N. R. S. Farley, R. P. Campion, B. L. Gallagher, C. T. Foxon, B. C. C. Cowie, S. Warren, and T. K. Johal

We report a study of the electronic properties of the ferromagnetic semiconductor (Ga,Mn)As using magnetic linear dichroism in the angular dependence of Mn 2p photoemission under hard x-ray excitation. Bulk plasmon loss satellites demonstrate that the probed Mn ions are incorporated deep within the ...

[Phys. Rev. Lett. 107, 197601] Published Tue Nov 01, 2011

]]> Magnetic Linear Dichroism in the Angular Dependence of Core-Level Photoemission from (Ga,Mn)As Using Hard X Rays K. W. Edmonds, G. van der Laan, N. R. S. Farley, R. P. Campion, B. L. Gallagher, C. T. Foxon, B. C. C. Cowie, S. Warren, and T. K. Johal 2011-11-01T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevLett.107.197601 Phys. Rev. Lett. 107, 197601 (2011) article Physical Review Letters 107 19 2011-11-01T10:00:00-04:00 10.1103/PhysRevLett.107.197601 http://link.aps.org/doi/10.1103/PhysRevLett.107.197601 197601 Condensed Matter: Electronic Properties, etc. Condensed Matter: Electronic Properties, etc. Diffusion Thermopower of (Ga,Mn)As/GaAs Tunnel Junctions http://link.aps.org/doi/10.1103/PhysRevLett.107.197201 Author(s): Ts. Naydenova, P. Dürrenfeld, K. Tavakoli, N. Pégard, L. Ebel, K. Pappert, K. Brunner, C. Gould, and L. W. Molenkamp<br/><p>We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and th...</p><br/>[Phys. Rev. Lett. 107, 197201] Published Mon Oct 31, 2011 Author(s): Ts. Naydenova, P. Dürrenfeld, K. Tavakoli, N. Pégard, L. Ebel, K. Pappert, K. Brunner, C. Gould, and L. W. Molenkamp

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and th...

[Phys. Rev. Lett. 107, 197201] Published Mon Oct 31, 2011

]]> Diffusion Thermopower of (Ga,Mn)As/GaAs Tunnel Junctions Ts. Naydenova, P. Dürrenfeld, K. Tavakoli, N. Pégard, L. Ebel, K. Pappert, K. Brunner, C. Gould, and L. W. Molenkamp 2011-10-31T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevLett.107.197201 Phys. Rev. Lett. 107, 197201 (2011) article Physical Review Letters 107 19 2011-10-31T10:00:00-04:00 10.1103/PhysRevLett.107.197201 http://link.aps.org/doi/10.1103/PhysRevLett.107.197201 197201 Condensed Matter: Electronic Properties, etc. Condensed Matter: Electronic Properties, etc. Optical Pumping and a Nondestructive Readout of a Single Magnetic Impurity Spin in an InAs/GaAs Quantum Dot http://link.aps.org/doi/10.1103/PhysRevLett.107.197402 Author(s): E. Baudin, E. Benjamin, A. Lemaître, and O. Krebs<br/><p>We report on the resonant optical pumping of the <span>|±1⟩</span> spin states of a single Mn dopant in an <span>InAs/GaAs</span> quantum dot which is embedded in a charge tunable device. The experiment relies on a <span><span style="font-style: italic;">W</span></span> scheme of transitions reached when a suitable longitudinal magnetic field is applied. The optical pumping is ...</p><br/>[Phys. Rev. Lett. 107, 197402] Published Mon Oct 31, 2011 Author(s): E. Baudin, E. Benjamin, A. Lemaître, and O. Krebs

We report on the resonant optical pumping of the |±1⟩ spin states of a single Mn dopant in an InAs/GaAs quantum dot which is embedded in a charge tunable device. The experiment relies on a W scheme of transitions reached when a suitable longitudinal magnetic field is applied. The optical pumping is ...

[Phys. Rev. Lett. 107, 197402] Published Mon Oct 31, 2011

]]> Optical Pumping and a Nondestructive Readout of a Single Magnetic Impurity Spin in an InAs/GaAs Quantum Dot E. Baudin, E. Benjamin, A. Lemaître, and O. Krebs 2011-10-31T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevLett.107.197402 Phys. Rev. Lett. 107, 197402 (2011) article Physical Review Letters 107 19 2011-10-31T10:00:00-04:00 10.1103/PhysRevLett.107.197402 http://link.aps.org/doi/10.1103/PhysRevLett.107.197402 197402 Condensed Matter: Electronic Properties, etc. Condensed Matter: Electronic Properties, etc. Identification of Different Electron Screening Behavior Between the Bulk and Surface of (Ga,Mn)As http://link.aps.org/doi/10.1103/PhysRevLett.107.187203 Author(s): J. Fujii, M. Sperl, S. Ueda, K. Kobayashi, Y. Yamashita, M. Kobata, P. Torelli, F. Borgatti, M. Utz, C. S. Fadley, A. X. Gray, G. Monaco, C. H. Back, G. van der Laan, and G. Panaccione<br/><p>We report x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of both temperature and Mn doping. Analysis of Mn <span>2<span style="font-style: italic;">p</span></span> core level spectra reveals the presence of a distinct electronic screening channel in the bulk, hitherto undetected in more surface sensitive analysis. Comparison ...</p><br/>[Phys. Rev. Lett. 107, 187203] Published Thu Oct 27, 2011 Author(s): J. Fujii, M. Sperl, S. Ueda, K. Kobayashi, Y. Yamashita, M. Kobata, P. Torelli, F. Borgatti, M. Utz, C. S. Fadley, A. X. Gray, G. Monaco, C. H. Back, G. van der Laan, and G. Panaccione

We report x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of both temperature and Mn doping. Analysis of Mn 2p core level spectra reveals the presence of a distinct electronic screening channel in the bulk, hitherto undetected in more surface sensitive analysis. Comparison ...

[Phys. Rev. Lett. 107, 187203] Published Thu Oct 27, 2011

]]> Identification of Different Electron Screening Behavior Between the Bulk and Surface of (Ga,Mn)As J. Fujii, M. Sperl, S. Ueda, K. Kobayashi, Y. Yamashita, M. Kobata, P. Torelli, F. Borgatti, M. Utz, C. S. Fadley, A. X. Gray, G. Monaco, C. H. Back, G. van der Laan, and G. Panaccione 2011-10-27T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevLett.107.187203 Phys. Rev. Lett. 107, 187203 (2011) article Physical Review Letters 107 18 2011-10-27T10:00:00-04:00 10.1103/PhysRevLett.107.187203 http://link.aps.org/doi/10.1103/PhysRevLett.107.187203 187203 Condensed Matter: Electronic Properties, etc. Condensed Matter: Electronic Properties, etc. Electronic and magnetic properties of (Zn_{1−x}V_{x})O diluted magnetic semiconductors elucidated from x-ray magnetic circular dichroism at V L_{2,3} edges and first-principles calculations http://link.aps.org/doi/10.1103/PhysRevB.84.134421 Author(s): L. V. Bekenov, V. N. Antonov, S. Ostanin, A. N. Yaresko, I. V. Maznichenko, W. Hergert, I. Mertig, and A. Ernst<br/><p>The electronic structure of (Zn,V)O dilute magnetic semiconductors (DMSs) was investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band structure method and the Korringa-Kohn-Rostoker Green’s function approach within the local spin-density ap...</p><br/>[Phys. Rev. B 84, 134421] Published Mon Oct 17, 2011 Author(s): L. V. Bekenov, V. N. Antonov, S. Ostanin, A. N. Yaresko, I. V. Maznichenko, W. Hergert, I. Mertig, and A. Ernst

The electronic structure of (Zn,V)O dilute magnetic semiconductors (DMSs) was investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band structure method and the Korringa-Kohn-Rostoker Green’s function approach within the local spin-density ap...

[Phys. Rev. B 84, 134421] Published Mon Oct 17, 2011

]]> Electronic and magnetic properties of (Zn_{1−x}V_{x})O diluted magnetic semiconductors elucidated from x-ray magnetic circular dichroism at V L_{2,3} edges and first-principles calculations L. V. Bekenov, V. N. Antonov, S. Ostanin, A. N. Yaresko, I. V. Maznichenko, W. Hergert, I. Mertig, and A. Ernst 2011-10-17T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.134421 Phys. Rev. B 84, 134421 (2011) article Physical Review B 84 13 2011-10-17T10:00:00-04:00 10.1103/PhysRevB.84.134421 http://link.aps.org/doi/10.1103/PhysRevB.84.134421 134421 Magnetism Magnetism Ferromagnetic interaction between Cu ions in the bulk region of Cu-doped ZnO nanowires http://link.aps.org/doi/10.1103/PhysRevB.84.153203 Author(s): T. Kataoka, Y. Yamazaki, V. R. Singh, A. Fujimori, F.-H. Chang, H.-J. Lin, D. J. Huang, C. T. Chen, G. Z. Xing, J. W. Seo, C. Panagopoulos, and T. Wu<br/><p>We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [ G. Z. Xing <span style="font-style: italic;">et al.</span> <a href="http://dx.doi.org/10.1002/adma.200703149"> Adv. Mater. <span style="font-weight: bold;">20</span> 3521 (2008)</a>], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and x-ray magnet...</p><br/>[Phys. Rev. B 84, 153203] Published Fri Oct 14, 2011 Author(s): T. Kataoka, Y. Yamazaki, V. R. Singh, A. Fujimori, F.-H. Chang, H.-J. Lin, D. J. Huang, C. T. Chen, G. Z. Xing, J. W. Seo, C. Panagopoulos, and T. Wu

We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [ G. Z. Xing et al. Adv. Mater. 20 3521 (2008)], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and x-ray magnet...

[Phys. Rev. B 84, 153203] Published Fri Oct 14, 2011

]]> Ferromagnetic interaction between Cu ions in the bulk region of Cu-doped ZnO nanowires T. Kataoka, Y. Yamazaki, V. R. Singh, A. Fujimori, F.-H. Chang, H.-J. Lin, D. J. Huang, C. T. Chen, G. Z. Xing, J. W. Seo, C. Panagopoulos, and T. Wu 2011-10-14T10:00:00-04:00 Personal use only, all commercial or other reuse prohibited doi:10.1103/PhysRevB.84.153203 Phys. Rev. B 84, 153203 (2011) article Physical Review B 84 15 2011-10-14T10:00:00-04:00 10.1103/PhysRevB.84.153203 http://link.aps.org/doi/10.1103/PhysRevB.84.153203 153203 Semiconductors I: bulk Semiconductors I: bulk