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<title>Physical Review: Magnetic Semiconductors</title>
<link>http://prl.aps.org/</link>
<description>Magnetic Semiconductor articles published in Physical Review Journals</description>
<dc:language>en-us</dc:language>
<dc:rights>Copyright (c) 2007, The American Physical Society</dc:rights>
<dc:date>2008-04-29T02:30:17-05:00</dc:date>
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<item rdf:about="http://link.aps.org/abstract/PRB/v77/e134433">
<title>Linear response theoretical study of the exchange interactions in Mn-doped ScN: Effects of disorder, band gap, and doping</title>
<link>http://link.aps.org/abstract/PRB/v77/e134433</link>
<description>Author(s): A. Herwadkar, W. R. L. Lambrecht, and M. van Schilfgaarde&lt;br/&gt;Linear response calculations of the magnetic exchange interactions in Mn-doped ScN were carried out in the rigid-spin approximation by using the muffin-tin-orbital Green’s function method. They show that the exchange interactions are long range and strongly affected by disorder, band gap correction...&lt;br/&gt;[Phys. Rev. B 77, 134433] Published Thu Apr 17, 2008</description>
<dc:source>Phys. Rev. B 77, 134433</dc:source>
<dc:creator>Aditi Herwadkar</dc:creator>
<dc:creator>Walter R. L. Lambrecht</dc:creator>
<dc:creator>Mark van Schilfgaarde</dc:creator>
<dc:date>2008-04-17T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.134433</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-17T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>134433</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-17T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155207">
<title>Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering</title>
<link>http://link.aps.org/abstract/PRB/v77/e155207</link>
<description>Author(s): W. G. Wang et al.&lt;br/&gt;Chromium doped zinc telluride thin films with various doping concentrations are fabricated by magnetron sputtering. These films are ferromagnetic and the Curie temperature increases with Cr concentration. X-ray diffraction, transmission electron microscopy, and magnetic circular dichroism character...&lt;br/&gt;[Phys. Rev. B 77, 155207] Published Tue Apr 15, 2008</description>
<dc:source>Phys. Rev. B 77, 155207</dc:source>
<dc:creator>W. G. Wang</dc:creator>
<dc:creator>K. J. Yee</dc:creator>
<dc:creator>D. H. Kim</dc:creator>
<dc:creator>K. J. Han</dc:creator>
<dc:creator>X. R. Wang</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-15T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155207</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-15T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155207</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-02-14T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e157201">
<title>Absence of Intrinsic Ferromagnetic Interactions of Isolated and Paired Co Dopant Atoms in Zn_{1-x}Co_{x}O with High Structural Perfection</title>
<link>http://link.aps.org/abstract/PRL/v100/e157201</link>
<description>Author(s): A. Ney et al.&lt;br/&gt;We report element specific structural and magnetic investigations on Zn_{1-x}Co_{x}O epitaxial films using synchrotron radiation. Co dopants exclusively occupy Zn sites as revealed by x-ray linear dichroism having an unprecedented degree of structural perfection. Comparative magnetic field dependen...&lt;br/&gt;[Phys. Rev. Lett. 100, 157201] Published Tue Apr 15, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 157201</dc:source>
<dc:creator>A. Ney</dc:creator>
<dc:creator>K. Ollefs</dc:creator>
<dc:creator>S. Ye</dc:creator>
<dc:creator>T. Kammermeier</dc:creator>
<dc:creator>V. Ney</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-15T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.157201</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-04-15T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>157201</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-29T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e165204">
<title>Ferromagnetic resonance of Ga_{0.93}Mn_{0.07}As thin films with constant Mn and variable free-hole concentrations</title>
<link>http://link.aps.org/abstract/PRB/v77/e165204</link>
<description>Author(s): Kh. Khazen et al.&lt;br/&gt;The magnetic properties of ferromagnetic Ga_{0.93}Mn_{0.07}As thin films have been investigated by X-band ferromagnetic resonance (FMR) spectroscopy as a function of hole concentration. The hole concentration [p] was varied from 10^{21}to&lt;10^{18}cm^{−3} by hydrogen passivation. We determined the...&lt;br/&gt;[Phys. Rev. B 77, 165204] Published Fri Apr 11, 2008</description>
<dc:source>Phys. Rev. B 77, 165204</dc:source>
<dc:creator>Kh. Khazen</dc:creator>
<dc:creator>H. J. von Bardeleben</dc:creator>
<dc:creator>J. L. Cantin</dc:creator>
<dc:creator>L. Thevenard</dc:creator>
<dc:creator>L. Largeau</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-04-11T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.165204</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>16</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-11T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>165204</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-03T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e134424">
<title>Electron magnetic resonance study of transition-metal magnetic nanoclusters embedded in metal oxides</title>
<link>http://link.aps.org/abstract/PRB/v77/e134424</link>
<description>Author(s): V. Castel and C. Brosseau&lt;br/&gt;Here, we report on the results of an electron magnetic resonance (EMR) study of a series of Ni∕ZnO and Ni∕γ-Fe_{2}O_{3} nanocomposites (NCs) to probe the resonance features of ferromagnetic (FM) Ni nanoclusters embedded in metal oxides. Interest in these NCs stems from the fact that they are promis...&lt;br/&gt;[Phys. Rev. B 77, 134424] Published Thu Apr 10, 2008</description>
<dc:source>Phys. Rev. B 77, 134424</dc:source>
<dc:creator>Vincent Castel</dc:creator>
<dc:creator>Christian Brosseau</dc:creator>
<dc:date>2008-04-10T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.134424</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>13</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-10T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>134424</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-25T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155201">
<title>First-principles study of transition metal impurities in Si</title>
<link>http://link.aps.org/abstract/PRB/v77/e155201</link>
<description>Author(s): Z. Z. Zhang, B. Partoens, K. Chang, and F. M. Peeters&lt;br/&gt;By using ab initio electronic structure calculations within density functional theory, we study the structural, electronic, and magnetic properties of Si doped with a transition metal impurity. We consider the transition metals of the 3d series V, Cr, Mn, Fe, Co, and Ni. To get insight into the lev...&lt;br/&gt;[Phys. Rev. B 77, 155201] Published Wed Apr 02, 2008</description>
<dc:source>Phys. Rev. B 77, 155201</dc:source>
<dc:creator>Z. Z. Zhang</dc:creator>
<dc:creator>B. Partoens</dc:creator>
<dc:creator>Kai Chang</dc:creator>
<dc:creator>F. M. Peeters</dc:creator>
<dc:date>2008-04-02T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155201</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-02T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155201</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-06-25T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155202">
<title>Density-functional study of bulk silicon lightly doped with manganese</title>
<link>http://link.aps.org/abstract/PRB/v77/e155202</link>
<description>Author(s): B. R. Sahu, S. K. Banerjee, and L. Kleinman&lt;br/&gt;With only a 0.8% concentration of Mn impurities, Si has been found to be ferromagnetic up to well above 400K. Using the generalized gradient approximation, both with and without a Hubbard U, for exchange and correlation, we have calculated the properties of a 250 atom Si supercell with two Mn impur...&lt;br/&gt;[Phys. Rev. B 77, 155202] Published Wed Apr 02, 2008</description>
<dc:source>Phys. Rev. B 77, 155202</dc:source>
<dc:creator>Bhagawan R. Sahu</dc:creator>
<dc:creator>Sanjay K. Banerjee</dc:creator>
<dc:creator>Leonard Kleinman</dc:creator>
<dc:date>2008-04-02T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155202</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-02T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155202</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-08-29T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e155203">
<title>Planar Hall effect and uniaxial in-plane magnetic anisotropy in Mn δ-doped GaAs∕p-AlGaAs heterostructures</title>
<link>http://link.aps.org/abstract/PRB/v77/e155203</link>
<description>Author(s): A. M. Nazmul, H. T. Lin, S. N. Tran, S. Ohya, and M. Tanaka&lt;br/&gt;We have studied the planar Hall effect (PHE) in a Mn δ-doped GaAs-based heterostructure consisting of Mn δ-doped GaAs and p-type AlGaAs. We observe a distinct and large PHE and a specific in-plane [110] uniaxial magnetic anisotropy below the ferromagnetic transition temperature (T_{C}). This uniaxi...&lt;br/&gt;[Phys. Rev. B 77, 155203] Published Wed Apr 02, 2008</description>
<dc:source>Phys. Rev. B 77, 155203</dc:source>
<dc:creator>A. M. Nazmul</dc:creator>
<dc:creator>H. T. Lin</dc:creator>
<dc:creator>S. N. Tran</dc:creator>
<dc:creator>S. Ohya</dc:creator>
<dc:creator>M. Tanaka</dc:creator>
<dc:date>2008-04-02T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.155203</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>15</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-04-02T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>155203</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2006-06-01T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e094436">
<title>First-principles theory of magnetically driven anomalous ordering in bcc Fe-Cr alloys</title>
<link>http://link.aps.org/abstract/PRB/v77/e094436</link>
<description>Author(s): A. V. Ruban, P. A. Korzhavyi, and B. Johansson&lt;br/&gt;Ab initio perturbation-theory techniques, such as the generalized perturbation method and magnetic force theorem, are used to determine the Heisenberg exchange interaction parameters and the effective cluster interactions in Fe-rich bcc Fe-Cr alloys in different magnetic states. We establish a dire...&lt;br/&gt;[Phys. Rev. B 77, 094436] Published Fri Mar 28, 2008</description>
<dc:source>Phys. Rev. B 77, 094436</dc:source>
<dc:creator>A. V. Ruban</dc:creator>
<dc:creator>P. A. Korzhavyi</dc:creator>
<dc:creator>B. Johansson</dc:creator>
<dc:date>2008-03-28T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.094436</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>9</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-28T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>094436</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-14T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e127203">
<title>Ferromagnetism in GaN:Gd: A Density Functional Theory Study</title>
<link>http://link.aps.org/abstract/PRL/v100/e127203</link>
<description>Author(s): L. Liu, P. Y. Yu, Z. Ma, and S. S. Mao&lt;br/&gt;First-principle calculations of the electronic structure and magnetic interaction of GaN:Gd have been performed within the generalized gradient approximation (GGA) of the density functional theory with the on-site Coulomb energy U taken into account (also referred to as GGA+U). The ferromagnetic p-...&lt;br/&gt;[Phys. Rev. Lett. 100, 127203] Published Fri Mar 28, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 127203</dc:source>
<dc:creator>Lei Liu</dc:creator>
<dc:creator>Peter Y. Yu</dc:creator>
<dc:creator>Zhixun Ma</dc:creator>
<dc:creator>Samuel S. Mao</dc:creator>
<dc:date>2008-03-28T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.127203</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>12</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-03-28T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>127203</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-09-24T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e094434">
<title>Creep of current-driven domain-wall lines: Effects of intrinsic versus extrinsic pinning</title>
<link>http://link.aps.org/abstract/PRB/v77/e094434</link>
<description>Author(s): R. A. Duine and C. M. Smith&lt;br/&gt;We present a model for the current-driven motion of a magnetic domain-wall line, in which the dynamics of the domain wall is equivalent to that of an overdamped vortex line in an anisotropic pinning potential. This potential has both extrinsic contributions due to, e.g., sample inhomogeneities, and...&lt;br/&gt;[Phys. Rev. B 77, 094434] Published Thu Mar 27, 2008</description>
<dc:source>Phys. Rev. B 77, 094434</dc:source>
<dc:creator>R. A. Duine</dc:creator>
<dc:creator>C. Morais Smith</dc:creator>
<dc:date>2008-03-27T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.094434</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>9</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-27T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>094434</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-02-04T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e115211">
<title>Transport in the metallic regime of Mn-doped III-V semiconductors</title>
<link>http://link.aps.org/abstract/PRB/v77/e115211</link>
<description>Author(s): L.-F. Arsenault, B. Movaghar, P. Desjardins, and A. Yelon&lt;br/&gt;The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo formalism. Both normal and anomalous contributions to the Hall effect are examined. We use a simple model density of state...&lt;br/&gt;[Phys. Rev. B 77, 115211] Published Wed Mar 26, 2008</description>
<dc:source>Phys. Rev. B 77, 115211</dc:source>
<dc:creator>Louis-François Arsenault</dc:creator>
<dc:creator>B. Movaghar</dc:creator>
<dc:creator>P. Desjardins</dc:creator>
<dc:creator>A. Yelon</dc:creator>
<dc:date>2008-03-26T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.115211</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>11</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-26T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>115211</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-08-07T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e121303">
<title>Precession of localized spins in an inhomogeneous magnetic fringe field</title>
<link>http://link.aps.org/abstract/PRB/v77/e121303</link>
<description>Author(s): S. Halm et al.&lt;br/&gt;The influence of inhomogeneity of a magnetic fringe field on the coherent spin dynamics of localized manganese impurities in a diluted magnetic semiconductor quantum well is studied by time-resolved Kerr rotation. It is shown that the spatially varying fringe field leads to a temporally varying ens...&lt;br/&gt;[Phys. Rev. B 77, 121303] Published Mon Mar 24, 2008</description>
<dc:source>Phys. Rev. B 77, 121303</dc:source>
<dc:creator>S. Halm</dc:creator>
<dc:creator>P. E. Hohage</dc:creator>
<dc:creator>J. Nannen</dc:creator>
<dc:creator>G. Bacher</dc:creator>
<dc:creator>J. Puls</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-03-24T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.121303</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>12</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-24T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>121303</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2008-01-14T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e117204">
<title>Defect-Induced Intrinsic Magnetism in Wide-Gap III Nitrides</title>
<link>http://link.aps.org/abstract/PRL/v100/e117204</link>
<description>Author(s): P. Dev, Y. Xue, and P. Zhang&lt;br/&gt;Cation-vacancy induced intrinsic magnetism in GaN and BN is investigated by employing density-functional theory based electronic structure methods. The strong localization of defect states favors spontaneous spin polarization and local moment formation. A neutral cation vacancy in GaN or BN leads t...&lt;br/&gt;[Phys. Rev. Lett. 100, 117204] Published Wed Mar 19, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 117204</dc:source>
<dc:creator>Pratibha Dev</dc:creator>
<dc:creator>Yu Xue</dc:creator>
<dc:creator>Peihong Zhang</dc:creator>
<dc:date>2008-03-19T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.117204</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>11</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-03-19T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>117204</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-06T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e115318">
<title>Effect of charge manipulation on scanning tunneling spectra of single Mn acceptors in InAs</title>
<link>http://link.aps.org/abstract/PRB/v77/e115318</link>
<description>Author(s): F. Marczinowski, J. Wiebe, F. Meier, K. Hashimoto, and R. Wiesendanger&lt;br/&gt;We present scanning tunneling spectroscopy measurements on Mn-doped InAs at low temperatures. In the range of conduction band tunneling, we observe a ring of increased differential conductance around each individual Mn acceptor. With increasing bias voltage, the ring shrinks and finally collapses. ...&lt;br/&gt;[Phys. Rev. B 77, 115318] Published Thu Mar 13, 2008</description>
<dc:source>Phys. Rev. B 77, 115318</dc:source>
<dc:creator>Felix Marczinowski</dc:creator>
<dc:creator>Jens Wiebe</dc:creator>
<dc:creator>Focko Meier</dc:creator>
<dc:creator>Katsushi Hashimoto</dc:creator>
<dc:creator>Roland Wiesendanger</dc:creator>
<dc:date>2008-03-13T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.115318</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>11</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-13T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>115318</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-04T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e107201">
<title>Anomalous Hall Effect in the (In,Mn)Sb Dilute Magnetic Semiconductor</title>
<link>http://link.aps.org/abstract/PRL/v100/e107201</link>
<description>Author(s): G. Mihály et al.&lt;br/&gt;High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also sho...&lt;br/&gt;[Phys. Rev. Lett. 100, 107201] Published Wed Mar 12, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 107201</dc:source>
<dc:creator>G. Mihály</dc:creator>
<dc:creator>M. Csontos</dc:creator>
<dc:creator>S. Bordács</dc:creator>
<dc:creator>I. Kézsmárki</dc:creator>
<dc:creator>T. Wojtowicz</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-03-12T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.107201</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>10</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-03-12T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>107201</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-10T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e104416">
<title>High temperature ferromagnetism in single crystalline dilute Fe-doped BaTiO_{3}</title>
<link>http://link.aps.org/abstract/PRB/v77/e104416</link>
<description>Author(s): S. Ray et al.&lt;br/&gt;We report the observation of room temperature ferromagnetism in high quality, single crystalline dilute Fe-doped BaTiO_{3}. The large equilibrium solubility of Fe ions in the matrix refutes uncertainties about secondary phase magnetism, which has often eclipsed this interesting field of research. W...&lt;br/&gt;[Phys. Rev. B 77, 104416] Published Tue Mar 11, 2008</description>
<dc:source>Phys. Rev. B 77, 104416</dc:source>
<dc:creator>Sugata Ray</dc:creator>
<dc:creator>Priya Mahadevan</dc:creator>
<dc:creator>Suman Mandal</dc:creator>
<dc:creator>S. R. Krishnakumar</dc:creator>
<dc:creator>Carlos Seiti Kuroda</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-03-11T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.104416</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>10</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-11T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>104416</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-07T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e115310">
<title>Theory of magnetism in diluted magnetic semiconductor nanocrystals</title>
<link>http://link.aps.org/abstract/PRB/v77/e115310</link>
<description>Author(s): S.-J. Cheng&lt;br/&gt;We present a theoretical investigation of magnetism in II-VI diluted magnetic semiconductor nanocrystals (NCs). The energy spectra, magnetizations, and magnetic susceptibilities of singly charged NCs with few substitutional magnetic Mn^{2+} ions are studied as functions of NC size, magnetic dopant ...&lt;br/&gt;[Phys. Rev. B 77, 115310] Published Mon Mar 10, 2008</description>
<dc:source>Phys. Rev. B 77, 115310</dc:source>
<dc:creator>Shun-Jen Cheng</dc:creator>
<dc:date>2008-03-10T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.115310</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>11</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-10T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>115310</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-09-22T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e125206">
<title>Evolution of magnetic circular dichroism of pure ZnTe in magnetic field: Spectral similarity between undoped and Cr-doped ZnTe</title>
<link>http://link.aps.org/abstract/PRB/v77/e125206</link>
<description>Author(s): H. Weng, J. Dong, T. Fukumura, M. Kawasaki, and Y. Kawazoe&lt;br/&gt;Magnetic circular dichroism (MCD) spectra of pure ZnTe in various external magnetic field have been studied with first-principles calculations. By applying magnetic field on undoped semiconductor, the effects of spin splitting in host’s bands due to s,p-d exchange interactions in diluted magnetic s...&lt;br/&gt;[Phys. Rev. B 77, 125206] Published Mon Mar 10, 2008</description>
<dc:source>Phys. Rev. B 77, 125206</dc:source>
<dc:creator>Hongming Weng</dc:creator>
<dc:creator>Jinming Dong</dc:creator>
<dc:creator>Tomoteru Fukumura</dc:creator>
<dc:creator>Masashi Kawasaki</dc:creator>
<dc:creator>Yoshiyuki Kawazoe</dc:creator>
<dc:date>2008-03-10T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.125206</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>12</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-10T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>125206</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-06T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e113304">
<title>Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study</title>
<link>http://link.aps.org/abstract/PRB/v77/e113304</link>
<description>Author(s): J. Li, S.-H. Wei, S.-S. Li, and J.-B. Xia&lt;br/&gt;Doping difficulty in semiconductor nanocrystals has been observed and its origin is currently under debate. It is not clear whether this phenomenon is energetic or depends on the growth kinetics. Using first-principles method, we show that the transition energies and defect formation energies of th...&lt;br/&gt;[Phys. Rev. B 77, 113304] Published Fri Mar 07, 2008</description>
<dc:source>Phys. Rev. B 77, 113304</dc:source>
<dc:creator>Jingbo Li</dc:creator>
<dc:creator>Su-Huai Wei</dc:creator>
<dc:creator>Shu-Shen Li</dc:creator>
<dc:creator>Jian-Bai Xia</dc:creator>
<dc:date>2008-03-07T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.113304</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>11</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-07T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>113304</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-19T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e121201">
<title>Magnetic impurities and itinerant carriers in doped SrTiO_{3}: Anomalous Hall resistivity</title>
<link>http://link.aps.org/abstract/PRB/v77/e121201</link>
<description>Author(s): D. Satoh, K. Okamoto, and T. Katsufuji&lt;br/&gt;We studied perovskite SrTiO_{3} into which magnetic impurities (Cr or V) and itinerant carriers (electrons in the Ti3d band) are introduced. We found that the itinerancy of the electrons on the magnetic impurities and magnetic properties of the compounds depend on the species of the transition meta...&lt;br/&gt;[Phys. Rev. B 77, 121201] Published Thu Mar 06, 2008</description>
<dc:source>Phys. Rev. B 77, 121201</dc:source>
<dc:creator>D. Satoh</dc:creator>
<dc:creator>K. Okamoto</dc:creator>
<dc:creator>T. Katsufuji</dc:creator>
<dc:date>2008-03-06T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.121201</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>12</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-03-06T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>121201</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-12T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e085325">
<title>Surface effects on the energetic and spintronic properties of InP nanowires diluted with Mn: First-principles calculations</title>
<link>http://link.aps.org/abstract/PRB/v77/e085325</link>
<description>Author(s): T. M. Schmidt&lt;br/&gt;First-principles calculations have been used to investigate the impurity stability and the magnetic properties of Mn doped InP nanowires. The results reveal that the surface of the nanocrystals play a fundamental role on the impurity stability and on the magnetic properties of InP nanowires diluted...&lt;br/&gt;[Phys. Rev. B 77, 085325] Published Wed Feb 27, 2008</description>
<dc:source>Phys. Rev. B 77, 085325</dc:source>
<dc:creator>T. M. Schmidt</dc:creator>
<dc:date>2008-02-27T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.085325</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>8</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-02-27T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>085325</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-09-21T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e085321">
<title>Femtosecond control of the magnetization in ferromagnetic semiconductors</title>
<link>http://link.aps.org/abstract/PRB/v77/e085321</link>
<description>Author(s): J. Chovan and I. E. Perakis&lt;br/&gt;We develop a theory of collective spin dynamics triggered by ultrafast optical excitation of ferromagnetic semiconductors. Using the density matrix equations of motion in the mean field approximation and including magnetic anisotropy and hole spin dephasing effects, we predict the development of a ...&lt;br/&gt;[Phys. Rev. B 77, 085321] Published Tue Feb 26, 2008</description>
<dc:source>Phys. Rev. B 77, 085321</dc:source>
<dc:creator>J. Chovan</dc:creator>
<dc:creator>I. E. Perakis</dc:creator>
<dc:date>2008-02-26T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.085321</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>8</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-02-26T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>085321</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-13T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e075328">
<title>Anisotropic spatial structure of deep acceptor states in GaAs and GaP</title>
<link>http://link.aps.org/abstract/PRB/v77/e075328</link>
<description>Author(s): C. Çelebi et al.&lt;br/&gt;Cross-sectional scanning tunneling microscopy is used to identify the origin of the anisotropic electronic structure of acceptor states in III–V semiconductors. The density of states introduced by a hole bound to an individual Cd acceptor in GaP is spatially mapped at room temperature. Similar to t...&lt;br/&gt;[Phys. Rev. B 77, 075328] Published Mon Feb 25, 2008</description>
<dc:source>Phys. Rev. B 77, 075328</dc:source>
<dc:creator>C. Çelebi</dc:creator>
<dc:creator>P. M. Koenraad</dc:creator>
<dc:creator>A. Yu. Silov</dc:creator>
<dc:creator>W. Van Roy</dc:creator>
<dc:creator>A. M. Monakhov</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-02-25T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.075328</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>7</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-02-25T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>075328</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-11-14T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e085208">
<title>Hole states in wide band-gap diluted magnetic semiconductors and oxides</title>
<link>http://link.aps.org/abstract/PRB/v77/e085208</link>
<description>Author(s): T. Dietl&lt;br/&gt;Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The strong coupling between valence-band holes and localized spins gives rise to a midgap Zhang–Rice-like state, to a sign reversal of the apparent p-d ...&lt;br/&gt;[Phys. Rev. B 77, 085208] Published Mon Feb 25, 2008</description>
<dc:source>Phys. Rev. B 77, 085208</dc:source>
<dc:creator>Tomasz Dietl</dc:creator>
<dc:date>2008-02-25T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors I: bulk</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.085208</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>8</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-02-25T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>085208</prism:startingPage>
<prism:section>Semiconductors I: bulk</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-12-02T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e073306">
<title>Quenched magnetic moment in Mn-doped amorphous Si films</title>
<link>http://link.aps.org/abstract/PRB/v77/e073306</link>
<description>Author(s): L. Zeng et al.&lt;br/&gt;The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a-Mn_{x}Si_{1−x}) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5×10^{−3} up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs bec...&lt;br/&gt;[Phys. Rev. B 77, 073306] Published Tue Feb 19, 2008</description>
<dc:source>Phys. Rev. B 77, 073306</dc:source>
<dc:creator>Li Zeng</dc:creator>
<dc:creator>E. Helgren</dc:creator>
<dc:creator>M. Rahimi</dc:creator>
<dc:creator>F. Hellman</dc:creator>
<dc:creator>R. Islam</dc:creator>
<dc:creator>et al.</dc:creator>
<dc:date>2008-02-19T00:00:00-05:00</dc:date>
<dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.073306</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>7</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-02-19T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>073306</prism:startingPage>
<prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-22T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e067202">
<title>Photoinduced Precession of Magnetization in Ferromagnetic (Ga,Mn)As</title>
<link>http://link.aps.org/abstract/PRL/v100/e067202</link>
<description>Author(s): Y. Hashimoto, S. Kobayashi, and H. Munekata&lt;br/&gt;Precession of magnetization induced by pulsed optical excitation is observed in a ferromagnetic semiconductor (Ga,Mn)As by time-resolved magneto-optical measurements. It appears as complicated oscillations of a polarization plane of linearly polarized probe pulses, but is reproduced by gyromagnetic...&lt;br/&gt;[Phys. Rev. Lett. 100, 067202] Published Wed Feb 13, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 067202</dc:source>
<dc:creator>Y. Hashimoto</dc:creator>
<dc:creator>S. Kobayashi</dc:creator>
<dc:creator>H. Munekata</dc:creator>
<dc:date>2008-02-13T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.067202</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>6</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-02-13T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>067202</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-07-11T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e067204">
<title>Origin of the Anomalous Magnetic Circular Dichroism Spectral Shape in Ferromagnetic Ga_{1-x}Mn_{x}As: Impurity Bands inside the Band Gap</title>
<link>http://link.aps.org/abstract/PRL/v100/e067204</link>
<description>Author(s): K. Ando, H. Saito, K. C. Agarwal, M. C. Debnath, and V. Zayets&lt;br/&gt;The electronic structure of a prototype dilute magnetic semiconductor (DMS), Ga_{1-x}Mn_{x}As, is studied by magnetic circular dichroism (MCD) spectroscopy. We prove that the optical transitions originated from impurity bands cause the strong positive MCD background. The MCD signal due to the E_{0}...&lt;br/&gt;[Phys. Rev. Lett. 100, 067204] Published Wed Feb 13, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 067204</dc:source>
<dc:creator>K. Ando</dc:creator>
<dc:creator>H. Saito</dc:creator>
<dc:creator>K. C. Agarwal</dc:creator>
<dc:creator>M. C. Debnath</dc:creator>
<dc:creator>V. Zayets</dc:creator>
<dc:date>2008-02-13T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Electronic Properties, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.067204</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>6</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-02-13T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>067204</prism:startingPage>
<prism:section>Condensed Matter: Electronic Properties, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-10-08T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRL/v100/e066101">
<title>Optimal Doping Control of Magnetic Semiconductors via Subsurfactant Epitaxy</title>
<link>http://link.aps.org/abstract/PRL/v100/e066101</link>
<description>Author(s): C. Zeng, Z. Zhang, K. van Benthem, M. F. Chisholm, and H. H. Weitering&lt;br/&gt;“Subsurfactant epitaxy” is established as a conceptually new approach for introducing manganese as a magnetic dopant into germanium. A kinetic pathway is devised in which the subsurface interstitial sites on Ge(100) are first selectively populated with Mn, while lateral diffusion and clustering on ...&lt;br/&gt;[Phys. Rev. Lett. 100, 066101] Published Tue Feb 12, 2008</description>
<dc:source>Phys. Rev. Lett. 100, 066101</dc:source>
<dc:creator>Changgan Zeng</dc:creator>
<dc:creator>Zhenyu Zhang</dc:creator>
<dc:creator>Klaus van Benthem</dc:creator>
<dc:creator>Matthew F. Chisholm</dc:creator>
<dc:creator>Hanno H. Weitering</dc:creator>
<dc:date>2008-02-12T00:00:00-05:00</dc:date>
<dc:subject>Condensed Matter: Structure, etc.</dc:subject>
<dc:identifier>10.1103/PhysRevLett.100.066101</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>6</prism:issueIdentifier>
<prism:volume>100</prism:volume>
<prism:publicationDate>2008-02-12T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review Letters</prism:publicationName>
<prism:startingPage>066101</prism:startingPage>
<prism:section>Condensed Matter: Structure, etc.</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-01-18T00:00:00-05:00</prism:receptionDate>
</item>

<item rdf:about="http://link.aps.org/abstract/PRB/v77/e064409">
<title>Magnetic circular dichroism in two-photon absorption and depth-resolved magnetic microscopy</title>
<link>http://link.aps.org/abstract/PRB/v77/e064409</link>
<description>Author(s): J. Seib and M. Fähnle&lt;br/&gt;The magnetic circular dichroism (MCD) for the 1s→3d two-photon excitation is calculated for a relativistic one-electron atom in an external magnetic field. The MCD in two-photon absorption is of the same order of magnitude as the MCD for the 2p→3d one-photon excitation for the model. Because the MC...&lt;br/&gt;[Phys. Rev. B 77, 064409] Published Fri Feb 08, 2008</description>
<dc:source>Phys. Rev. B 77, 064409</dc:source>
<dc:creator>J. Seib</dc:creator>
<dc:creator>M. Fähnle</dc:creator>
<dc:date>2008-02-08T00:00:00-05:00</dc:date>
<dc:subject>Magnetism</dc:subject>
<dc:identifier>10.1103/PhysRevB.77.064409</dc:identifier>
<dc:format>text/html</dc:format>
<dc:type>article</dc:type>
<prism:issueIdentifier>6</prism:issueIdentifier>
<prism:volume>77</prism:volume>
<prism:publicationDate>2008-02-08T00:00:00-05:00</prism:publicationDate>
<prism:publicationName>Physical Review B</prism:publicationName>
<prism:startingPage>064409</prism:startingPage>
<prism:section>Magnetism</prism:section>
<prism:category>abstract</prism:category>
<prism:receptionDate>2007-06-20T00:00:00-05:00</prism:receptionDate>
</item>

</rdf:RDF>