http://prl.aps.org/ Magnetic Semiconductor articles published in Physical Review Journals en-us Copyright (c) 2009 The American Physical Society 2009-11-22T20:25:18-05:00 assocpub@aps.org rss@aps.org hourly 4 2009-11-22T20:25:18-05:00 rss@aps.org http://link.aps.org/doi/10.1103/PhysRevB.80.205205 Author(s): C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W. G. Schmidt, M. Stutzmann, and M. S. Brandt<br/>The effects of hydrogenation on Mn-doped GaN are studied with electron-paramagnetic resonance (EPR), local vibrational mode (LVM) spectroscopy, and density-functional theory (DFT) calculations. With EPR, we find two distinct Mn complexes which, in particular, differ in the size and orientation of th...<br/>[Phys. Rev. B 80, 205205] Published Fri Nov 20, 2009 C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W. G. Schmidt, M. Stutzmann, and M. S. Brandt 2009-11-20T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205205 Phys. Rev. B 80, 205205 text/html article Physical Review B 80 20 2009-11-20T00:00:00-05:00 205205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193205 Author(s): P. M. Shmakov, A. P. Dmitriev, and V. Yu. Kachorovskii<br/>We study electron-spin dynamics in diluted magnetic quantum wells. The electrons are coupled by exchange interaction with randomly distributed magnetic ions polarized by magnetic field B . This coupling leads to both spin relaxation and spin decoherence. We demonstrate that even very small spatial f...<br/>[Phys. Rev. B 80, 193205] Published Thu Nov 19, 2009 P. M. Shmakov, A. P. Dmitriev, and V. Yu. Kachorovskii 2009-11-19T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193205 Phys. Rev. B 80, 193205 text/html article Physical Review B 80 19 2009-11-19T00:00:00-05:00 193205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.205204 Author(s): N. Jedrecy, H. J. von Bardeleben, and D. Demaille<br/>In order to provide insight into the magnetic properties of semiconductors with ferromagnetic inclusions, we present a thorough quantitative analysis of (Zn,Co)O films with high Co concentration, which give rise to high saturation magnetization values (∼110 kA m^{−1} ) at room temperature. F...<br/>[Phys. Rev. B 80, 205204] Published Thu Nov 19, 2009 N. Jedrecy, H. J. von Bardeleben, and D. Demaille 2009-11-19T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205204 Phys. Rev. B 80, 205204 text/html article Physical Review B 80 20 2009-11-19T00:00:00-05:00 205204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193204 Author(s): J.-P. Adam, N. Vernier, J. Ferré, A. Thiaville, V. Jeudy, A. Lemaître, L. Thevenard, and G. Faini<br/>Current-induced magnetic domain wall motion has been investigated in microtracks made from a ferromagnetic semiconductor (Ga,Mn)As thin film with perpendicular anisotropy. In order to reveal the nature of this motion, small fields were additionally applied. The results demonstrate that, when driven ...<br/>[Phys. Rev. B 80, 193204] Published Tue Nov 17, 2009 J.-P. Adam, N. Vernier, J. Ferré, A. Thiaville, V. Jeudy, A. Lemaître, L. Thevenard, and G. Faini 2009-11-17T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193204 Phys. Rev. B 80, 193204 text/html article Physical Review B 80 19 2009-11-17T00:00:00-05:00 193204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.201307 Author(s): Edward Likovich, Kasey Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth<br/>In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shif...<br/><img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/><br/> <img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 201307] Published Fri Nov 13, 2009 Edward Likovich, Kasey Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth 2009-11-13T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.201307 Phys. Rev. B 80, 201307 text/html article Physical Review B 80 20 2009-11-13T00:00:00-05:00 201307 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.201306 Author(s): I. A. Shelykh, T. C. H. Liew, and A. V. Kavokin<br/>In dilute magnetic semiconductor microcavities, exciton polaritons self-localize in real space due to the magnetic polaron effect. The resulting circularly polarized classical condensates can be transformed into superfluids by increasing the temperature and applying an external magnetic field. The i...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 201306] Published Tue Nov 10, 2009 I. A. Shelykh, T. C. H. Liew, and A. V. Kavokin 2009-11-10T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.201306 Phys. Rev. B 80, 201306 text/html article Physical Review B 80 20 2009-11-10T00:00:00-05:00 201306 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.205202 Author(s): F. V. Kyrychenko and C. A. Ullrich<br/>The static conductivity of the diluted magnetic semiconductor Ga_{1−x} Mn_{x} As is calculated using an equation of motion approach for the current response combined with time-dependent density-functional theory to account for Hartree and exchange interactions within the hole gas. We find that the...<br/>[Phys. Rev. B 80, 205202] Published Fri Nov 06, 2009 F. V. Kyrychenko and C. A. Ullrich 2009-11-06T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205202 Phys. Rev. B 80, 205202 text/html article Physical Review B 80 20 2009-11-06T00:00:00-05:00 205202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193303 Author(s): J. H. Versluis, A. V. Kimel, A. Kirilyuk, P. Grabs, F. Lehmann, G. Schmidt, L. W. Molenkamp, and Th. Rasing<br/>It is shown that when spin-polarized electrons are injected from a (Zn,Be,Mn)Se spin-aligner into GaAs, the magneto-optical Kerr effect from (Zn,Be,Mn)Se/GaAs spintronic device is strongly affected by a large electric-field at the (Zn,Be,Mn)Se/GaAs interface. This field causes the magneto-optical si...<br/>[Phys. Rev. B 80, 193303] Published Wed Nov 04, 2009 J. H. Versluis, A. V. Kimel, A. Kirilyuk, P. Grabs, F. Lehmann, G. Schmidt, L. W. Molenkamp, and Th. Rasing 2009-11-04T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193303 Phys. Rev. B 80, 193303 text/html article Physical Review B 80 19 2009-11-04T00:00:00-05:00 193303 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.184403 Author(s): Phivos Mavropoulos, Marjana Ležaić, and Stefan Blügel<br/>The magnetic state of nitrogen-doped MgO, with N substituting O at concentrations between 1% and the concentrated limit, is calculated with density-functional methods. The N atoms are found to be spin polarized with a moment of 1μ_{B} per nitrogen atom and to interact ferromagnetically via the doub...<br/>[Phys. Rev. B 80, 184403] Published Mon Nov 02, 2009 Phivos Mavropoulos, Marjana Ležaić, and Stefan Blügel 2009-11-02T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.184403 Phys. Rev. B 80, 184403 text/html article Physical Review B 80 18 2009-11-02T00:00:00-05:00 184403 Magnetism Magnetism http://link.aps.org/doi/10.1103/PhysRevB.80.193201 Author(s): Hye Jung Kim and Kyung Soo Yi<br/>We investigate temperature dependence of spin-resolved subband structure and spontaneous magnetization for different doping profiles of magnetic impurities in diluted (Ga,Mn)As quantum well structures. The self-consistent hole subband energies and wave functions are determined by solving combined Sc...<br/>[Phys. Rev. B 80, 193201] Published Mon Nov 02, 2009 Hye Jung Kim and Kyung Soo Yi 2009-11-02T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193201 Phys. Rev. B 80, 193201 text/html article Physical Review B 80 19 2009-11-02T00:00:00-05:00 193201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.144424 Author(s): Fenggong Wang, Zhiyong Pang, Liang Lin, Shaojie Fang, Ying Dai, and Shenghao Han<br/>The origin of magnetism in undoped MgO has been studied based on density functional theory. It is shown that Mg vacancies can induce local moments in MgO while O vacancies cannot irrespective of the concentration. The origin of the local magnetic moments comes from the partially occupied e_{g−} an...<br/>[Phys. Rev. B 80, 144424] Published Tue Oct 27, 2009 Fenggong Wang, Zhiyong Pang, Liang Lin, Shaojie Fang, Ying Dai, and Shenghao Han 2009-10-27T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.144424 Phys. Rev. B 80, 144424 text/html article Physical Review B 80 14 2009-10-27T00:00:00-04:00 144424 Magnetism Magnetism http://link.aps.org/doi/10.1103/PhysRevB.80.155203 Author(s): J. Zemen, J. Kučera, K. Olejník, and T. Jungwirth<br/>We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence-band holes and a spin representation for their kinetic-exchange interaction wit...<br/>[Phys. Rev. B 80, 155203] Published Tue Oct 27, 2009 J. Zemen, J. Kučera, K. Olejník, and T. Jungwirth 2009-10-27T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155203 Phys. Rev. B 80, 155203 text/html article Physical Review B 80 15 2009-10-27T00:00:00-04:00 155203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155202 Author(s): R. Escobedo, M. Carretero, L. L. Bonilla, and G. Platero<br/>Strongly nonlinear transport through dilute magnetic semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb, and exchange interaction. Nonlinear effects include the appearance of spin-polarized stationary states and self-sustained current oscillations as possible s...<br/>[Phys. Rev. B 80, 155202] Published Tue Oct 13, 2009 R. Escobedo, M. Carretero, L. L. Bonilla, and G. Platero 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155202 Phys. Rev. B 80, 155202 text/html article Physical Review B 80 15 2009-10-13T00:00:00-04:00 155202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161201 Author(s): Marko Turek, Jens Siewert, and Jaroslav Fabian<br/>Magneto-optical properties of the ferromagnetic semiconductor GaMnAs are studied in a material-specific multiband tight-binding approach. Two realistic models are compared: one has no impurity band while the other shows an impurity band for low Mn concentrations. The calculated magnetic circular dic...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161201] Published Tue Oct 13, 2009 Marko Turek, Jens Siewert, and Jaroslav Fabian 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161201 Phys. Rev. B 80, 161201 text/html article Physical Review B 80 16 2009-10-13T00:00:00-04:00 161201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161202 Author(s): C. Gourdon, V. Jeudy, A. Cēbers, A. Dourlat, Kh. Khazen, and A. Lemaître<br/>Magnetic field-driven domain-wall propagation in the flow regime is investigated in (Ga,Mn)As ferromagnetic semiconductor layers. Square-shape magnetic domains with an unexpected orientation of their edges, at π/8 with respect to the anisotropy axes, are found. This is shown to arise from the effec...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161202] Published Tue Oct 13, 2009 C. Gourdon, V. Jeudy, A. Cēbers, A. Dourlat, Kh. Khazen, and A. Lemaître 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161202 Phys. Rev. B 80, 161202 text/html article Physical Review B 80 16 2009-10-13T00:00:00-04:00 161202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155315 Author(s): Stephanie Jankowski, Swantje Horst, Alexej Chernikov, Sangam Chatterjee, and Wolfram Heimbrodt<br/>The complex interplay of energy transfer and tunneling processes in a series of asymmetric ZnSe/(Zn,Mn)Se double quantum-well (DQW) structures is investigated. Steady-state and time-resolved photoluminescence at low temperatures and external magnetic fields up to 7 T in this system show remarkable d...<br/>[Phys. Rev. B 80, 155315] Published Mon Oct 12, 2009 Stephanie Jankowski, Swantje Horst, Alexej Chernikov, Sangam Chatterjee, and Wolfram Heimbrodt 2009-10-12T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155315 Phys. Rev. B 80, 155315 text/html article Physical Review B 80 15 2009-10-12T00:00:00-04:00 155315 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.155313 Author(s): J.-P. Adam, S. Rohart, J. Ferré, A. Mougin, N. Vernier, L. Thevenard, A. Lemaître, G. Faini, and F. Glas<br/>An array of small independent and quasimonodisperse nanodots of the dilute magnetic semiconductor (Ga,Mn)As with out-of-plane easy axis has been patterned by electronic lithography and ion-beam etching from a strained epitaxial film. The thermal dependence (2<T<120 K) of the field-induced magnetic loops, coercivity, and anisotropy of the nanodots, have been measured by sensitive magneto-optical magnetometry. Below the superparamagnetic blocking temperature T_{B} , all results are consistent with a quasicoherent thermally activated and field-induced spin-rotation process. In spite of the nonconventional nature of the ferromagnetism mediated by holes and of the high dilution in manganese ions, T_{B} is well accounted for by the usual Néel-Brown model.<br/>[Phys. Rev. B 80, 155313] Published Fri Oct 09, 2009 J.-P. Adam, S. Rohart, J. Ferré, A. Mougin, N. Vernier, L. Thevenard, A. Lemaître, G. Faini, and F. Glas 2009-10-09T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155313 Phys. Rev. B 80, 155313 text/html article Physical Review B 80 15 2009-10-09T00:00:00-04:00 155313 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.134405 Author(s): Maxim Trushin, Karel Výborný, Peter Moraczewski, Alexey A. Kovalev, John Schliemann, and T. Jungwirth<br/>Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one realization of the AMR in which spin-orbit coupling enters via s...<br/>[Phys. Rev. B 80, 134405] Published Wed Oct 07, 2009 Maxim Trushin, Karel Výborný, Peter Moraczewski, Alexey A. Kovalev, John Schliemann, and T. Jungwirth 2009-10-07T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.134405 Phys. Rev. B 80, 134405 text/html article Physical Review B 80 13 2009-10-07T00:00:00-04:00 134405 Magnetism Magnetism http://link.aps.org/doi/10.1103/PhysRevB.80.165202 Author(s): Cătălin Paşcu Moca, Gergely Zaránd, and Mona Berciu<br/>We construct a semimicroscopic theory, to describe the optical conductivity of Ga_{1−x} Mn_{x} As in the dilute limit, x∼1% . We construct an effective Hamiltonian that captures inside-impurity-band optical transitions as well as transitions between the valence band and the impurity band. All pa...<br/>[Phys. Rev. B 80, 165202] Published Wed Oct 07, 2009 Cătălin Paşcu Moca, Gergely Zaránd, and Mona Berciu 2009-10-07T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165202 Phys. Rev. B 80, 165202 text/html article Physical Review B 80 16 2009-10-07T00:00:00-04:00 165202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.115335 Author(s): Nga T. T. Nguyen and F. M. Peeters<br/>Intraband cyclotron resonance (CR) transitions of a two-electron quantum dot containing a single magnetic ion is investigated for different Coulomb interaction strengths and different positions of the magnetic ion. In contrast to the usual parabolic quantum dots where CR is independent of the number...<br/>[Phys. Rev. B 80, 115335] Published Wed Sep 30, 2009 Nga T. T. Nguyen and F. M. Peeters 2009-09-30T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115335 Phys. Rev. B 80, 115335 text/html article Physical Review B 80 11 2009-09-30T00:00:00-04:00 115335 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.125330 Author(s): Markus Schlapps, Teresa Lermer, Stefan Geissler, Daniel Neumaier, Janusz Sadowski, Dieter Schuh, Werner Wegscheider, and Dieter Weiss<br/>We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature-dependent measurements down to the millikelvin range we compare the models ...<br/>[Phys. Rev. B 80, 125330] Published Fri Sep 25, 2009 Markus Schlapps, Teresa Lermer, Stefan Geissler, Daniel Neumaier, Janusz Sadowski, Dieter Schuh, Werner Wegscheider, and Dieter Weiss 2009-09-25T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125330 Phys. Rev. B 80, 125330 text/html article Physical Review B 80 12 2009-09-25T00:00:00-04:00 125330 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevLett.103.137201 Author(s): G. Acbas, M.-H. Kim, M. Cukr, V. Novák, M. A. Scarpulla, O. D. Dubon, T. Jungwirth, Jairo Sinova, and J. Cerne<br/>We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga_{1-x} Mn_{x} As near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous meas...<br/>[Phys. Rev. Lett. 103, 137201] Published Thu Sep 24, 2009 G. Acbas, M.-H. Kim, M. Cukr, V. Novák, M. A. Scarpulla, O. D. Dubon, T. Jungwirth, Jairo Sinova, and J. Cerne 2009-09-24T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevLett.103.137201 Phys. Rev. Lett. 103, 137201 text/html article Physical Review Letters 103 13 2009-09-24T00:00:00-04:00 137201 Condensed Matter: Electronic Properties, etc. Condensed Matter: Electronic Properties, etc. http://link.aps.org/doi/10.1103/PhysRevB.80.125122 Author(s): H. Iwasawa, S. Kaneyoshi, K. Kurahashi, T. Saitoh, I. Hase, T. Katsufuji, K. Shimada, H. Namatame, and M. Taniguchi<br/>We have investigated electron-doping effects on the electronic structure of Sr_{0.8−y} La_{0.2+y} Ti_{0.8} Cr_{0.2} O_{3} using high-resolution photoemission spectroscopy and first-principles band structure calculations. Photoemission results showed that the Cr 3d peak intensity is independent o...<br/>[Phys. Rev. B 80, 125122] Published Thu Sep 24, 2009 H. Iwasawa, S. Kaneyoshi, K. Kurahashi, T. Saitoh, I. Hase, T. Katsufuji, K. Shimada, H. Namatame, and M. Taniguchi 2009-09-24T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125122 Phys. Rev. B 80, 125122 text/html article Physical Review B 80 12 2009-09-24T00:00:00-04:00 125122 Electronic structure: wide-band, narrow-band, and strongly correlated systems Electronic structure: wide-band, narrow-band, and strongly correlated systems http://link.aps.org/doi/10.1103/PhysRevB.80.115212 Author(s): Run Long and Niall J. English<br/>Based on first-principles calculations, we have investigated the magnetic properties of the first-row element-doped ZnS semiconductors. Calculations reveal that Be, B, and C dopants can induce magnetism while N cannot lead to spin polarization in ZnS. A possible explanation has been rationalized fro...<br/>[Phys. Rev. B 80, 115212] Published Tue Sep 22, 2009 Run Long and Niall J. English 2009-09-22T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115212 Phys. Rev. B 80, 115212 text/html article Physical Review B 80 11 2009-09-22T00:00:00-04:00 115212 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.094409 Author(s): Shengqiang Zhou (周生强), K. Potzger, Qingyu Xu (徐庆宇), K. Kuepper, G. Talut, D. Markó, A. Mücklich, M. Helm, J. Fassbender, E. Arenholz, and H. Schmidt<br/>In this paper we show that spinel ferrite nanocrystals ( NiFe_{2} O_{4} , and CoFe_{2} O_{4} ) can be texturally embedded inside a ZnO matrix by ion implantation and postannealing. The two kinds of ferrites show different magnetic properties, e.g., coercivity and magnetization. Anomalous Hall effect...<br/>[Phys. Rev. B 80, 094409] Published Fri Sep 18, 2009 Shengqiang Zhou (周生强), K. Potzger, Qingyu Xu (徐庆宇), K. Kuepper, G. Talut, D. Markó, A. Mücklich, M. Helm, J. Fassbender, E. Arenholz, and H. Schmidt 2009-09-18T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.094409 Phys. Rev. B 80, 094409 text/html article Physical Review B 80 9 2009-09-18T00:00:00-04:00 094409 Magnetism Magnetism http://link.aps.org/doi/10.1103/PhysRevB.80.125204 Author(s): M. Glunk, J. Daeubler, W. Schoch, R. Sauer, and W. Limmer<br/>We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σ_{xx} ranging from the low-conductivity to the high-conductivity regime. The anomalous Hall conductivity σ_{xy}^{(AH)} is extracted from the measured longitudinal and Ha...<br/>[Phys. Rev. B 80, 125204] Published Thu Sep 17, 2009 M. Glunk, J. Daeubler, W. Schoch, R. Sauer, and W. Limmer 2009-09-17T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125204 Phys. Rev. B 80, 125204 text/html article Physical Review B 80 12 2009-09-17T00:00:00-04:00 125204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.115414 Author(s): R. Robles and S. N. Khanna<br/>First principles electronic structure calculations on a free CrSi_{12} cluster, a (CrSi_{12} )_{2} dimer, and CrSi_{12} clusters supported on Si(111) surfaces have been carried out within a gradient corrected density functional formalism using a supercell approach. The ground state of CrSi_{12} is a...<br/>[Phys. Rev. B 80, 115414] Published Tue Sep 15, 2009 R. Robles and S. N. Khanna 2009-09-15T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115414 Phys. Rev. B 80, 115414 text/html article Physical Review B 80 11 2009-09-15T00:00:00-04:00 115414 Surface physics, nanoscale physics, low-dimensional systems Surface physics, nanoscale physics, low-dimensional systems http://link.aps.org/doi/10.1103/PhysRevB.80.125313 Author(s): K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura<br/>We report the origin of the positive magnetoresistance (MR) occurring in the ZnO conduction layer underneath of the Zn_{0.88} Mn_{0.12} O magnetic barrier layer. First, n -type Zn_{0.88} Mn_{0.12} O/ZnO modulation-doped heterostructures were fabricated on ZnO (0001 [over ¯] ) single-crystal substra...<br/>[Phys. Rev. B 80, 125313] Published Tue Sep 15, 2009 K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura 2009-09-15T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125313 Phys. Rev. B 80, 125313 text/html article Physical Review B 80 12 2009-09-15T00:00:00-04:00 125313 Semiconductors II: surfaces, interfaces, microstructures, and related topics Semiconductors II: surfaces, interfaces, microstructures, and related topics http://link.aps.org/doi/10.1103/PhysRevB.80.104412 Author(s): R. Leitsmann, C. Panse, F. Küwen, and F. Bechstedt<br/>We investigate the influence of transition-metal doping on silicon nanocrystals by means of first-principles calculations within a supercell approach. We focus on the energetic stability of different doping sites and on electronic and magnetic properties of the most stable configurations. Remarkable...<br/>[Phys. Rev. B 80, 104412] Published Fri Sep 11, 2009 R. Leitsmann, C. Panse, F. Küwen, and F. Bechstedt 2009-09-11T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.104412 Phys. Rev. B 80, 104412 text/html article Physical Review B 80 10 2009-09-11T00:00:00-04:00 104412 Magnetism Magnetism http://link.aps.org/doi/10.1103/PhysRevB.80.115203 Author(s): A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza<br/>Motivated by recent developments in spintronics, we propose an explanation of the single-ion anisotropy of Mn-doped diluted magnetic semiconductors using as an example high-quality ZnO:Mn thin films for which X -band electron-paramagnetic-resonance studies were performed. We derive an analytic formu...<br/>[Phys. Rev. B 80, 115203] Published Thu Sep 10, 2009 A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza 2009-09-10T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115203 Phys. Rev. B 80, 115203 text/html article Physical Review B 80 11 2009-09-10T00:00:00-04:00 115203 Semiconductors I: bulk Semiconductors I: bulk