http://prb.aps.org/ Recently published articles in Phys. Rev. B in the Table of Content section "Semiconductors I: bulk" en-us Copyright (c) 2009 The American Physical Society 2009-11-05T23:45:08-05:00 assocpub@aps.org rss@aps.org hourly 4 2009-11-05T23:45:08-05:00 rss@aps.org http://link.aps.org/doi/10.1103/PhysRevB.80.193201 Author(s): Hye Jung Kim and Kyung Soo Yi<br/>We investigate temperature dependence of spin-resolved subband structure and spontaneous magnetization for different doping profiles of magnetic impurities in diluted (Ga,Mn)As quantum well structures. The self-consistent hole subband energies and wave functions are determined by solving combined Sc...<br/>[Phys. Rev. B 80, 193201] Published Mon Nov 02, 2009 Hye Jung Kim and Kyung Soo Yi 2009-11-02T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193201 Phys. Rev. B 80, 193201 text/html article Physical Review B 80 19 2009-11-02T00:00:00-05:00 193201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161207 Author(s): Daniele Fausti, Oleg V. Misochko, and Paul H. M. van Loosdrecht<br/>Picosecond Raman scattering is used to study the photoinduced ultrafast dynamics in Peierls distorted antimony. We find evidence for an ultrafast nonthermal reversible structural phase transition. Most surprisingly, we find evidence that this transition evolves toward a lower symmetry in contrast to...<br/><img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/><br/> <img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161207] Published Fri Oct 30, 2009 Daniele Fausti, Oleg V. Misochko, and Paul H. M. van Loosdrecht 2009-10-30T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161207 Phys. Rev. B 80, 161207 text/html article Physical Review B 80 16 2009-10-30T00:00:00-04:00 161207 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165207 Author(s): V. Consonni, G. Feuillet, J. P. Barnes, and F. Donatini<br/>The annealing of chlorine-doped polycrystalline CdTe films leads to the occurrence of an abnormal grain structure with the formation of both primary and secondary grains, the latter being larger and growing at the expense of the former. The spatial distribution of dopants and defects has been invest...<br/>[Phys. Rev. B 80, 165207] Published Thu Oct 29, 2009 V. Consonni, G. Feuillet, J. P. Barnes, and F. Donatini 2009-10-29T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165207 Phys. Rev. B 80, 165207 text/html article Physical Review B 80 16 2009-10-29T00:00:00-04:00 165207 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161206 Author(s): M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstrøm, and P. A. Crowell<br/>Measurements and modeling of electron-spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with n-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolariz...<br/><img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/><br/> <img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161206] Published Wed Oct 28, 2009 M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstrøm, and P. A. Crowell 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161206 Phys. Rev. B 80, 161206 text/html article Physical Review B 80 16 2009-10-28T00:00:00-04:00 161206 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155205 Author(s): J. L. Cabellos, Bernardo S. Mendoza, M. A. Escobar, F. Nastos, and J. E. Sipe<br/>Calculations of the second-harmonic susceptibility tensor χ^{abc} (−2ω;ω,ω) are presented for bulk semiconductors within both the v⋅A and the r⋅E gauges. The description of the semiconductor states incorporates the “scissors” Hamiltonian commonly used to obtain the correct band gap. Th...<br/>[Phys. Rev. B 80, 155205] Published Wed Oct 28, 2009 J. L. Cabellos, Bernardo S. Mendoza, M. A. Escobar, F. Nastos, and J. E. Sipe 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155205 Phys. Rev. B 80, 155205 text/html article Physical Review B 80 15 2009-10-28T00:00:00-04:00 155205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.153203 Author(s): B. Song, J. C. Han, J. K. Jian, H. Li, Y. C. Wang, H. Q. Bao, W. Y. Wang, H. B. Zuo, X. H. Zhang, S. H. Meng, and X. L. Chen<br/>We report the synthesis and magnetic properties characterizations of defective BN obtained from a modified solid-state reaction. X-ray diffraction analysis indicated the presence of two crystalline phases of BN in products. No magnetic impurities, such as Fe, Co, Mn, and Ni were detected by chemical...<br/>[Phys. Rev. B 80, 153203] Published Wed Oct 28, 2009 B. Song, J. C. Han, J. K. Jian, H. Li, Y. C. Wang, H. Q. Bao, W. Y. Wang, H. B. Zuo, X. H. Zhang, S. H. Meng, and X. L. Chen 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.153203 Phys. Rev. B 80, 153203 text/html article Physical Review B 80 15 2009-10-28T00:00:00-04:00 153203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.153202 Author(s): N. T. Son, C. G. Hemmingsson, T. Paskova, K. R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, B. Monemar, and E. Janzén<br/>Cation vacancies like V_{Ga} , V_{Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magn...<br/>[Phys. Rev. B 80, 153202] Published Wed Oct 28, 2009 N. T. Son, C. G. Hemmingsson, T. Paskova, K. R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, B. Monemar, and E. Janzén 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.153202 Phys. Rev. B 80, 153202 text/html article Physical Review B 80 15 2009-10-28T00:00:00-04:00 153202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155204 Author(s): Ramon Cuscó, Jordi Ibáñez, Esther Alarcón-Lladó, Luis Artús, Tomohiro Yamaguchi, and Yasushi Nanishi<br/>The effect of photoexcited electron-hole pairs on the LO-phonon-plasmon coupled modes has been observed in InN layers by means of micro-Raman experiments performed at different excitation laser powers. The L^{−} Raman peak displays an upward shift of about 10 cm^{−1} over the range of increasi...<br/>[Phys. Rev. B 80, 155204] Published Tue Oct 27, 2009 Ramon Cuscó, Jordi Ibáñez, Esther Alarcón-Lladó, Luis Artús, Tomohiro Yamaguchi, and Yasushi Nanishi 2009-10-27T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155204 Phys. Rev. B 80, 155204 text/html article Physical Review B 80 15 2009-10-27T00:00:00-04:00 155204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155203 Author(s): J. Zemen, J. Kučera, K. Olejník, and T. Jungwirth<br/>We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence-band holes and a spin representation for their kinetic-exchange interaction wit...<br/>[Phys. Rev. B 80, 155203] Published Tue Oct 27, 2009 J. Zemen, J. Kučera, K. Olejník, and T. Jungwirth 2009-10-27T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155203 Phys. Rev. B 80, 155203 text/html article Physical Review B 80 15 2009-10-27T00:00:00-04:00 155203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161205 Author(s): E. Engel<br/>The role of the core-valence interaction in electronic structure calculations with the exact exchange of density-functional theory is investigated by comparison of pseudopotential with all-electron results for diamond and lithium. The same full-potential framework is applied in the case of both appr...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161205] Published Fri Oct 23, 2009 E. Engel 2009-10-23T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161205 Phys. Rev. B 80, 161205 text/html article Physical Review B 80 16 2009-10-23T00:00:00-04:00 161205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161204 Author(s): Adi Makmal, Rickard Armiento, Eberhard Engel, Leeor Kronik, and Stephan Kümmel<br/>We present exact-exchange calculations of the Kohn-Sham gap, as well as the fundamental gap resulting from it, using highly accurate grid-based all-electron and pseudopotential approaches for prototypical diatomic molecules. Results obtained with pseudopotentials that have been constructed in a mann...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161204] Published Fri Oct 23, 2009 Adi Makmal, Rickard Armiento, Eberhard Engel, Leeor Kronik, and Stephan Kümmel 2009-10-23T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161204 Phys. Rev. B 80, 161204 text/html article Physical Review B 80 16 2009-10-23T00:00:00-04:00 161204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161203 Author(s): J. Gabelli and B. Reulet<br/>We report the measurement of higher order cumulants of the current fluctuations in an avalanche diode with a stationary dc current. Such a system is archetypal of devices in which transport is governed by a collective mechanism, in this case charge multiplication by avalanche. We have measured the f...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161203] Published Wed Oct 21, 2009 J. Gabelli and B. Reulet 2009-10-21T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161203 Phys. Rev. B 80, 161203 text/html article Physical Review B 80 16 2009-10-21T00:00:00-04:00 161203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165206 Author(s): J. Tate, H. L. Ju, J. C. Moon, A. Zakutayev, A. P. Richard, J. Russell, and D. H. McIntyre<br/>We report measurements of the structural, optical, transport, and magnetic properties of single crystals of the anisotropic p -type transparent semiconductor CuAlO_{2} . The indirect and direct band gaps are 2.97 and 3.47 eV, respectively. Temperature-dependent Hall measurements yield a positive Hal...<br/>[Phys. Rev. B 80, 165206] Published Fri Oct 16, 2009 J. Tate, H. L. Ju, J. C. Moon, A. Zakutayev, A. P. Richard, J. Russell, and D. H. McIntyre 2009-10-16T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165206 Phys. Rev. B 80, 165206 text/html article Physical Review B 80 16 2009-10-16T00:00:00-04:00 165206 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161202 Author(s): C. Gourdon, V. Jeudy, A. Cēbers, A. Dourlat, Kh. Khazen, and A. Lemaître<br/>Magnetic field-driven domain-wall propagation in the flow regime is investigated in (Ga,Mn)As ferromagnetic semiconductor layers. Square-shape magnetic domains with an unexpected orientation of their edges, at π/8 with respect to the anisotropy axes, are found. This is shown to arise from the effec...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161202] Published Tue Oct 13, 2009 C. Gourdon, V. Jeudy, A. Cēbers, A. Dourlat, Kh. Khazen, and A. Lemaître 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161202 Phys. Rev. B 80, 161202 text/html article Physical Review B 80 16 2009-10-13T00:00:00-04:00 161202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161201 Author(s): Marko Turek, Jens Siewert, and Jaroslav Fabian<br/>Magneto-optical properties of the ferromagnetic semiconductor GaMnAs are studied in a material-specific multiband tight-binding approach. Two realistic models are compared: one has no impurity band while the other shows an impurity band for low Mn concentrations. The calculated magnetic circular dic...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161201] Published Tue Oct 13, 2009 Marko Turek, Jens Siewert, and Jaroslav Fabian 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161201 Phys. Rev. B 80, 161201 text/html article Physical Review B 80 16 2009-10-13T00:00:00-04:00 161201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155202 Author(s): R. Escobedo, M. Carretero, L. L. Bonilla, and G. Platero<br/>Strongly nonlinear transport through dilute magnetic semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb, and exchange interaction. Nonlinear effects include the appearance of spin-polarized stationary states and self-sustained current oscillations as possible s...<br/>[Phys. Rev. B 80, 155202] Published Tue Oct 13, 2009 R. Escobedo, M. Carretero, L. L. Bonilla, and G. Platero 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155202 Phys. Rev. B 80, 155202 text/html article Physical Review B 80 15 2009-10-13T00:00:00-04:00 155202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.153201 Author(s): Yanqin Gai, Jingbo Li, Shu-Shen Li, Jian-Bai Xia, Yanfa Yan, and Su-Huai Wei<br/>The intrinsic large electronegativity of O 2p character of the valence-band maximum (VBM) of ZnO renders it extremely difficult to be doped p type. We show from density functional calculation that such VBM characteristic can be altered by compensated donor-acceptor pairs, thus improve the p -type ...<br/>[Phys. Rev. B 80, 153201] Published Tue Oct 13, 2009 Yanqin Gai, Jingbo Li, Shu-Shen Li, Jian-Bai Xia, Yanfa Yan, and Su-Huai Wei 2009-10-13T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.153201 Phys. Rev. B 80, 153201 text/html article Physical Review B 80 15 2009-10-13T00:00:00-04:00 153201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165205 Author(s): Vl. Kolkovsky, V. Kolkovsky, K. Bonde Nielsen, L. Dobaczewski, G. Karczewski, and A. Nylandsted Larsen<br/>The first results demonstrating the existence of a donor level of interstitial hydrogen in CdTe are presented. From the Arrhenius analysis, this donor level is characterized by an activation energy for electron emission E_{C} −E_{t} =0.06 eV and a pre-exponential factor equal to 2×10^{5}  s^{...<br/>[Phys. Rev. B 80, 165205] Published Mon Oct 12, 2009 Vl. Kolkovsky, V. Kolkovsky, K. Bonde Nielsen, L. Dobaczewski, G. Karczewski, and A. Nylandsted Larsen 2009-10-12T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165205 Phys. Rev. B 80, 165205 text/html article Physical Review B 80 16 2009-10-12T00:00:00-04:00 165205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165204 Author(s): Karel Výborný, Jan Kučera, Jairo Sinova, A. W. Rushforth, B. L. Gallagher, and T. Jungwirth<br/>Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the an...<br/>[Phys. Rev. B 80, 165204] Published Fri Oct 09, 2009 Karel Výborný, Jan Kučera, Jairo Sinova, A. W. Rushforth, B. L. Gallagher, and T. Jungwirth 2009-10-09T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165204 Phys. Rev. B 80, 165204 text/html article Physical Review B 80 16 2009-10-09T00:00:00-04:00 165204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165203 Author(s): Bo Qiu and Xiulin Ruan<br/>Two-body interatomic potentials in the Morse potential form have been developed for bismuth telluride, and the potentials are used in molecular dynamics simulations to predict the thermal conductivity. The density-functional theory with local-density approximations is first used to calculate the tot...<br/>[Phys. Rev. B 80, 165203] Published Thu Oct 08, 2009 Bo Qiu and Xiulin Ruan 2009-10-08T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165203 Phys. Rev. B 80, 165203 text/html article Physical Review B 80 16 2009-10-08T00:00:00-04:00 165203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165202 Author(s): Cătălin Paşcu Moca, Gergely Zaránd, and Mona Berciu<br/>We construct a semimicroscopic theory, to describe the optical conductivity of Ga_{1−x} Mn_{x} As in the dilute limit, x∼1% . We construct an effective Hamiltonian that captures inside-impurity-band optical transitions as well as transitions between the valence band and the impurity band. All pa...<br/>[Phys. Rev. B 80, 165202] Published Wed Oct 07, 2009 Cătălin Paşcu Moca, Gergely Zaránd, and Mona Berciu 2009-10-07T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165202 Phys. Rev. B 80, 165202 text/html article Physical Review B 80 16 2009-10-07T00:00:00-04:00 165202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165201 Author(s): J. A. Chan and Alex Zunger<br/>The formation enthalpies of isovalent, isostructural rocksalt alloys, (A,B) , where X=O such as (Ca,Mg)O, are typically unfavorable (positive) for both ordered and random phases. Simple replacement of the single-atom anion, X , by a larger anionic group, such as CO_{3} or SO_{4} , is able to induce ...<br/>[Phys. Rev. B 80, 165201] Published Tue Oct 06, 2009 J. A. Chan and Alex Zunger 2009-10-06T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165201 Phys. Rev. B 80, 165201 text/html article Physical Review B 80 16 2009-10-06T00:00:00-04:00 165201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155201 Author(s): D. Semkat, F. Richter, D. Kremp, G. Manzke, W.-D. Kraeft, and K. Henneberger<br/>The ionization equilibrium of an electron-hole plasma in a highly excited semiconductor is investigated. Special attention is directed to the influence of many-particle effects such as screening and lowering of the ionization energy causing, in particular, the Mott effect (density ionization). This ...<br/>[Phys. Rev. B 80, 155201] Published Fri Oct 02, 2009 D. Semkat, F. Richter, D. Kremp, G. Manzke, W.-D. Kraeft, and K. Henneberger 2009-10-02T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155201 Phys. Rev. B 80, 155201 text/html article Physical Review B 80 15 2009-10-02T00:00:00-04:00 155201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.125211 Author(s): M. Herrera, Q. M. Ramasse, D. G. Morgan, D. Gonzalez, J. Pizarro, A. Yáñez, P. Galindo, R. Garcia, M.-H. Du, S. B. Zhang, M. Hopkinson, and N. D. Browning<br/>While high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) has been successfully used for the analysis of heavy atoms in a lighter matrix, the detection of light atoms in a heavy matrix remains challenging. In this paper, we show that the combination of first-principl...<br/>[Phys. Rev. B 80, 125211] Published Wed Sep 30, 2009 M. Herrera, Q. M. Ramasse, D. G. Morgan, D. Gonzalez, J. Pizarro, A. Yáñez, P. Galindo, R. Garcia, M.-H. Du, S. B. Zhang, M. Hopkinson, and N. D. Browning 2009-09-30T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125211 Phys. Rev. B 80, 125211 text/html article Physical Review B 80 12 2009-09-30T00:00:00-04:00 125211 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.115217 Author(s): Mao-Hua Du and S. B. Zhang<br/>Hybrid density functional calculations are performed to study the electronic and optical properties of substitutional Li and Na in ZnO. Our calculations correctly show hole localizations at neutral Li_{Zn}^{0} and Na_{Zn}^{0} , which lead to the formation of small polarons as observed experimentally...<br/>[Phys. Rev. B 80, 115217] Published Wed Sep 30, 2009 Mao-Hua Du and S. B. Zhang 2009-09-30T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115217 Phys. Rev. B 80, 115217 text/html article Physical Review B 80 11 2009-09-30T00:00:00-04:00 115217 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.125210 Author(s): P. W. Hillyard, S. V. N. T. Kuchibhatla, T. E. Glover, M. P. Hertlein, N. Huse, P. Nachimuthu, L. V. Saraf, S. Thevuthasan, and K. J. Gaffney<br/>We have used time-resolved soft x-ray spectroscopy to investigate the electronic structure of optically excited cuprous oxide at the O K edge and the Cu L_{3} edge. The 400 nm optical excitation shifts the Cu and O absorptions to lower energy, but does not change the integrated x-ray absorption ...<br/>[Phys. Rev. B 80, 125210] Published Tue Sep 29, 2009 P. W. Hillyard, S. V. N. T. Kuchibhatla, T. E. Glover, M. P. Hertlein, N. Huse, P. Nachimuthu, L. V. Saraf, S. Thevuthasan, and K. J. Gaffney 2009-09-29T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125210 Phys. Rev. B 80, 125210 text/html article Physical Review B 80 12 2009-09-29T00:00:00-04:00 125210 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.115216 Author(s): Qin Liu and Tianxing Ma<br/>Following the recent theoretical proposal and experiment on quantum spin Hall effect in HgTe/CdTe quantum wells, we consider a single magnetic impurity localized in the bulk of the system, which we treat as a classical spin. It is shown that there are always localized excited states in the bulk ener...<br/>[Phys. Rev. B 80, 115216] Published Tue Sep 29, 2009 Qin Liu and Tianxing Ma 2009-09-29T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115216 Phys. Rev. B 80, 115216 text/html article Physical Review B 80 11 2009-09-29T00:00:00-04:00 115216 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.113202 Author(s): Gordon Davies, K. K. Kohli, P. Clauws, and N. Q. Vinh<br/>The ν_{3} (862.5 cm^{−1} ) vibration of oxygen in crystalline germanium is shown to decay into one ν_{1} local mode of the oxygen center plus two lattice modes. This description predicts increases in the linewidths in ^{16} O -doped germanium, and decreases in the linewidths in ^{18} O -doped ...<br/>[Phys. Rev. B 80, 113202] Published Tue Sep 29, 2009 Gordon Davies, K. K. Kohli, P. Clauws, and N. Q. Vinh 2009-09-29T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.113202 Phys. Rev. B 80, 113202 text/html article Physical Review B 80 11 2009-09-29T00:00:00-04:00 113202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.115215 Author(s): J. Rosen and O. Warschkow<br/>Using empirical atomistic simulations and density functional theory (DFT), we examine the atomic and electronic structure of pure- and tin-doped indium oxide in various degrees of amorphisation. Atomic structures ranging from maximally amorphous (within fixed periodic boundary conditions) to fully c...<br/>[Phys. Rev. B 80, 115215] Published Mon Sep 28, 2009 J. Rosen and O. Warschkow 2009-09-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.115215 Phys. Rev. B 80, 115215 text/html article Physical Review B 80 11 2009-09-28T00:00:00-04:00 115215 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.125209 Author(s): Vijay R. D’Costa, John Tolle, Junqi Xie, John Kouvetakis, and José Menéndez<br/>The dielectric function of heavily doped p -type Ge_{0.98} Sn_{0.02} alloys was determined using infrared spectroscopic ellipsometry. The free holes contribute a Drude-like term to the dielectric response, from which the resistivity and carrier relaxation time can be determined. The transport parame...<br/>[Phys. Rev. B 80, 125209] Published Fri Sep 25, 2009 Vijay R. D’Costa, John Tolle, Junqi Xie, John Kouvetakis, and José Menéndez 2009-09-25T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.125209 Phys. Rev. B 80, 125209 text/html article Physical Review B 80 12 2009-09-25T00:00:00-04:00 125209 Semiconductors I: bulk Semiconductors I: bulk