http://prb.aps.org/ Recently published articles in Phys. Rev. B in the Table of Content section "Semiconductors I: bulk" en-us Copyright (c) 2009 The American Physical Society 2009-11-22T06:15:38-05:00 assocpub@aps.org rss@aps.org hourly 4 2009-11-22T06:15:38-05:00 rss@aps.org http://link.aps.org/doi/10.1103/PhysRevB.80.205205 Author(s): C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W. G. Schmidt, M. Stutzmann, and M. S. Brandt<br/>The effects of hydrogenation on Mn-doped GaN are studied with electron-paramagnetic resonance (EPR), local vibrational mode (LVM) spectroscopy, and density-functional theory (DFT) calculations. With EPR, we find two distinct Mn complexes which, in particular, differ in the size and orientation of th...<br/>[Phys. Rev. B 80, 205205] Published Fri Nov 20, 2009 C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W. G. Schmidt, M. Stutzmann, and M. S. Brandt 2009-11-20T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205205 Phys. Rev. B 80, 205205 text/html article Physical Review B 80 20 2009-11-20T00:00:00-05:00 205205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.205204 Author(s): N. Jedrecy, H. J. von Bardeleben, and D. Demaille<br/>In order to provide insight into the magnetic properties of semiconductors with ferromagnetic inclusions, we present a thorough quantitative analysis of (Zn,Co)O films with high Co concentration, which give rise to high saturation magnetization values (∼110 kA m^{−1} ) at room temperature. F...<br/>[Phys. Rev. B 80, 205204] Published Thu Nov 19, 2009 N. Jedrecy, H. J. von Bardeleben, and D. Demaille 2009-11-19T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205204 Phys. Rev. B 80, 205204 text/html article Physical Review B 80 20 2009-11-19T00:00:00-05:00 205204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195209 Author(s): Stavros Athanasopoulos, Evguenia V. Emelianova, Alison B. Walker, and David Beljonne<br/>We implement a simple, continuous, analytical model for exciton hopping in an energetically disordered molecular landscape. The model is parameterized against atomistic and lattice Monte Carlo simulations based on quantum-chemical calculations. It captures the essential physics of exciton diffusion ...<br/>[Phys. Rev. B 80, 195209] Published Thu Nov 19, 2009 Stavros Athanasopoulos, Evguenia V. Emelianova, Alison B. Walker, and David Beljonne 2009-11-19T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195209 Phys. Rev. B 80, 195209 text/html article Physical Review B 80 19 2009-11-19T00:00:00-05:00 195209 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193205 Author(s): P. M. Shmakov, A. P. Dmitriev, and V. Yu. Kachorovskii<br/>We study electron-spin dynamics in diluted magnetic quantum wells. The electrons are coupled by exchange interaction with randomly distributed magnetic ions polarized by magnetic field B . This coupling leads to both spin relaxation and spin decoherence. We demonstrate that even very small spatial f...<br/>[Phys. Rev. B 80, 193205] Published Thu Nov 19, 2009 P. M. Shmakov, A. P. Dmitriev, and V. Yu. Kachorovskii 2009-11-19T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193205 Phys. Rev. B 80, 193205 text/html article Physical Review B 80 19 2009-11-19T00:00:00-05:00 193205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.205203 Author(s): Markus R. Wagner, Jan-Hindrik Schulze, Ronny Kirste, Munise Cobet, Axel Hoffmann, Christian Rauch, Anna V. Rodina, Bruno K. Meyer, Uwe Röder, and Klaus Thonke<br/>The symmetry ordering of the valence bands in ZnO is derived from high-resolution magneto-optical measurements of bound excitons. We report on the experimental observation of a hole state related fine splitting for bound excitons in the Voigt configuration. This splitting is related to a nonzero Lan...<br/><img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/><br/> [Phys. Rev. B 80, 205203] Published Wed Nov 18, 2009 Markus R. Wagner, Jan-Hindrik Schulze, Ronny Kirste, Munise Cobet, Axel Hoffmann, Christian Rauch, Anna V. Rodina, Bruno K. Meyer, Uwe Röder, and Klaus Thonke 2009-11-18T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205203 Phys. Rev. B 80, 205203 text/html article Physical Review B 80 20 2009-11-18T00:00:00-05:00 205203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195208 Author(s): A. Bedoya-Pinto, J. Malindretos, M. Roever, D. D. Mai, and A. Rizzi<br/>Electrical-transport properties of ferromagnetic GaGdN layers grown by molecular-beam epitaxy on highly resistive 6H-SiC(0001) substrates have been investigated. It is found that doping with low concentrations of Gd increases the resistivity by several orders of magnitude as compared to unintentiona...<br/>[Phys. Rev. B 80, 195208] Published Tue Nov 17, 2009 A. Bedoya-Pinto, J. Malindretos, M. Roever, D. D. Mai, and A. Rizzi 2009-11-17T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195208 Phys. Rev. B 80, 195208 text/html article Physical Review B 80 19 2009-11-17T00:00:00-05:00 195208 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195207 Author(s): K. Keunen and A. Stesmans<br/>An electron spin resonance (ESR) study has been carried out in the range 4.2–120 K on the trigonal Si-B4 center in annealed (200–350 °C) neutron-irradiated p -type Si. Detailed observations reveal a rich ^{29} Si hyperfine (hf) structure, indicating interaction of the unpaired electron with u...<br/>[Phys. Rev. B 80, 195207] Published Tue Nov 17, 2009 K. Keunen and A. Stesmans 2009-11-17T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195207 Phys. Rev. B 80, 195207 text/html article Physical Review B 80 19 2009-11-17T00:00:00-05:00 195207 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193204 Author(s): J.-P. Adam, N. Vernier, J. Ferré, A. Thiaville, V. Jeudy, A. Lemaître, L. Thevenard, and G. Faini<br/>Current-induced magnetic domain wall motion has been investigated in microtracks made from a ferromagnetic semiconductor (Ga,Mn)As thin film with perpendicular anisotropy. In order to reveal the nature of this motion, small fields were additionally applied. The results demonstrate that, when driven ...<br/>[Phys. Rev. B 80, 193204] Published Tue Nov 17, 2009 J.-P. Adam, N. Vernier, J. Ferré, A. Thiaville, V. Jeudy, A. Lemaître, L. Thevenard, and G. Faini 2009-11-17T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193204 Phys. Rev. B 80, 193204 text/html article Physical Review B 80 19 2009-11-17T00:00:00-05:00 193204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195206 Author(s): R. Trotta, D. Giubertoni, A. Polimeni, M. Bersani, M. Capizzi, F. Martelli, S. Rubini, G. Bisognin, and M. Berti<br/>Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. In this work, we investigate how the formation and dissociation of such complexes rule the diffusi...<br/>[Phys. Rev. B 80, 195206] Published Mon Nov 16, 2009 R. Trotta, D. Giubertoni, A. Polimeni, M. Bersani, M. Capizzi, F. Martelli, S. Rubini, G. Bisognin, and M. Berti 2009-11-16T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195206 Phys. Rev. B 80, 195206 text/html article Physical Review B 80 19 2009-11-16T00:00:00-05:00 195206 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195205 Author(s): A. Carvalho, A. Alkauskas, Alfredo Pasquarello, A. K. Tagantsev, and N. Setter<br/>The properties of interstitial and substitutional Li in wurtzite ZnO are modeled using hybrid density functional calculations. We investigate the impact of the band-gap error on the formation energies of the two defects and their dependence on the Fermi level. It is found that within a local-density...<br/>[Phys. Rev. B 80, 195205] Published Thu Nov 12, 2009 A. Carvalho, A. Alkauskas, Alfredo Pasquarello, A. K. Tagantsev, and N. Setter 2009-11-12T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195205 Phys. Rev. B 80, 195205 text/html article Physical Review B 80 19 2009-11-12T00:00:00-05:00 195205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195204 Author(s): M. Cardona, R. K. Kremer, R. Lauck, G. Siegle, A. Muñoz, and A. H. Romero<br/>We report ab initio calculations of the electronic band structure and the phonon dispersion relations of the zincblende-type mercury chalcogenides ( β-HgS , HgSe, and HgTe). The latter have been used to evaluate the temperature dependence of the specific heat, which has been compared with experimen...<br/>[Phys. Rev. B 80, 195204] Published Wed Nov 11, 2009 M. Cardona, R. K. Kremer, R. Lauck, G. Siegle, A. Muñoz, and A. H. Romero 2009-11-11T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195204 Phys. Rev. B 80, 195204 text/html article Physical Review B 80 19 2009-11-11T00:00:00-05:00 195204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195203 Author(s): A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager, III, and E. E. Haller<br/>While the first comparison of shallow bound exciton photoluminescence between natural Si and highly enriched ^{28} Si dramatically demonstrated the importance of inhomogeneous isotope broadening, the transitions in ^{28} Si were in fact too narrow to be resolved with the then available instrumental ...<br/>[Phys. Rev. B 80, 195203] Published Wed Nov 11, 2009 A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager, III, and E. E. Haller 2009-11-11T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195203 Phys. Rev. B 80, 195203 text/html article Physical Review B 80 19 2009-11-11T00:00:00-05:00 195203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195202 Author(s): Yoichi Yamada, Takuya Saito, Nobuo Kato, Eiji Kobayashi, Tsunemasa Taguchi, Hiromitsu Kudo, and Hiroaki Okagawa<br/>The characteristics of band-edge photoluminescence (PL) from Ga-rich In_{x} Ga_{1−x} N ternary-alloy epitaxial layers with indium compositions of x=0.02 , 0.03, 0.05, 0.06, and 0.09 have been comprehensively studied by means of scanning near-field optical microscopy (SNOM) in addition to conventio...<br/>[Phys. Rev. B 80, 195202] Published Tue Nov 10, 2009 Yoichi Yamada, Takuya Saito, Nobuo Kato, Eiji Kobayashi, Tsunemasa Taguchi, Hiromitsu Kudo, and Hiroaki Okagawa 2009-11-10T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195202 Phys. Rev. B 80, 195202 text/html article Physical Review B 80 19 2009-11-10T00:00:00-05:00 195202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193203 Author(s): Horng-Chang Liu, Chia-He Hsu, Wu-Ching Chou, Wei-Kuo Chen, and Wen-Hao Chang<br/>Recombination dynamics in degenerate InN were investigated by means of time-resolved excitation-correlation spectroscopy. The photoluminescence decay times are determined beyond the spectral response and temporal resolution limits of conventional photon-counting detectors. Spectral and temperature d...<br/>[Phys. Rev. B 80, 193203] Published Tue Nov 10, 2009 Horng-Chang Liu, Chia-He Hsu, Wu-Ching Chou, Wei-Kuo Chen, and Wen-Hao Chang 2009-11-10T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193203 Phys. Rev. B 80, 193203 text/html article Physical Review B 80 19 2009-11-10T00:00:00-05:00 193203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193202 Author(s): Sukit Limpijumnong, Pakpoom Reunchan, Anderson Janotti, and Chris G. Van de Walle<br/>First-principles density-functional theory is employed to investigate the role of hydrogen impurities in In_{2} O_{3} . We find that both interstitial hydrogen (H_{i} ) and substitutional hydrogen (H_{O} ) act as shallow donors. Our results support recent experiments by Koida [Jpn. J. Appl. Phys. 46...<br/>[Phys. Rev. B 80, 193202] Published Mon Nov 09, 2009 Sukit Limpijumnong, Pakpoom Reunchan, Anderson Janotti, and Chris G. Van de Walle 2009-11-09T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193202 Phys. Rev. B 80, 193202 text/html article Physical Review B 80 19 2009-11-09T00:00:00-05:00 193202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.205202 Author(s): F. V. Kyrychenko and C. A. Ullrich<br/>The static conductivity of the diluted magnetic semiconductor Ga_{1−x} Mn_{x} As is calculated using an equation of motion approach for the current response combined with time-dependent density-functional theory to account for Hartree and exchange interactions within the hole gas. We find that the...<br/>[Phys. Rev. B 80, 205202] Published Fri Nov 06, 2009 F. V. Kyrychenko and C. A. Ullrich 2009-11-06T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205202 Phys. Rev. B 80, 205202 text/html article Physical Review B 80 20 2009-11-06T00:00:00-05:00 205202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.205201 Author(s): Hideo Kishida, Hisashi Takamatsu, Ken Fujinuma, and Hiroshi Okamoto<br/>Ferroelectricity in an organic charge-transfer compound, tetrathiafulvalene- p -chloranil (TTF-CA), originating from the one-dimensional valence and lattice instabilities, has been investigated by an electroreflectance (ER) method. Microscopic ER spectroscopy in the visible region enables real-space...<br/>[Phys. Rev. B 80, 205201] Published Fri Nov 06, 2009 Hideo Kishida, Hisashi Takamatsu, Ken Fujinuma, and Hiroshi Okamoto 2009-11-06T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.205201 Phys. Rev. B 80, 205201 text/html article Physical Review B 80 20 2009-11-06T00:00:00-05:00 205201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.195201 Author(s): Yu-Chieh Wen, Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, Jen-Inn Chyi, and Chi-Kuang Sun<br/>Using piezoelectric wurtzite semiconductor with accurate control of the crystal cut, we investigate the photogeneration of coherent shear acoustic phonons through anisotropic piezoelectric coupling. Theoretical study suggests the dominant contribution of the piezoelectric effect to the shear phonon ...<br/>[Phys. Rev. B 80, 195201] Published Fri Nov 06, 2009 Yu-Chieh Wen, Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, Jen-Inn Chyi, and Chi-Kuang Sun 2009-11-06T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.195201 Phys. Rev. B 80, 195201 text/html article Physical Review B 80 19 2009-11-06T00:00:00-05:00 195201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.193201 Author(s): Hye Jung Kim and Kyung Soo Yi<br/>We investigate temperature dependence of spin-resolved subband structure and spontaneous magnetization for different doping profiles of magnetic impurities in diluted (Ga,Mn)As quantum well structures. The self-consistent hole subband energies and wave functions are determined by solving combined Sc...<br/>[Phys. Rev. B 80, 193201] Published Mon Nov 02, 2009 Hye Jung Kim and Kyung Soo Yi 2009-11-02T00:00:00-05:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.193201 Phys. Rev. B 80, 193201 text/html article Physical Review B 80 19 2009-11-02T00:00:00-05:00 193201 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161207 Author(s): Daniele Fausti, Oleg V. Misochko, and Paul H. M. van Loosdrecht<br/>Picosecond Raman scattering is used to study the photoinduced ultrafast dynamics in Peierls distorted antimony. We find evidence for an ultrafast nonthermal reversible structural phase transition. Most surprisingly, we find evidence that this transition evolves toward a lower symmetry in contrast to...<br/><img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/><br/> <img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161207] Published Fri Oct 30, 2009 Daniele Fausti, Oleg V. Misochko, and Paul H. M. van Loosdrecht 2009-10-30T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161207 Phys. Rev. B 80, 161207 text/html article Physical Review B 80 16 2009-10-30T00:00:00-04:00 161207 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.165207 Author(s): V. Consonni, G. Feuillet, J. P. Barnes, and F. Donatini<br/>The annealing of chlorine-doped polycrystalline CdTe films leads to the occurrence of an abnormal grain structure with the formation of both primary and secondary grains, the latter being larger and growing at the expense of the former. The spatial distribution of dopants and defects has been invest...<br/>[Phys. Rev. B 80, 165207] Published Thu Oct 29, 2009 V. Consonni, G. Feuillet, J. P. Barnes, and F. Donatini 2009-10-29T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.165207 Phys. Rev. B 80, 165207 text/html article Physical Review B 80 16 2009-10-29T00:00:00-04:00 165207 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161206 Author(s): M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstrøm, and P. A. Crowell<br/>Measurements and modeling of electron-spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with n-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolariz...<br/><img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/><br/> <img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161206] Published Wed Oct 28, 2009 M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstrøm, and P. A. Crowell 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161206 Phys. Rev. B 80, 161206 text/html article Physical Review B 80 16 2009-10-28T00:00:00-04:00 161206 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155205 Author(s): J. L. Cabellos, Bernardo S. Mendoza, M. A. Escobar, F. Nastos, and J. E. Sipe<br/>Calculations of the second-harmonic susceptibility tensor χ^{abc} (−2ω;ω,ω) are presented for bulk semiconductors within both the v⋅A and the r⋅E gauges. The description of the semiconductor states incorporates the “scissors” Hamiltonian commonly used to obtain the correct band gap. Th...<br/>[Phys. Rev. B 80, 155205] Published Wed Oct 28, 2009 J. L. Cabellos, Bernardo S. Mendoza, M. A. Escobar, F. Nastos, and J. E. Sipe 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155205 Phys. Rev. B 80, 155205 text/html article Physical Review B 80 15 2009-10-28T00:00:00-04:00 155205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.153203 Author(s): B. Song, J. C. Han, J. K. Jian, H. Li, Y. C. Wang, H. Q. Bao, W. Y. Wang, H. B. Zuo, X. H. Zhang, S. H. Meng, and X. L. Chen<br/>We report the synthesis and magnetic properties characterizations of defective BN obtained from a modified solid-state reaction. X-ray diffraction analysis indicated the presence of two crystalline phases of BN in products. No magnetic impurities, such as Fe, Co, Mn, and Ni were detected by chemical...<br/>[Phys. Rev. B 80, 153203] Published Wed Oct 28, 2009 B. Song, J. C. Han, J. K. Jian, H. Li, Y. C. Wang, H. Q. Bao, W. Y. Wang, H. B. Zuo, X. H. Zhang, S. H. Meng, and X. L. Chen 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.153203 Phys. Rev. B 80, 153203 text/html article Physical Review B 80 15 2009-10-28T00:00:00-04:00 153203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.153202 Author(s): N. T. Son, C. G. Hemmingsson, T. Paskova, K. R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, B. Monemar, and E. Janzén<br/>Cation vacancies like V_{Ga} , V_{Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magn...<br/>[Phys. Rev. B 80, 153202] Published Wed Oct 28, 2009 N. T. Son, C. G. Hemmingsson, T. Paskova, K. R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, B. Monemar, and E. Janzén 2009-10-28T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.153202 Phys. Rev. B 80, 153202 text/html article Physical Review B 80 15 2009-10-28T00:00:00-04:00 153202 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155204 Author(s): Ramon Cuscó, Jordi Ibáñez, Esther Alarcón-Lladó, Luis Artús, Tomohiro Yamaguchi, and Yasushi Nanishi<br/>The effect of photoexcited electron-hole pairs on the LO-phonon-plasmon coupled modes has been observed in InN layers by means of micro-Raman experiments performed at different excitation laser powers. The L^{−} Raman peak displays an upward shift of about 10 cm^{−1} over the range of increasi...<br/>[Phys. Rev. B 80, 155204] Published Tue Oct 27, 2009 Ramon Cuscó, Jordi Ibáñez, Esther Alarcón-Lladó, Luis Artús, Tomohiro Yamaguchi, and Yasushi Nanishi 2009-10-27T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155204 Phys. Rev. B 80, 155204 text/html article Physical Review B 80 15 2009-10-27T00:00:00-04:00 155204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.155203 Author(s): J. Zemen, J. Kučera, K. Olejník, and T. Jungwirth<br/>We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence-band holes and a spin representation for their kinetic-exchange interaction wit...<br/>[Phys. Rev. B 80, 155203] Published Tue Oct 27, 2009 J. Zemen, J. Kučera, K. Olejník, and T. Jungwirth 2009-10-27T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.155203 Phys. Rev. B 80, 155203 text/html article Physical Review B 80 15 2009-10-27T00:00:00-04:00 155203 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161205 Author(s): E. Engel<br/>The role of the core-valence interaction in electronic structure calculations with the exact exchange of density-functional theory is investigated by comparison of pseudopotential with all-electron results for diamond and lithium. The same full-potential framework is applied in the case of both appr...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161205] Published Fri Oct 23, 2009 E. Engel 2009-10-23T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161205 Phys. Rev. B 80, 161205 text/html article Physical Review B 80 16 2009-10-23T00:00:00-04:00 161205 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161204 Author(s): Adi Makmal, Rickard Armiento, Eberhard Engel, Leeor Kronik, and Stephan Kümmel<br/>We present exact-exchange calculations of the Kohn-Sham gap, as well as the fundamental gap resulting from it, using highly accurate grid-based all-electron and pseudopotential approaches for prototypical diatomic molecules. Results obtained with pseudopotentials that have been constructed in a mann...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161204] Published Fri Oct 23, 2009 Adi Makmal, Rickard Armiento, Eberhard Engel, Leeor Kronik, and Stephan Kümmel 2009-10-23T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161204 Phys. Rev. B 80, 161204 text/html article Physical Review B 80 16 2009-10-23T00:00:00-04:00 161204 Semiconductors I: bulk Semiconductors I: bulk http://link.aps.org/doi/10.1103/PhysRevB.80.161203 Author(s): J. Gabelli and B. Reulet<br/>We report the measurement of higher order cumulants of the current fluctuations in an avalanche diode with a stationary dc current. Such a system is archetypal of devices in which transport is governed by a collective mechanism, in this case charge multiplication by avalanche. We have measured the f...<br/><img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 80, 161203] Published Wed Oct 21, 2009 J. Gabelli and B. Reulet 2009-10-21T00:00:00-04:00 Personal use only, all commercial or other reuse prohibited 10.1103/PhysRevB.80.161203 Phys. Rev. B 80, 161203 text/html article Physical Review B 80 16 2009-10-21T00:00:00-04:00 161203 Semiconductors I: bulk Semiconductors I: bulk