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    <title>Electron transfer through a multiterminal quantum ring: Magnetic forces and elastic scattering effects</title>
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    <description>Author(s): B. Szafran and M. R. Poniedzia&#322;ek&lt;br/&gt;We study electron transport through a semiconductor quantum ring with one input and two output terminals for an elastic scatterer present within one of the arms of the ring. We demonstrate that the scatterer not only introduces asymmetry in the transfer probability to the two output leads but also r...&lt;br/&gt;[Phys. Rev. B 80, 155334] Published Fri Oct 30, 2009</description>
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    <dc:date>2009-10-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Magneto-optical study of  n -type modulation-doped  ZnO/Mg_{x} Zn_{1&#8722;x} O  single quantum well structures</title>
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    <description>Author(s): T. Makino, Y. Furuta, Y. Segawa, A. Tsukazaki, A. Ohtomo, Y. Hirayama, R. Shen, S. Takeyama, Y. Takagi, and M. Kawasaki&lt;br/&gt;We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO(5 nm)/MgZnO single quantum wells (SQWs) by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence (PL) blueshift due to th...&lt;br/&gt;[Phys. Rev. B 80, 155333] Published Fri Oct 30, 2009</description>
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    <dc:date>2009-10-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Size, oxidation, and strain in small  Si/SiO_{2}   nanocrystals</title>
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    <description>Author(s): Roberto Guerra, Elena Degoli, and Stefano Ossicini&lt;br/&gt;The structural, electronic, and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO_{2} matrix are studied. The comparison between the embedded and free, suspended nanocrystals (NCs) shows that the silica matrix produces a str...&lt;br/&gt;[Phys. Rev. B 80, 155332] Published Thu Oct 29, 2009</description>
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    <title>Kinetics of the inner ring in the exciton emission pattern in coupled GaAs quantum wells</title>
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    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer</title>
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    <description>Author(s): V. Haxha, I. Drouzas, J. M. Ulloa, M. Bozkurt, P. M. Koenraad, D. J. Mowbray, H. Y. Liu, M. J. Steer, M. Hopkinson, and M. A. Migliorato&lt;br/&gt;We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which ex...&lt;br/&gt;[Phys. Rev. B 80, 165334] Published Wed Oct 28, 2009</description>
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    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
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    <title>Local density of states in disordered two-dimensional electron gases at high magnetic field</title>
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    <description>Author(s): Thierry Champel and Serge Florens&lt;br/&gt;Motivated by high-accuracy scanning tunneling spectroscopy measurements on disordered two-dimensional electron gases in strong magnetic field, we present an expression for the local density of states (LDoS) of electrons moving in a smooth arbitrary potential landscape on the scale of the magnetic le...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161311] Published Wed Oct 28, 2009</description>
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    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Kondo effects in a triangular triple quantum dot: Numerical renormalization group study in the whole region of the electron filling</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155330</link>
    <description>Author(s): Takahide Numata, Yunori Nisikawa, Akira Oguri, and Alex C. Hewson&lt;br/&gt;We study the low-energy properties of a triangular triple quantum dot connected to two noninteracting leads in a wide parameter range, using the numerical renormalization group (NRG). Various kinds of Kondo effects take place in this system depending on the electron filling N_{tot} , or the level po...&lt;br/&gt;[Phys. Rev. B 80, 155330] Published Wed Oct 28, 2009</description>
    <dc:creator>Takahide Numata, Yunori Nisikawa, Akira Oguri, and Alex C. Hewson</dc:creator>
    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155330</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155330</dc:source>
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    <title>Quantum size effects in competing charge and spin orderings of dangling bond wires on Si(001)</title>
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    <description>Author(s): Ji Young Lee, Jun-Hyung Cho, and Zhenyu Zhang&lt;br/&gt;Using spin-polarized density-functional theory calculations, we investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated Si(001) surface. For wires containing less than ten DBs as studied in recent experiments, we f...&lt;br/&gt;[Phys. Rev. B 80, 155329] Published Wed Oct 28, 2009</description>
    <dc:creator>Ji Young Lee, Jun-Hyung Cho, and Zhenyu Zhang</dc:creator>
    <dc:date>2009-10-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155329</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155329</dc:source>
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    <title>Negative tunnel magnetoresistance and differential conductance in transport through double quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165333</link>
    <description>Author(s): Piotr Trocha, Ireneusz Weymann, and J&#243;zef Barna&#347;&lt;br/&gt;Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear conductances, and tunnel magnetoresistance are calculated u...&lt;br/&gt;[Phys. Rev. B 80, 165333] Published Tue Oct 27, 2009</description>
    <dc:creator>Piotr Trocha, Ireneusz Weymann, and J&#243;zef Barna&#347;</dc:creator>
    <dc:date>2009-10-27T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165333</dc:identifier>
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    <title>Para-ortho transition of artificial  H_{2}   molecule in lateral quantum dots doped with magnetic impurities</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165332</link>
    <description>Author(s): Ramin M. Abolfath&lt;br/&gt;We present the magnetic phase diagram of artificial H_{2} molecule in lateral quantum dots doped with magnetic impurities as a function of external magnetic field and plunger gate voltage. The onset of Mn-Mn antiferromagnetic-ferromagnetic transition follows the electron spin singlet-triplet transit...&lt;br/&gt;[Phys. Rev. B 80, 165332] Published Tue Oct 27, 2009</description>
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    <dc:date>2009-10-27T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165331" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Microwave-assisted transport in a single-donor silicon quantum dot</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165331</link>
    <description>Author(s): Enrico Prati, Rossella Latempa, and Marco Fanciulli&lt;br/&gt;Single donors in semiconductor nanostructures represent a key element to develop spin-related quantum functionalities in atomic-scale devices. Quantum transport through a single arsenic donor in the channel of a silicon nano field-effect transistor under microwave irradiation is investigated. The de...&lt;br/&gt;[Phys. Rev. B 80, 165331] Published Tue Oct 27, 2009</description>
    <dc:creator>Enrico Prati, Rossella Latempa, and Marco Fanciulli</dc:creator>
    <dc:date>2009-10-27T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165331</dc:identifier>
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    <title>Kinetics of the evolution of InAs/GaAs quantum dots to quantum rings: A combined x-ray, atomic force microscopy, and photoluminescence study</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155328</link>
    <description>Author(s): Vikas Baranwal, Giorgio Biasiol, Stefan Heun, Andrea Locatelli, Tevfik Onur Mentes, Miguel Ni&#241;o Orti, and Lucia Sorba&lt;br/&gt;We present an experimental study of the evolution of InAs/GaAs quantum dots partially capped with GaAs, as an annealing process transforms them first into quantum rings and later into holes penetrating the whole cap layer. Shape, composition, and optical emission were monitored as a function of anne...&lt;br/&gt;&lt;img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/&gt;&lt;br/&gt; [Phys. Rev. B 80, 155328] Published Tue Oct 27, 2009</description>
    <dc:creator>Vikas Baranwal, Giorgio Biasiol, Stefan Heun, Andrea Locatelli, Tevfik Onur Mentes, Miguel Ni&#241;o Orti, and Lucia Sorba</dc:creator>
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    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155328</dc:identifier>
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    <title>Modeling study of thermoelectric SiGe nanocomposites</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155327</link>
    <description>Author(s): A. J. Minnich, H. Lee, X. W. Wang, G. Joshi, M. S. Dresselhaus, Z. F. Ren, G. Chen, and D. Vashaee&lt;br/&gt;Nanocomposite thermoelectric materials have attracted much attention recently due to experimental demonstrations of improved thermoelectric properties over those of the corresponding bulk material. In order to better understand the reported data and to gain insight into transport in nanocomposites, ...&lt;br/&gt;[Phys. Rev. B 80, 155327] Published Tue Oct 27, 2009</description>
    <dc:creator>A. J. Minnich, H. Lee, X. W. Wang, G. Joshi, M. S. Dresselhaus, Z. F. Ren, G. Chen, and D. Vashaee</dc:creator>
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    <dc:identifier>10.1103/PhysRevB.80.155327</dc:identifier>
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    <title>Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.153310</link>
    <description>Author(s): L. Sun and B. E. Kane&lt;br/&gt;By using a vertically coupled Al and Si single-electron-transistor (SET) system in a metal-oxide-semiconductor structure, we have detected a single-charge defect which is tunnel coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with...&lt;br/&gt;[Phys. Rev. B 80, 153310] Published Tue Oct 27, 2009</description>
    <dc:creator>L. Sun and B. E. Kane</dc:creator>
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    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.153310</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.153309" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Electron localization by a donor in the vicinity of a basal stacking fault in GaN</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.153309</link>
    <description>Author(s): P. Corfdir, P. Lefebvre, J. Risti&#263;, J.-D. Gani&#232;re, and B. Deveaud-Pl&#233;dran&lt;br/&gt;We study the effects of the vicinity between a shallow donor nucleus and an I_{1} -type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the &#8220;effective potential&#8221; formalism, of energies and envelope functions of electrons submitted to the conjunction of attractive potent...&lt;br/&gt;[Phys. Rev. B 80, 153309] Published Tue Oct 27, 2009</description>
    <dc:creator>P. Corfdir, P. Lefebvre, J. Risti&#263;, J.-D. Gani&#232;re, and B. Deveaud-Pl&#233;dran</dc:creator>
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    <dc:identifier>10.1103/PhysRevB.80.153309</dc:identifier>
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    <title>Quantum Hall quasielectron operators in conformal field theory</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165330</link>
    <description>Author(s): T. H. Hansson, M. Hermanns, and S. Viefers&lt;br/&gt;In the conformal field theory (CFT) approach to the quantum Hall effect, the multielectron wave functions are expressed as correlation functions in certain rational CFTs. While this approach has led to a well-understood description of the fractionally charged quasihole excitations, the quasielectron...&lt;br/&gt;[Phys. Rev. B 80, 165330] Published Mon Oct 26, 2009</description>
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    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
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    <dc:identifier>10.1103/PhysRevB.80.165330</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165329" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Phase diagram of a spinor exciton-polariton condensate in a disordered microcavity in the presence of a magnetic field</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165329</link>
    <description>Author(s): D. D. Solnyshkov, I. A. Shelykh, and G. Malpuech&lt;br/&gt;We establish a phase diagram of a spinor exciton-polariton condensate in a disordered microcavity in the presence of an external magnetic field. We find that the combination of the full paramagnetic screening and Anderson localization leads to the formation of a condensed phase having both localized...&lt;br/&gt;[Phys. Rev. B 80, 165329] Published Mon Oct 26, 2009</description>
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    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165329</dc:identifier>
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    <title>Bloch electron spontaneous emission from a single energy band in a classical ac field</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165328</link>
    <description>Author(s): V. N. Sokolov, G. J. Iafrate, and J. B. Krieger&lt;br/&gt;A theory for the spontaneous emission of radiation for a Bloch electron in a single superlattice (SL) energy band under the influence of an external, spatially homogeneous, classical ac electric field is presented. The classical external ac electric field is described in the vector-potential gauge. ...&lt;br/&gt;[Phys. Rev. B 80, 165328] Published Mon Oct 26, 2009</description>
    <dc:creator>V. N. Sokolov, G. J. Iafrate, and J. B. Krieger</dc:creator>
    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165328</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165327" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Mechanisms of the microwave photoconductivity in two-dimensional electron systems with mixed disorder</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165327</link>
    <description>Author(s): I. A. Dmitriev, M. Khodas, A. D. Mirlin, D. G. Polyakov, and M. G. Vavilov&lt;br/&gt;We present a systematic study of the microwave-induced oscillations in the magnetoresistance of a two-dimensional electron gas for mixed disorder including both short-range and long-range components. The obtained photoconductivity tensor contains contributions of four distinct transport mechanisms. ...&lt;br/&gt;[Phys. Rev. B 80, 165327] Published Mon Oct 26, 2009</description>
    <dc:creator>I. A. Dmitriev, M. Khodas, A. D. Mirlin, D. G. Polyakov, and M. G. Vavilov</dc:creator>
    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165327</dc:identifier>
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    <title>Quantum electrodynamics of a nanocavity coupled with exciton complexes in a quantum dot</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155326</link>
    <description>Author(s): Makoto Yamaguchi, Takashi Asano, Kazunobu Kojima, and Susumu Noda&lt;br/&gt;A comprehensive theory of the coupling between a nanocavity and exciton complexes in a quantum dot is developed, which successfully predicts the spectral triplet in the strong coupling regime that has been observed in several experiments but, which is unexpected according to conventional cavity quan...&lt;br/&gt;[Phys. Rev. B 80, 155326] Published Mon Oct 26, 2009</description>
    <dc:creator>Makoto Yamaguchi, Takashi Asano, Kazunobu Kojima, and Susumu Noda</dc:creator>
    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155326</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155325" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Cavity-assisted fast generation of entangled photon pairs through the biexciton-exciton cascade</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155325</link>
    <description>Author(s): P. K. Pathak and S. Hughes&lt;br/&gt;We present a scheme for the fast cavity-assisted generation of entangled photon pairs from a single quantum dot coupled to a planar photonic crystal that support two orthogonally polarized cavity modes. We discuss &#8220;within generation&#8221; and &#8220;across generation&#8221; of entangled photons when both the...&lt;br/&gt;[Phys. Rev. B 80, 155325] Published Mon Oct 26, 2009</description>
    <dc:creator>P. K. Pathak and S. Hughes</dc:creator>
    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155325</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155325</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.153308" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Polarized light in quantum dot qubit under an applied external magnetic field</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.153308</link>
    <description>Author(s): V. N. Stavrou&lt;br/&gt;Single self-assembled quantum dot (SAQD) dependence on an external magnetic field has been theoretically and numerically studied. The carrier wave functions and energy eigenvalues have been evaluated and the differences between small and large quantum dots have been explored. The current investigati...&lt;br/&gt;[Phys. Rev. B 80, 153308] Published Mon Oct 26, 2009</description>
    <dc:creator>V. N. Stavrou</dc:creator>
    <dc:date>2009-10-26T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.153308</dc:identifier>
    <dc:source>Phys. Rev. B 80, 153308</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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    <title>Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165326</link>
    <description>Author(s): A. R. Stegner, R. N. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, and M. S. Brandt&lt;br/&gt;Electron paramagnetic resonance (EPR) and secondary-ion mass spectroscopy have been used to quantitatively investigate the phosphorus doping of freestanding silicon nanocrystals (Si-NCs) in a wide range of diameters. It is found that both the atomic phosphorus incorporation efficiency of 100% and it...&lt;br/&gt;[Phys. Rev. B 80, 165326] Published Fri Oct 23, 2009</description>
    <dc:creator>A. R. Stegner, R. N. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, and M. S. Brandt</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165326</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165326</dc:source>
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    <prism:publicationDate>2009-10-23T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165326</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165325" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Anisotropic optical spin Hall effect in semiconductor microcavities</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165325</link>
    <description>Author(s): A. Amo, T. C. H. Liew, C. Adrados, E. Giacobino, A. V. Kavokin, and A. Bramati&lt;br/&gt;Propagating, directionally dependent, polarized spin currents are created in an anisotropic planar semiconductor microcavity, via Rayleigh scattering of optically injected polaritons in the optical spin Hall regime. The influence of anisotropy results in suppression or enhancement of the pseudospin ...&lt;br/&gt;[Phys. Rev. B 80, 165325] Published Fri Oct 23, 2009</description>
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    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
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    <dc:identifier>10.1103/PhysRevB.80.165325</dc:identifier>
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    <title>Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.161310</link>
    <description>Author(s): Robert N. McFarland, Tomasz M. Kott, Luyan Sun, K. Eng, and B. E. Kane&lt;br/&gt;Low-field magnetotransport measurements on a high-mobility (&#956;=110,000&#8194;cm^{2} /Vs) two-dimensional electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting &#8804;0.1&#8194;K . The zero-field resistivity &#961;_{xx} displays strong temperature dependence for...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161310] Published Fri Oct 23, 2009</description>
    <dc:creator>Robert N. McFarland, Tomasz M. Kott, Luyan Sun, K. Eng, and B. E. Kane</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.161310</dc:identifier>
    <dc:source>Phys. Rev. B 80, 161310</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155324" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Modified Coulomb gas construction of quantum Hall states from nonunitary conformal field theories</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155324</link>
    <description>Author(s): M. V. Milovanovi&#263;, Th. Jolicoeur, and I. Vidanovi&#263;&lt;br/&gt;Some fractional quantum Hall states observed in experiments may be described by first-quantized wavefunctions with special clustering properties such as the Moore-Read Pfaffian for filling factor &#957;=5/2 . This wavefunction has been constructed by constructing correlation functions of a two-dimension...&lt;br/&gt;[Phys. Rev. B 80, 155324] Published Fri Oct 23, 2009</description>
    <dc:creator>M. V. Milovanovi&#263;, Th. Jolicoeur, and I. Vidanovi&#263;</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155324</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155324</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155323" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Proposals of nuclear spin quantum memory in group-IV elemental and II-VI semiconductors</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155323</link>
    <description>Author(s): &#214;zg&#252;r &#199;ak&#305;r and Toshihide Takagahara&lt;br/&gt;Schemes for the nuclear spin quantum memory are proposed based on a system composed of two electrons or one electron coupled to a single nuclear spin in isotopically purified group-IV elemental and II-VI compound semiconductors. The qubit consists of the singlet state and one of the triplet states o...&lt;br/&gt;[Phys. Rev. B 80, 155323] Published Fri Oct 23, 2009</description>
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    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155323</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155323</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.155322" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Theory of nonequilibrium transport in the  SU(N)  Kondo regime</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.155322</link>
    <description>Author(s): Christophe Mora, Pavel Vitushinsky, Xavier Leyronas, Aashish A. Clerk, and Karyn Le Hur&lt;br/&gt;Using a Fermi-liquid approach, we provide a comprehensive treatment of the current and current noise through a quantum dot whose low-energy behavior corresponds to an SU(N) Kondo model, focusing on the case N=4 relevant to carbon nanotube dots. We show that for general N , one needs to consider the ...&lt;br/&gt;&lt;img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/&gt;&lt;br/&gt; [Phys. Rev. B 80, 155322] Published Fri Oct 23, 2009</description>
    <dc:creator>Christophe Mora, Pavel Vitushinsky, Xavier Leyronas, Aashish A. Clerk, and Karyn Le Hur</dc:creator>
    <dc:date>2009-10-23T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.155322</dc:identifier>
    <dc:source>Phys. Rev. B 80, 155322</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.165324" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Bidentate chemisorption of acetic acid on a  Si(001)-(2&#215;1)  surface: Experimental and theoretical investigations</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.165324</link>
    <description>Author(s): Masaru Shimomura, Takenori K. Kawaguchi, Yasuo Fukuda, Kenji Murakami, A. Z. AlZahrani, and G. P. Srivastava&lt;br/&gt;Adsorption of acetic acid on the Si(001)-(2&#215;1) surface is studied by x-ray photoelectron spectroscopy (XPS), scanning-tunneling microscopy (STM), and ab initio calculations. We find that C&#8201;1s line of the acetic acid on the surface is composed of mainly methyl and adsorbed carboxyl groups. The fil...&lt;br/&gt;[Phys. Rev. B 80, 165324] Published Thu Oct 22, 2009</description>
    <dc:creator>Masaru Shimomura, Takenori K. Kawaguchi, Yasuo Fukuda, Kenji Murakami, A. Z. AlZahrani, and G. P. Srivastava</dc:creator>
    <dc:date>2009-10-22T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.165324</dc:identifier>
    <dc:source>Phys. Rev. B 80, 165324</dc:source>
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    <prism:publicationDate>2009-10-22T00:00:00-04:00</prism:publicationDate>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.161309" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Measuring the entanglement between double quantum dot charge qubits</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.161309</link>
    <description>Author(s): Clive Emary&lt;br/&gt;We present a scheme for creating and measuring entanglement between two double quantum dot charge qubits in a transport setup in which voltage pulses can modify system parameters. Detection of entanglement is performed via the construction of a Bell inequality with current correlation measurements. ...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 161309] Published Thu Oct 22, 2009</description>
    <dc:creator>Clive Emary</dc:creator>
    <dc:date>2009-10-22T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.161309</dc:identifier>
    <dc:source>Phys. Rev. B 80, 161309</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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