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    <description>Recently published articles in Phys. Rev. B in the Table of Content section "Semiconductors II: surfaces, interfaces, microstructures, and related topics"</description>
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    <dc:rights>Copyright (c) 2008 The American Physical Society</dc:rights>
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    <title>Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.205304</link>
    <description>Author(s): Deepthi Gopireddy and Christos G. Takoudis&lt;br/&gt;We present the quantitative physicochemical modeling of the thermal annealing of high dielectric constant (k) thin films on silicon in oxygen and/or inert ambient. In particular, we study the kinetics of the SiO_{2} interfacial layer growth at the high- k material structure/Si interface. Upon anneal...&lt;br/&gt;[Phys. Rev. B 77, 205304] Published Mon May 05, 2008</description>
    <dc:creator>Deepthi Gopireddy and Christos G. Takoudis</dc:creator>
    <dc:date>2008-05-05T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.195305">
    <title>Dynamics-controlled truncation scheme for quantum optics and nonlinear dynamics in semiconductor microcavities</title>
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    <description>Author(s): S. Portolan, O. Di Stefano, S. Savasta, F. Rossi, and R. Girlanda&lt;br/&gt;We present a systematic theory of Coulomb-induced correlation effects in the nonlinear optical processes within the strong-coupling regime. In this paper, we shall set a dynamics controlled truncation scheme microscopic treatment of nonlinear parametric processes in semiconductor microcavities inclu...&lt;br/&gt;[Phys. Rev. B 77, 195305] Published Mon May 05, 2008</description>
    <dc:creator>S. Portolan, O. Di Stefano, S. Savasta, F. Rossi, and R. Girlanda</dc:creator>
    <dc:date>2008-05-05T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.195305</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.193302">
    <title>Spin Hall effect in a symmetric quantum well by a random Rashba field</title>
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    <description>Author(s): C. P. Moca, D. C. Marinescu, and S. Filip&lt;br/&gt;Dopant ion concentrations in the sides of a symmetric quantum well are known to create a random Rashba-type spin-orbit coupling. Here, we demonstrate that, as a consequence, a finite size spin Hall effect is also present. Our numerical algorithm estimates the result of the Kubo formula for the spin ...&lt;br/&gt;[Phys. Rev. B 77, 193302] Published Mon May 05, 2008</description>
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    <dc:date>2008-05-05T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.205303">
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    <description>Author(s): A. Bruno-Alfonso and A. Latg&#233;&lt;br/&gt;The electronic states of quantum rings with centerlines of arbitrary shape and non-uniform width in a threading magnetic field are calculated. The solutions of the Schr&#246;dinger equation with Dirichlet boundary conditions are obtained by a variational separation of variables in curvilinear coordinate...&lt;br/&gt;[Phys. Rev. B 77, 205303] Published Fri May 02, 2008</description>
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    <title>Polarization memory decay spectroscopy of photoexcitations in  &#960; -conjugated polymers: Evidence for excimers</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.195304</link>
    <description>Author(s): Sanjeev Singh, Tomer Drori, and Z. Valy Vardeny&lt;br/&gt;We used the technique of ultrafast transient polarized photomodulation in the visible/near-infrared range and polarization memory decay (PMD) spectroscopy to study the primary photoexcitations in films and solutions of two poly(phenylene-vinylene) (PPV) derivatives, namely, 2-methoxy-5-( 2^{&#8242;} -et...&lt;br/&gt;[Phys. Rev. B 77, 195304] Published Fri May 02, 2008</description>
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    <dc:date>2008-05-02T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Influence of the mirrors on the strong coupling regime in planar GaN microcavities</title>
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    <description>Author(s): F. R&#233;veret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, and J. Massies&lt;br/&gt;The optical properties of bulk &#955;&#8725;2 GaN microcavities working in the strong light-matter coupling regime are investigated by using angle-dependent reflectivity and photoluminescence at 5 and 300K . The structures have an Al_{0.2} Ga_{0.8} N&#8725;AlN distributed Bragg reflector as the bottom mirror an...&lt;br/&gt;[Phys. Rev. B 77, 195303] Published Fri May 02, 2008</description>
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    <dc:date>2008-05-02T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.195303</dc:identifier>
    <dc:source>Phys. Rev. B 77, 195303</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.195302">
    <title>Coulomb effects in open quantum dots within the random-phase approximation</title>
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    <description>Author(s): V. Moldoveanu and B. Tanatar&lt;br/&gt;The effect of electron-electron interactions on coherent transport in quantum dot systems is theoretically investigated by adapting the well-known random-phase approximation (RPA) to the nonequilibrium Green&#8211;Keldysh formalism for open mesoscopic systems. The contour-ordered polarization operator i...&lt;br/&gt;[Phys. Rev. B 77, 195302] Published Fri May 02, 2008</description>
    <dc:creator>V. Moldoveanu and B. Tanatar</dc:creator>
    <dc:date>2008-05-02T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <dc:source>Phys. Rev. B 77, 195302</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.205302">
    <title>Spin-dependent electron transport in two-dimensional waveguides of arbitrary geometry</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.205302</link>
    <description>Author(s): Gursoy B. Akguc and Jiangbin Gong&lt;br/&gt;An efficient computational approach to spin-dependent electron transport in two-dimensional waveguides with rather arbitrary geometry is presented, with necessary details about how to include the spin-orbit Rashba coupling and the so-called evanescent modes. The spin conductance properties are then ...&lt;br/&gt;[Phys. Rev. B 77, 205302] Published Thu May 01, 2008</description>
    <dc:creator>Gursoy B. Akguc and Jiangbin Gong</dc:creator>
    <dc:date>2008-05-01T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.205302</dc:identifier>
    <dc:source>Phys. Rev. B 77, 205302</dc:source>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.205301">
    <title>Unusual mosaic image of the  Si(111)-(7&#215;7)  surface coinciding with field emission resonance in scanning tunneling microscopy</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.205301</link>
    <description>Author(s): Keisuke Sagisaka and Daisuke Fujita&lt;br/&gt;Scanning tunneling microscopy in field emission mode (with atomic resolution) reveals an unfamiliar topographic image of a clean Si(111) surface, so-called mosaic patterns, within a narrow range of high sample bias, in contrast to the conventional (7&#215;7) superstructure observed at low sample bias. T...&lt;br/&gt;[Phys. Rev. B 77, 205301] Published Thu May 01, 2008</description>
    <dc:creator>Keisuke Sagisaka and Daisuke Fujita</dc:creator>
    <dc:date>2008-05-01T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.205301</dc:identifier>
    <dc:source>Phys. Rev. B 77, 205301</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.195301">
    <title>Simulation of J-aggregate microcavity photoluminescence</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.195301</link>
    <description>Author(s): Paolo Michetti and Giuseppe C. La Rocca&lt;br/&gt;We have developed a model in order to account for the photoexcitation dynamics of J-aggregate films and strongly coupled J-aggregate microcavities. The J aggregates are described as a disordered Frenkel exciton system in which relaxation occurs due to the presence of a thermal bath of molecular vibr...&lt;br/&gt;[Phys. Rev. B 77, 195301] Published Thu May 01, 2008</description>
    <dc:creator>Paolo Michetti and Giuseppe C. La Rocca</dc:creator>
    <dc:date>2008-05-01T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.195301</dc:identifier>
    <dc:source>Phys. Rev. B 77, 195301</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.193301">
    <title>Dopant stability and strain states in Co and Mn-doped Ge (001) epitaxial films</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.193301</link>
    <description>Author(s): B. A. Collins, Y. S. Chu, L. He, Y. Zhong, and F. Tsui&lt;br/&gt;Systematic investigation of structural, chemical, and magnetic properties of Co and Mn-doped Ge (001) as a function of doping concentration reveals that codoping with Co can dramatically reduce phase separation and diffusion of Mn within the Ge lattice while it magnetically complements Mn. The measu...&lt;br/&gt;[Phys. Rev. B 77, 193301] Published Thu May 01, 2008</description>
    <dc:creator>B. A. Collins, Y. S. Chu, L. He, Y. Zhong, and F. Tsui</dc:creator>
    <dc:date>2008-05-01T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.193301</dc:identifier>
    <dc:source>Phys. Rev. B 77, 193301</dc:source>
    <dc:format>text/html</dc:format>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165341">
    <title>Quantum and classical multiple-scattering effects in the spin dynamics of cavity polaritons</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165341</link>
    <description>Author(s): M. M. Glazov and L. E. Golub&lt;br/&gt;The transport properties of exciton-polaritons are studied with allowance for their polarization. Both classical multiple scattering effects and quantum effects such as weak localization are taken into account in the framework of a generalized kinetic equation. The longitudinal-transverse (TE-TM) sp...&lt;br/&gt;[Phys. Rev. B 77, 165341] Published Wed Apr 30, 2008</description>
    <dc:creator>M. M. Glazov and L. E. Golub</dc:creator>
    <dc:date>2008-04-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165341</dc:identifier>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165340">
    <title>Many-body excitations in the tunneling current spectra of a few-electron quantum dot</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165340</link>
    <description>Author(s): D. V. Melnikov, T. Fujisawa, D. G. Austing, S. Tarucha, and J.-P. Leburton&lt;br/&gt;Inherent asymmetry in the tunneling barriers of few-electron quantum dots induces intrinsically different tunneling currents for forward and reverse source-drain biases in the nonlinear transport regime. We demonstrate that in addition to spin selection rules, overlap matrix elements between many-bo...&lt;br/&gt;[Phys. Rev. B 77, 165340] Published Wed Apr 30, 2008</description>
    <dc:creator>D. V. Melnikov, T. Fujisawa, D. G. Austing, S. Tarucha, and J.-P. Leburton</dc:creator>
    <dc:date>2008-04-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165340</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165340</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165340</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.161306">
    <title>Optical spectra and exchange-correlation effects in molecular crystals</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.161306</link>
    <description>Author(s): Na Sai, Murilo L. Tiago, James R. Chelikowsky, and Fernando A. Reboredo&lt;br/&gt;We report the first-principles GW -Bethe&#8211;Salpeter equation and quantum Monte Carlo calculations of the optical and electronic properties of molecular and crystalline rubrene (C_{42} H_{28} ) . Many-body effects dominate the optical spectrum and quasiparticle gap of molecular crystals. We interpret...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 77, 161306] Published Wed Apr 30, 2008</description>
    <dc:creator>Na Sai, Murilo L. Tiago, James R. Chelikowsky, and Fernando A. Reboredo</dc:creator>
    <dc:date>2008-04-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.161306</dc:identifier>
    <dc:source>Phys. Rev. B 77, 161306</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>161306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.153309">
    <title>Coherence of terahertz emission from photoexcited electron-hole plasma: Hydrodynamic model and Monte Carlo simulations</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.153309</link>
    <description>Author(s): A. Reklaitis&lt;br/&gt;Terahertz emission from the electron-hole plasma excited by the femtosecond laser pulse in semiconductor structures is analyzed. It is shown that plasma excitations in the homogeneous structures are incoherent. The incoherence of the excitations essentially reduces the intensity of terahertz radiati...&lt;br/&gt;[Phys. Rev. B 77, 153309] Published Wed Apr 30, 2008</description>
    <dc:creator>A. Reklaitis</dc:creator>
    <dc:date>2008-04-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.153309</dc:identifier>
    <dc:source>Phys. Rev. B 77, 153309</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>153309</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.153308">
    <title>Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.153308</link>
    <description>Author(s): A. Schramm, S. Schulz, Ch. Heyn, and W. Hansen&lt;br/&gt;Electron emission from charged self-assembled InAs quantum dots is studied by means of deep level transient spectroscopy in strong magnetic fields applied parallel to the quantum-dot layer. Since a magnetic field oriented parallel to the quantum-dot layer strongly suppresses electron tunneling our e...&lt;br/&gt;[Phys. Rev. B 77, 153308] Published Wed Apr 30, 2008</description>
    <dc:creator>A. Schramm, S. Schulz, Ch. Heyn, and W. Hansen</dc:creator>
    <dc:date>2008-04-30T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.153308</dc:identifier>
    <dc:source>Phys. Rev. B 77, 153308</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-30T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>153308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165339">
    <title>Unusual scarcity in the optical absorption of metallic quantum-dot nanorings described by the extended Hubbard model</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165339</link>
    <description>Author(s): Ioan B&#226;ldea and Lorenz S. Cederbaum&lt;br/&gt;We report results of a systematic analysis of optical absorption in finite metallic quantum-dot nanorings containing a variable number of electrons described by the extended Hubbard model. Despite the very strong electron correlations, the number of significant spectral lines is astonishingly small,...&lt;br/&gt;[Phys. Rev. B 77, 165339] Published Tue Apr 29, 2008</description>
    <dc:creator>Ioan B&#226;ldea and Lorenz S. Cederbaum</dc:creator>
    <dc:date>2008-04-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165339</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165339</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165339</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165338">
    <title>Overhauser effect in individual  InP&#8725;Ga_{x} In_{1&#8722;x} P  dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165338</link>
    <description>Author(s): J. Skiba-Szymanska, E. A. Chekhovich, A. E. Nikolaenko, A. I. Tartakovskii, M. N. Makhonin, I. Drouzas, M. S. Skolnick, and A. B. Krysa&lt;br/&gt;Sizable nuclear spin polarization is pumped in individual electron-charged InP&#8725;GaInP dots in a wide range of external magnetic fields B_{Z} =0&#8211;5T by circularly polarized optical excitation. We observe nuclear polarization of up to &#8776;40% at B_{Z} =1.5T corresponding to an Overhauser field of &#8776;...&lt;br/&gt;[Phys. Rev. B 77, 165338] Published Tue Apr 29, 2008</description>
    <dc:creator>J. Skiba-Szymanska, E. A. Chekhovich, A. E. Nikolaenko, A. I. Tartakovskii, M. N. Makhonin, I. Drouzas, M. S. Skolnick, and A. B. Krysa</dc:creator>
    <dc:date>2008-04-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165338</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165338</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165338</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165337">
    <title>Nonequilibrium polaron hopping transport through DNA</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165337</link>
    <description>Author(s): Benjamin B. Schmidt, Matthias H. Hettler, and Gerd Sch&#246;n&lt;br/&gt;We study the electronic transport through short DNA chains with various sequences of base pairs between voltage-biased leads. The strong coupling of the charge carriers to local vibrations of the base pairs leads to the formation of polarons, and in the relevant temperature range the transport is ac...&lt;br/&gt;[Phys. Rev. B 77, 165337] Published Tue Apr 29, 2008</description>
    <dc:creator>Benjamin B. Schmidt, Matthias H. Hettler, and Gerd Sch&#246;n</dc:creator>
    <dc:date>2008-04-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165337</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165337</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165337</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165336">
    <title>Substrate-dependent electronic structure of an organic heterojunction</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165336</link>
    <description>Author(s): Wei Zhao, Eric Salomon, Qing Zhang, Stephen Barlow, Seth R. Marder, and Antoine Kahn&lt;br/&gt;This work focuses on organic-organic heterojunctions (OOHs) formed between two small-molecule, low band-gap, semiconductors, tris{2,5-bis(3,5-bis-trifluoromethyl-phenyl)-thieno} [3,4-b, h,n]-1,4,5, 8,9,12 -hexaaza-triphenylene (THAP), and copper phthalocyanine (CuPc). The organic layers are deposite...&lt;br/&gt;[Phys. Rev. B 77, 165336] Published Tue Apr 29, 2008</description>
    <dc:creator>Wei Zhao, Eric Salomon, Qing Zhang, Stephen Barlow, Seth R. Marder, and Antoine Kahn</dc:creator>
    <dc:date>2008-04-29T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165336</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165336</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-29T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165336</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165335">
    <title>Zero-field spin splitting and spin lifetime in  n-InSb&#8725;In_{1&#8722;x} Al_{x} Sb  asymmetric quantum well heterostructures</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165335</link>
    <description>Author(s): A. M. Gilbertson, M. Fearn, J. H. Jefferson, B. N. Murdin, P. D. Buckle, and L. F. Cohen&lt;br/&gt;The spin-orbit (SO) coupling parameters for the lowest conduction subband due to structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) are calculated for a range of carrier densities in [001]-grown &#948; -doped n -type InSb&#8725;In_{1&#8722;x} Al_{x} Sb quantum wells using the established ei...&lt;br/&gt;[Phys. Rev. B 77, 165335] Published Mon Apr 28, 2008</description>
    <dc:creator>A. M. Gilbertson, M. Fearn, J. H. Jefferson, B. N. Murdin, P. D. Buckle, and L. F. Cohen</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165335</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165335</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165335</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.165334">
    <title>Electronic transport in modulation-doped InSb quantum well heterostructures</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.165334</link>
    <description>Author(s): J. M. S. Orr, A. M. Gilbertson, M. Fearn, O. W. Croad, C. J. Storey, L. Buckle, M. T. Emeny, P. D. Buckle, and T. Ashley&lt;br/&gt;The mobility and carrier concentration of a number of InSb-based modulation-doped quantum well heterostructures are examined over a range of temperatures between 4.5 and 300 K. Wide well (30 nm) and narrow well (15 nm) structures are measured. The temperature dependent mobilities are considered with...&lt;br/&gt;[Phys. Rev. B 77, 165334] Published Mon Apr 28, 2008</description>
    <dc:creator>J. M. S. Orr, A. M. Gilbertson, M. Fearn, O. W. Croad, C. J. Storey, L. Buckle, M. T. Emeny, P. D. Buckle, and T. Ashley</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.165334</dc:identifier>
    <dc:source>Phys. Rev. B 77, 165334</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>165334</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.161305">
    <title>Optical alignment and polarization conversion of the neutral-exciton spin in individual  InAs&#8725;GaAs  quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.161305</link>
    <description>Author(s): K. Kowalik, O. Krebs, A. Lema&#238;tre, J. A. Gaj, and P. Voisin&lt;br/&gt;We investigate exciton spin memory in individual InAs&#8725;GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the initial spin polarization of neutral excitons. Th...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 77, 161305] Published Mon Apr 28, 2008</description>
    <dc:creator>K. Kowalik, O. Krebs, A. Lema&#238;tre, J. A. Gaj, and P. Voisin</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.161305</dc:identifier>
    <dc:source>Phys. Rev. B 77, 161305</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>16</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>161305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.155328">
    <title>Electric field effect on electron spin splitting in  SiGe&#8725;Si  quantum wells</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.155328</link>
    <description>Author(s): M. O. Nestoklon, E. L. Ivchenko, J.-M. Jancu, and P. Voisin&lt;br/&gt;Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been theoretically studied. Microscopic calculations of valley and spin splittings are performed in the efficient sp^{3} d^{5} s^{*} tight-binding model. In accordance with the symmetry considerations, the electric field not ...&lt;br/&gt;[Phys. Rev. B 77, 155328] Published Mon Apr 28, 2008</description>
    <dc:creator>M. O. Nestoklon, E. L. Ivchenko, J.-M. Jancu, and P. Voisin</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.155328</dc:identifier>
    <dc:source>Phys. Rev. B 77, 155328</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155328</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.155327">
    <title>Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-oriented  InGaAs&#8725;GaAs  quantum wells</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.155327</link>
    <description>Author(s): S. P. &#321;epkowski&lt;br/&gt;We investigate the effect of second-order piezoelectricity on the pressure coefficient of the light emission (dE_{E} &#8725;dP) in (111)-oriented InGaAs&#8725;GaAs quantum wells (QWs). In the framework of continuum theory of elasticity and piezoelectricity, we propose the analytic model of pressure tuning o...&lt;br/&gt;[Phys. Rev. B 77, 155327] Published Mon Apr 28, 2008</description>
    <dc:creator>S. P. &#321;epkowski</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.155327</dc:identifier>
    <dc:source>Phys. Rev. B 77, 155327</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155327</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.155326">
    <title>Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.155326</link>
    <description>Author(s): C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, and A. Fontcuberta i Morral&lt;br/&gt;The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a...&lt;br/&gt;[Phys. Rev. B 77, 155326] Published Mon Apr 28, 2008</description>
    <dc:creator>C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, and A. Fontcuberta i Morral</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.155326</dc:identifier>
    <dc:source>Phys. Rev. B 77, 155326</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155326</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.153307">
    <title>Generation and measurement of nonequilibrium spin currents in two-terminal systems</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.153307</link>
    <description>Author(s): T. P. Pareek and A. M. Jayannavar&lt;br/&gt;Generation and measurement of nonequilibrium spin current in two probe phase coherent conductors are discussed. It is argued and shown that spin current can be generated in a two-terminal nonmagnetic system by application of electrical voltage. These spin currents can be measured via conductance in ...&lt;br/&gt;[Phys. Rev. B 77, 153307] Published Mon Apr 28, 2008</description>
    <dc:creator>T. P. Pareek and A. M. Jayannavar</dc:creator>
    <dc:date>2008-04-28T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.153307</dc:identifier>
    <dc:source>Phys. Rev. B 77, 153307</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-28T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>153307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.155325">
    <title>Exciton polariton kinematic interaction in crystalline organic microcavities</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.155325</link>
    <description>Author(s): Marina Litinskaya&lt;br/&gt;The kinematic interaction between cavity polaritons in a crystalline organic microcavity is examined, and a general analytical expression for the scattering amplitude for two cavity polaritons with zero total wave vector is derived. It is shown that if two incoming polaritons can scatter into excito...&lt;br/&gt;[Phys. Rev. B 77, 155325] Published Fri Apr 25, 2008</description>
    <dc:creator>Marina Litinskaya</dc:creator>
    <dc:date>2008-04-25T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.155325</dc:identifier>
    <dc:source>Phys. Rev. B 77, 155325</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-25T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155325</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.155324">
    <title>Modulation of bilayer quantum Hall states by tilted-field-induced subband-Landau-level coupling</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.155324</link>
    <description>Author(s): N. Kumada, K. Iwata, K. Tagashira, Y. Shimoda, K. Muraki, Y. Hirayama, and A. Sawada&lt;br/&gt;We study effects of tilted magnetic fields on energy levels in a double-quantum-well (DQW) system, focusing on the coupling of subbands and Landau levels (LLs). The subband-LL coupling induces anticrossings between LLs directly manifested in the magnetoresistance. The anticrossing gap becomes larger...&lt;br/&gt;[Phys. Rev. B 77, 155324] Published Thu Apr 24, 2008</description>
    <dc:creator>N. Kumada, K. Iwata, K. Tagashira, Y. Shimoda, K. Muraki, Y. Hirayama, and A. Sawada</dc:creator>
    <dc:date>2008-04-24T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.155324</dc:identifier>
    <dc:source>Phys. Rev. B 77, 155324</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-24T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155324</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.77.155323">
    <title>8-band  k.p  modeling of the quantum confined Stark effect in Ge quantum wells on Si substrates</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.77.155323</link>
    <description>Author(s): D. J. Paul&lt;br/&gt;Recent work using compressively strained-Ge quantum wells grown on Si_{1&#8722;y} Ge_{y} virtual substrates has demonstrated efficient modulation on a silicon substrate through the quantum confined Stark effect with performance comparable to many direct band gap III-V materials. The absorption of compre...&lt;br/&gt;[Phys. Rev. B 77, 155323] Published Thu Apr 24, 2008</description>
    <dc:creator>D. J. Paul</dc:creator>
    <dc:date>2008-04-24T00:00:00-04:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.77.155323</dc:identifier>
    <dc:source>Phys. Rev. B 77, 155323</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>77</prism:volume>
    <prism:issueIdentifier>15</prism:issueIdentifier>
    <prism:publicationDate>2008-04-24T00:00:00-04:00</prism:publicationDate>
    <prism:startingPage>155323</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
</rdf:RDF>
