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    <title>First-principles study of back-contact effects on CdTe thin-film solar cells</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205322</link>
    <description>Author(s): Mao-Hua Du&lt;br/&gt;Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb_{2} Te_{3} , on the performance of the CdTe solar cells. First-principles calcu...&lt;br/&gt;[Phys. Rev. B 80, 205322] Published Fri Nov 20, 2009</description>
    <dc:creator>Mao-Hua Du</dc:creator>
    <dc:date>2009-11-20T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Charge transfer statistics in symmetric fractional edge-state Mach-Zehnder interferometer</title>
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    <description>Author(s): V. V. Ponomarenko and D. V. Averin&lt;br/&gt;We have studied the zero-temperature statistics of charge transfer between the two edges of quantum Hall liquids with filling factors &#957;_{0,1} =1/(2m_{0,1} +1) forming Mach-Zehnder interferometer. The known Bethe ansatz solution for symmetric interferometer is used to obtain the cumulant-generating ...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201313] Published Fri Nov 20, 2009</description>
    <dc:creator>V. V. Ponomarenko and D. V. Averin</dc:creator>
    <dc:date>2009-11-20T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Electronic entanglement via quantum Hall interferometry in analogy to an optical method</title>
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    <description>Author(s): Diego Frustaglia and Ad&#225;n Cabello&lt;br/&gt;We present an interferometric scheme producing orbital entanglement in a quantum Hall system upon electron-hole pair emission via tunneling. The proposed setup is an electronic version of the optical interferometer proposed by Cabello [Phys. Rev. Lett. 102, 040401 (2009)] and is feasible with the pr...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201312] Published Fri Nov 20, 2009</description>
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    <dc:date>2009-11-20T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset</title>
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    <description>Author(s): Moritz Brehm, Francesco Montalenti, Martyna Grydlik, Guglielmo Vastola, Herbert Lichtenberger, Nina Hrauda, Matthew J. Beck, Thomas Fromherz, Friedrich Sch&#228;ffler, Leo Miglio, and G&#252;nther Bauer&lt;br/&gt;The commonly accepted Stranski-Krastanow model, according to which island formation occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological evolution an increasing island aspect ratio with volume. We report on an apparent violation of this thermodynamic understan...&lt;br/&gt;[Phys. Rev. B 80, 205321] Published Thu Nov 19, 2009</description>
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    <title>Terahertz photoresponse of a quantum Hall edge-channel diode</title>
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    <description>Author(s): Christian Notthoff, Kevin Rachor, Detlef Heitmann, and Axel Lorke&lt;br/&gt;The terahertz (THz) photoresponse of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a sample structure which is topologically equivalent to a Corbino geometry combined with a cross-gate technique. This quasi-Corbino geometry allows us to directly investigate the TH...&lt;br/&gt;[Phys. Rev. B 80, 205320] Published Thu Nov 19, 2009</description>
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    <title>GW investigation of interface-induced correlation effects on transport properties in realistic nanoscale structures</title>
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    <description>Author(s): Changsheng Li, M. Bescond, and M. Lannoo&lt;br/&gt;We report a theoretical investigation of long-range correlation effects induced by the presence of interfaces in realistic semiconductor based nanoscale structures. This is performed within the so-called GW approximation of Hedin and Lundqvist in which we isolate the contribution of the interfaces w...&lt;br/&gt;[Phys. Rev. B 80, 195318] Published Thu Nov 19, 2009</description>
    <dc:creator>Changsheng Li, M. Bescond, and M. Lannoo</dc:creator>
    <dc:date>2009-11-19T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Statistics of quantum transfer of noninteracting fermions in multiterminal junctions</title>
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    <description>Author(s): Dania Kambly and D. A. Ivanov&lt;br/&gt;Similarly to the recently obtained result for two-terminal systems, we show that there are constraints on the full counting statistics for noninteracting fermions in multiterminal contacts. In contrast to the two-terminal result, however, there is no factorization property in the multiterminal case....&lt;br/&gt;[Phys. Rev. B 80, 193306] Published Thu Nov 19, 2009</description>
    <dc:creator>Dania Kambly and D. A. Ivanov</dc:creator>
    <dc:date>2009-11-19T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
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    <title>Masses in graphenelike two-dimensional electronic systems: Topological defects in order parameters and their fractional exchange statistics</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205319</link>
    <description>Author(s): Shinsei Ryu, Christopher Mudry, Chang-Yu Hou, and Claudio Chamon&lt;br/&gt;We classify all possible 36 gap-opening instabilities in graphenelike structures in two dimensions, i.e., masses of Dirac Hamiltonian when the spin, valley, and superconducting channels are included. These 36 order parameters break up into 56 possible quintuplets of masses that add in quadrature and...&lt;br/&gt;&lt;img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/&gt;&lt;br/&gt; [Phys. Rev. B 80, 205319] Published Wed Nov 18, 2009</description>
    <dc:creator>Shinsei Ryu, Christopher Mudry, Chang-Yu Hou, and Claudio Chamon</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205319</dc:identifier>
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    <title>Controlling and enhancing terahertz collective electron dynamics in superlattices by chaos-assisted miniband transport</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205318</link>
    <description>Author(s): M. T. Greenaway, A. G. Balanov, E. Sch&#246;ll, and T. M. Fromhold&lt;br/&gt;We show that a tilted magnetic field transforms the structure and THz dynamics of charge domains in a biased semiconductor superlattice. At critical field values, strong coupling between the Bloch and cyclotron motion of a miniband electron triggers chaotic delocalization of the electron orbits, cau...&lt;br/&gt;[Phys. Rev. B 80, 205318] Published Wed Nov 18, 2009</description>
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    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205318</dc:identifier>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205317" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Extended excitons and compact heliumlike biexcitons in type-II quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205317</link>
    <description>Author(s): Bhavtosh Bansal, S. Godefroo, M. Hayne, G. Medeiros-Ribeiro, and V. V. Moshchalkov&lt;br/&gt;We have used magnetophotoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15 nm and 1.5 meV, respectively. When compared to bulk InP, the excitonic binding is weak...&lt;br/&gt;[Phys. Rev. B 80, 205317] Published Wed Nov 18, 2009</description>
    <dc:creator>Bhavtosh Bansal, S. Godefroo, M. Hayne, G. Medeiros-Ribeiro, and V. V. Moshchalkov</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205317</dc:identifier>
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    <title>Role of electronic excitations in the energy loss of  H_{2}^{+}   projectiles in high- &#954;  materials</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205316</link>
    <description>Author(s): S. M. Shubeita, R. C. Fadanelli, J. F. Dias, P. L. Grande, C. D. Denton, I. Abril, R. Garcia-Molina, and N. R. Arista&lt;br/&gt;In the present work we report on the energy loss ratio R_{n} of fast H_{2}^{+} clusters in thin films (30&#8211;50&#8194;&#197;) of LaScO_{3} and HfO_{2} . The medium energy ion scattering technique was employed covering a broad energy range (40&#8211;200 keV/amu). The energy loss ratio data showed no clear evidenc...&lt;br/&gt;[Phys. Rev. B 80, 205316] Published Wed Nov 18, 2009</description>
    <dc:creator>S. M. Shubeita, R. C. Fadanelli, J. F. Dias, P. L. Grande, C. D. Denton, I. Abril, R. Garcia-Molina, and N. R. Arista</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205316</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205316</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-18T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205316</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201311" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Phonon-assisted transitions from quantum dot excitons to cavity photons</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201311</link>
    <description>Author(s): Ulrich Hohenester, Arne Laucht, Michael Kaniber, Norman Hauke, Andre Neumann, Abbas Mohtashami, Marek Seliger, Max Bichler, and Jonathan J. Finley&lt;br/&gt;For a single semiconductor quantum dot embedded in a microcavity, we theoretically and experimentally investigate phonon-assisted transitions between excitons and the cavity mode. Within the framework of the independent boson model we find that such transitions can be very efficient, even for relati...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201311] Published Wed Nov 18, 2009</description>
    <dc:creator>Ulrich Hohenester, Arne Laucht, Michael Kaniber, Norman Hauke, Andre Neumann, Abbas Mohtashami, Marek Seliger, Max Bichler, and Jonathan J. Finley</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201311</dc:identifier>
    <dc:source>Phys. Rev. B 80, 201311</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-18T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>201311</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195317" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Coherent transport in semiconductor heterostructures: A phenomenological approach</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195317</link>
    <description>Author(s): Ariel Gordon and Daniel Majer&lt;br/&gt;We propose a theoretical method for describing coherent quantum transport in semiconductor heterostructures and particularly in quantum cascade lasers (QCLs). The method is an extension of standard rate-equation models to include coherence. Instead of building the model from microscopic consideratio...&lt;br/&gt;[Phys. Rev. B 80, 195317] Published Wed Nov 18, 2009</description>
    <dc:creator>Ariel Gordon and Daniel Majer</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195317</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195317</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-18T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195317</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195316" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195316</link>
    <description>Author(s): A. Raymond, I. Bisotto, Y. M. Meziani, S. Bonifacie, C. Chaubet, A. Cavanna, and J. C. Harmand&lt;br/&gt;We have investigated experimentally and theoretically the effect of repulsive and attractive ionized impurities on the resistivity components ( &#961;_{xx} and &#961;_{xy} ) in the quantum Hall effect regime. GaAs/GaAlAs asymmetric modulation-doped quantum wells with additional delta doping (by Si donor ato...&lt;br/&gt;[Phys. Rev. B 80, 195316] Published Wed Nov 18, 2009</description>
    <dc:creator>A. Raymond, I. Bisotto, Y. M. Meziani, S. Bonifacie, C. Chaubet, A. Cavanna, and J. C. Harmand</dc:creator>
    <dc:date>2009-11-18T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195316</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195316</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
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    <prism:publicationDate>2009-11-18T00:00:00-05:00</prism:publicationDate>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205315" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Bilayer quantum Hall system at  &#957;_{t} =1 : Pseudospin models and in-plane magnetic field</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205315</link>
    <description>Author(s): O. Tieleman, A. Lazarides, D. Makogon, and C. Morais Smith&lt;br/&gt;We investigate two theoretical pseudomagnon-based models for a bilayer quantum Hall system (BQHS) at total filling factor &#957;_{t} =1 . We find a unifying framework which elucidates the different approximations that are made. We also consider the effect of an in-plane magnetic field in BQHSs at &#957;_{t}...&lt;br/&gt;[Phys. Rev. B 80, 205315] Published Tue Nov 17, 2009</description>
    <dc:creator>O. Tieleman, A. Lazarides, D. Makogon, and C. Morais Smith</dc:creator>
    <dc:date>2009-11-17T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205315</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205315</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-17T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205315</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195315" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Phonon-induced dephasing of singlet-triplet superpositions in double quantum dots without spin-orbit coupling</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195315</link>
    <description>Author(s): K. Roszak and P. Machnikowski&lt;br/&gt;We show that singlet-triplet superpositions of two-electron spin states in a double quantum dot undergo a phonon-induced pure dephasing which relies only on the tunnel coupling between the dots and on the Pauli-exclusion principle. As such, this dephasing process is independent of spin-orbit couplin...&lt;br/&gt;[Phys. Rev. B 80, 195315] Published Tue Nov 17, 2009</description>
    <dc:creator>K. Roszak and P. Machnikowski</dc:creator>
    <dc:date>2009-11-17T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195315</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195315</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
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    <prism:publicationDate>2009-11-17T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195315</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195314" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Defect-induced optical absorption in the visible range in ZnO nanowires</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195314</link>
    <description>Author(s): R. Michael Sheetz, Inna Ponomareva, Ernst Richter, Antonis N. Andriotis, and Madhu Menon&lt;br/&gt;The optical properties of ZnO nanowires containing defects are investigated using first-principles density-functional theory incorporating the LDA+U formalism. Calculations include defects in the form of substitutional N, Zn, and O vacancies as well as +1 charged O vacancy. Our calculations reveal t...&lt;br/&gt;[Phys. Rev. B 80, 195314] Published Tue Nov 17, 2009</description>
    <dc:creator>R. Michael Sheetz, Inna Ponomareva, Ernst Richter, Antonis N. Andriotis, and Madhu Menon</dc:creator>
    <dc:date>2009-11-17T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195314</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195314</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-17T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195314</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201310" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Charge ratchet from spin flip: Space-time symmetry paradox</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201310</link>
    <description>Author(s): Sergey Smirnov, Dario Bercioux, Milena Grifoni, and Klaus Richter&lt;br/&gt;Traditionally the charge ratchet effect is considered as a consequence of either the spatial symmetry breaking engineered by asymmetric periodic potentials, or time asymmetry of the driving fields. Here we demonstrate that electrically and magnetically driven quantum dissipative systems with spin-or...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201310] Published Mon Nov 16, 2009</description>
    <dc:creator>Sergey Smirnov, Dario Bercioux, Milena Grifoni, and Klaus Richter</dc:creator>
    <dc:date>2009-11-16T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201310</dc:identifier>
    <dc:source>Phys. Rev. B 80, 201310</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-16T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>201310</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201309" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Spin injection across the Fe/GaAs interface: Role of interfacial ordering</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201309</link>
    <description>Author(s): B. D. Schultz, N. Marom, D. Naveh, X. Lou, C. Adelmann, J. Strand, P. A. Crowell, L. Kronik, and C. J. Palmstr&#248;m&lt;br/&gt;Spin injection efficiency is shown to strongly depend on the interfacial structure between Fe contacts and Al_{x} Ga_{1&#8722;x} As in spin-based light emitting diodes. Both the magnitude and sign of the injected carriers are dependent on the atomic structure of the contacts and can be controlled throug...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201309] Published Mon Nov 16, 2009</description>
    <dc:creator>B. D. Schultz, N. Marom, D. Naveh, X. Lou, C. Adelmann, J. Strand, P. A. Crowell, L. Kronik, and C. J. Palmstr&#248;m</dc:creator>
    <dc:date>2009-11-16T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201309</dc:identifier>
    <dc:source>Phys. Rev. B 80, 201309</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-16T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>201309</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201308" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Exciton polaritons in two-dimensional photonic crystals</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201308</link>
    <description>Author(s): D. Bajoni, D. Gerace, M. Galli, J. Bloch, R. Braive, I. Sagnes, A. Miard, A. Lema&#238;tre, M. Patrini, and L. C. Andreani&lt;br/&gt;Experimental evidence of strong coupling between excitons confined in a quantum well and the photonic modes of a two-dimensional dielectric lattice is reported. Both resonant scattering and photoluminescence spectra at low temperature show the anticrossing of the polariton branches, fingerprint of s...&lt;br/&gt;&lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201308] Published Mon Nov 16, 2009</description>
    <dc:creator>D. Bajoni, D. Gerace, M. Galli, J. Bloch, R. Braive, I. Sagnes, A. Miard, A. Lema&#238;tre, M. Patrini, and L. C. Andreani</dc:creator>
    <dc:date>2009-11-16T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201308</dc:identifier>
    <dc:source>Phys. Rev. B 80, 201308</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-16T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>201308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205314" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Nonlinear transport theory for negative-differential resistance states of two-dimensional electron systems in strong magnetic fields</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205314</link>
    <description>Author(s): A. Kunold and M. Torres&lt;br/&gt;We present a model to describe the nonlinear response to a direct dc current applied to a two-dimensional electron system in a strong magnetic field. The model is based on the solution of the von Neumann equation incorporating the exact dynamics of two-dimensional damped electrons in the presence of...&lt;br/&gt;[Phys. Rev. B 80, 205314] Published Fri Nov 13, 2009</description>
    <dc:creator>A. Kunold and M. Torres</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205314</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205314</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
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    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205314</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205313" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Biexciton oscillator strength</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205313</link>
    <description>Author(s): M. Combescot and O. Betbeder-Matibet&lt;br/&gt;Our goal is to provide a physical understanding of the elementary coupling between photon and biexciton and to derive the physical characteristics of the biexciton oscillator strength, following the procedure we used for trion. Instead of the more standard two-photon absorption, this work concentrat...&lt;br/&gt;[Phys. Rev. B 80, 205313] Published Fri Nov 13, 2009</description>
    <dc:creator>M. Combescot and O. Betbeder-Matibet</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205313</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205313</dc:source>
    <dc:format>text/html</dc:format>
    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
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    <prism:issueIdentifier>20</prism:issueIdentifier>
    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205313</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.201307" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Magnetoresistance in an asymmetric  Ga_{1&#8722;x} Mn_{x} As  resonant tunneling diode</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.201307</link>
    <description>Author(s): Edward Likovich, Kasey Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth&lt;br/&gt;In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shif...&lt;br/&gt;&lt;img src="http://prb.aps.org/files/SuggestionPRB30x30.jpg" alt="PRB Editors' Suggestion"/&gt;&lt;br/&gt; &lt;img src="http://prola.aps.org/graphics/rapid30x30.gif" width="30" height="30" alt="Rapid Communication"/&gt;&lt;br/&gt;[Phys. Rev. B 80, 201307] Published Fri Nov 13, 2009</description>
    <dc:creator>Edward Likovich, Kasey Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.201307</dc:identifier>
    <dc:source>Phys. Rev. B 80, 201307</dc:source>
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    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>20</prism:issueIdentifier>
    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>201307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195313" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Exciton correlations in coupled quantum wells and their luminescence blue shift</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195313</link>
    <description>Author(s): B. Laikhtman and R. Rapaport&lt;br/&gt;In this paper we present a study of an exciton system where electrons and holes are confined in double quantum well structures. The dominating interaction between excitons in such systems is a dipole-dipole repulsion. We show that the tail of this interaction leads to a strong correlation between ex...&lt;br/&gt;[Phys. Rev. B 80, 195313] Published Fri Nov 13, 2009</description>
    <dc:creator>B. Laikhtman and R. Rapaport</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195313</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195313</dc:source>
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    <dc:type>article</dc:type>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
    <prism:issueIdentifier>19</prism:issueIdentifier>
    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>195313</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195312" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Radiative lifetimes in undoped and  p -doped InAs/GaAs quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195312</link>
    <description>Author(s): Edmund Harbord, Peter Spencer, Edmund Clarke, and Ray Murray&lt;br/&gt;We investigate the effect of p doping on the luminescence properties of InAs/GaAs self-assembled quantum dots (QDs). Continuous-wave and time-resolved photoluminescence measurements are obtained as a function of temperature and used to extract the radiative lifetime of the QD ground state. We find t...&lt;br/&gt;[Phys. Rev. B 80, 195312] Published Fri Nov 13, 2009</description>
    <dc:creator>Edmund Harbord, Peter Spencer, Edmund Clarke, and Ray Murray</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195312</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195312</dc:source>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195311" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Electronic reconstruction at a buried ionic-covalent interface driven by surface reactions</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195311</link>
    <description>Author(s): C.-T. Lou (&#32645;&#20013;&#24311;), H.-D. Li (&#26446;&#23439;&#36947;), J.-Y. Chung (&#37912;&#20161;&#38525;), D.-S. Lin (&#26519;&#30331;&#26494;), and T.-C. Chiang (&#27743;&#21488;&#31456;)&lt;br/&gt;Lattice-matched ionic NaCl films were grown layer by layer on covalent Ge(100) using cycles of two half reactions (HRs) that involved the alternative adsorption of Cl and Na. The Ge&#8201;3d photoemission spectra obtained after full cycles of growth resembled that of clean Ge(100), but came to resemble ...&lt;br/&gt;[Phys. Rev. B 80, 195311] Published Fri Nov 13, 2009</description>
    <dc:creator>C.-T. Lou (&#32645;&#20013;&#24311;), H.-D. Li (&#26446;&#23439;&#36947;), J.-Y. Chung (&#37912;&#20161;&#38525;), D.-S. Lin (&#26519;&#30331;&#26494;), and T.-C. Chiang (&#27743;&#21488;&#31456;)</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195311</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195311</dc:source>
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    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
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  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.195310" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>M&#246;bius graphene strip as a topological insulator</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.195310</link>
    <description>Author(s): Z. L. Guo, Z. R. Gong, H. Dong, and C. P. Sun&lt;br/&gt;We study the electronic properties of the M&#246;bius graphene strip with a zigzag edge. We show that such a graphene strip behaves as a topological insulator with a gapped bulk and a robust metallic surface, which enjoys some features due to its nontrivial topology of the spatial configuration such as ...&lt;br/&gt;[Phys. Rev. B 80, 195310] Published Fri Nov 13, 2009</description>
    <dc:creator>Z. L. Guo, Z. R. Gong, H. Dong, and C. P. Sun</dc:creator>
    <dc:date>2009-11-13T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.195310</dc:identifier>
    <dc:source>Phys. Rev. B 80, 195310</dc:source>
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    <prism:publicationDate>2009-11-13T00:00:00-05:00</prism:publicationDate>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205312" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Temperature dependence of the spectral band shape of CdSe nanodots and nanorods</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205312</link>
    <description>Author(s): J. I. Climente, J. Planelles, and F. Rajadell&lt;br/&gt;We study theoretically the effect of thermal population on the emission spectrum of single CdSe nanocrystals. Quantum confinement leads to nonsimple emission band shapes, which have different characteristics for excitons, biexcitons, positive, and negative trions. These effects are particularly pron...&lt;br/&gt;[Phys. Rev. B 80, 205312] Published Thu Nov 12, 2009</description>
    <dc:creator>J. I. Climente, J. Planelles, and F. Rajadell</dc:creator>
    <dc:date>2009-11-12T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205312</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205312</dc:source>
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    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-12T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205312</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205311" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Internal electronic structure and fine structure of multiexcitons in semiconductor quantum dots</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205311</link>
    <description>Author(s): Vladan Mlinar and Alex Zunger&lt;br/&gt;We perform a detailed theoretical study of the characteristic internal electronic structure of various multiexcitons (N_{h} ,N_{e} ) , where N_{h} is number of holes and N_{e} is the number of electrons in the self-assembled semiconductor quantum dots (QDs). For each of the leading (N_{h} ,N_{e} ) e...&lt;br/&gt;[Phys. Rev. B 80, 205311] Published Thu Nov 12, 2009</description>
    <dc:creator>Vladan Mlinar and Alex Zunger</dc:creator>
    <dc:date>2009-11-12T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205311</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205311</dc:source>
    <dc:format>text/html</dc:format>
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    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>80</prism:volume>
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    <prism:publicationDate>2009-11-12T00:00:00-05:00</prism:publicationDate>
    <prism:startingPage>205311</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="http://link.aps.org/doi/10.1103/PhysRevB.80.205310" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:prism="http://prismstandard.org/namespaces/1.2/basic/" xmlns:dc="http://purl.org/dc/elements/1.1/">
    <title>Quantum criticality near the Stoner transition in a system of two tunnel-coupled quantum dots with spin-orbit coupling</title>
    <link>http://link.aps.org/doi/10.1103/PhysRevB.80.205310</link>
    <description>Author(s): Oleksandr Zelyak and Ganpathy Murthy&lt;br/&gt;We study a system of two tunnel-coupled quantum dots with the first dot containing interacting electrons (described by the universal Hamiltonian) not subject to spin-orbit coupling whereas the second contains noninteracting electrons subject to spin-orbit coupling. We focus on describing the behavio...&lt;br/&gt;[Phys. Rev. B 80, 205310] Published Thu Nov 12, 2009</description>
    <dc:creator>Oleksandr Zelyak and Ganpathy Murthy</dc:creator>
    <dc:date>2009-11-12T00:00:00-05:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:identifier>10.1103/PhysRevB.80.205310</dc:identifier>
    <dc:source>Phys. Rev. B 80, 205310</dc:source>
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    <prism:publicationDate>2009-11-12T00:00:00-05:00</prism:publicationDate>
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    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
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